BSM 200 GA 170 DN2 IGBT Power Module Preliminary data * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 6.8 Ohm Type VCE BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S IC Package Ordering Code 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67 1700V 290A SSW SENSE 1 C67070-A2707-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 290 TC = 80 C 200 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 580 TC = 80 C 400 Ptot Power dissipation per IGBT TC = 25 C W 1750 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.07 Diode thermal resistance, chip case RthJCD 0.21 Insulation test voltage, t = 1min. Vis Creepage distance + 150 C -55 ... + 150 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Jul-31-1996 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 16 mA V 4.8 5.5 6.2 VGE = 15 V, IC = 200 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 200 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1700 V, VGE = 0 V, Tj = 25 C - 1.6 2 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 6.4 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 200 A Input capacitance 72 nF - 32 - - 2.5 - - 1 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-31-1996 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Rise time - 530 1000 - 200 400 - 1250 1800 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage VF V IF = 200 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 200 A, VGE = 0 V, Tj = 125 C - 2.1 - Reverse recovery time trr s IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s, Tj = 125 C Reverse recovery charge - 0.8 - Qrr C IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s Tj = 25 C - 14 - Tj = 125 C - 50 - Semiconductor Group 3 Jul-31-1996 BSM 200 GA 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1800 tp = 1.4s W Ptot A IC 1400 10 s 10 2 1200 100 s 1000 800 1 ms 10 1 600 400 10 ms 200 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 3 DC 10 2 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 320 K/W A IC V VCE ZthJC 240 10 -1 200 10 -2 160 D = 0.50 0.20 120 0.10 0.05 10 -3 80 0.02 single pulse 0.01 40 0 0 20 40 60 80 100 120 C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-31-1996 BSM 200 GA 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 400 A IC 300 400 A 17V 15V 13V 11V 9V 7V IC 300 250 250 200 200 150 150 100 100 50 50 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 0 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-31-1996 BSM 200 GA 170 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 800 V 14 1200 V 10 1 12 10 Coss 8 10 0 6 Crss 4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 -1 0 2.8 C 3.4 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 250 500 Semiconductor Group 750 1000 1250 1500 V 2000 VCE 6 0 250 500 750 1000 1250 1500 V 2000 VCE Jul-31-1996 BSM 200 GA 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8 par.: VCE = 1200 V, VGE = 15 V, IC = 200 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr 10 2 10 1 0 tr 10 2 tf 100 200 300 A 10 1 0 500 tf 5 10 15 20 25 30 IC 40 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8 par.: VCE = 1200 V, VGE = 15 V, IC = 200 A 600 600 mWs mWs E E 400 400 Eon 300 300 200 200 Eon Eoff 100 0 0 100 100 200 300 A 500 IC Semiconductor Group 0 0 Eoff 5 10 15 20 25 30 40 RG 7 Jul-31-1996 BSM 200 GA 170 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 400 K/W A IF Tj=125C Tj=25C ZthJC 300 250 10 -1 10 -2 200 D = 0.50 10 -3 0.20 150 0.10 0.05 single pulse 100 10 0.02 -4 0.01 50 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 V VF 3.5 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Jul-31-1996 BSM 200 GA 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Jul-31-1996