SIEMENS PNP Silicon AF Transistors @ For AF driver and output stages @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BCP 54 ... BCP 56 (NPN) 1 YPSC5163 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 4 BCP 51 BCP 51 Q62702-C2107 B C | E | | SOT-223 BCP 51-10 BCP 51-10 | Q62702-C2109 BCP 51-16 BCP 51-16 | Q62702-C2110 BCP 52 BCP 52 Q62702-C2146 BCP 52-10 BCP 52-10 | Q62702-C2112 BCP 52-16 BCP 52-16 | Q62702-C2113 BCP 53 BCP 53 Q62702-C2147 BCP 53-10 BCP 53-10 | Q62702-C2115 BCP 53-16 BCP 53-16 | Q62702-C2116 1) For detailed information see chapter Package Outlines. Semiconductor Group 535 5.91 SIEMENS BCP 51 .. BCP 53 Maximum Ratings Parameter Symbol Vaiues BCP 51 |BCP 52 | BCP 53 | Unit Collector-emitter voltage Vceo 45 60 80 Vv Ree <1 kQ Veer 45 60 100 Collector-base voltage Vepo 45 60 100 Emitter-base voltage Veeo 5 Collector current Ic 1 A Peak collector current Tom 1.5 Base current Ie 100 mA Peak base current Jem 200 Total power dissipation, Ts = 124 C?) Prot 1.5 WwW Junction temperature Tj 150 Cc Storage temperature range Tetg ~ 65 ... + 150 Thermal Resistance Junction - ambient) Risa <72 KAW Junction - soldering point Rinss <17 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mnv/6 cm? Cu. Semiconductor Group 536 SIEMENS BCP 51 . BCP 53 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. | max. DC characteristics Collector-emitter breakdown voltage Vipryceo Vv Ie =10 mA, le=0 BCP 51 45 - - BCP 52 60 - - BCP 53 80 - - Collector-base breakdown voltage Vipryceo Ic = 100 pA, In = 0 BCP 51 45 - _- BCP 52 60 - - BCP 53 100 |- - Emitter-base breakdown voltage Verjepo | 5 _ ~ Te = 10 pA, Ic = 0 Collector-base cutoff current Tcpo Vea = 30 V, /e =0 - - 100 nA Vea = 30 V, Je = 0, Ta = 150C ~ - 20 pA Emitter-base cutoff current Teeo - - 10 pA Ves =5V, Ic=0 DC current gain) re - Ice=5 mA, Vee=2V 25 - - Ic = 150 mA, Vce=2V BCP 51/BCP 52/BCP 53 40 - 250 BCP 51/BCP 52/BCP 53-10 63 100 160 BCP 51/BCP 52/BCP 53-16 100 160 250 Ic = 500 mA, Vce = 2 V 25 - - Collector-emitter saturation voltage) Veeeat ~ ~ 0.5 Vv Ic = 500 mA, Is = 50 mA Base-emitter voltage) Vee - - 1 Ic = 500 mA, Vce = 2 V AC characteristics Transition frequency f - 125 |- MHz Ic = 50 mA, Vee = 10 V, f = 100 MHz 1) Pulse test conditions: rs 300 us, D = 2%. Semiconductor Group 537 SIEMENS BCP 51 .. BCP 53 Total power dissipation Prot = f (Ta"; Ts) Transition frequency ft = f (/c) * Package mounted on epoxy Vce = 10V 1.6 gcP 51...55 EHP00259 103 BCP $1...53 EHP00260 MHz . f tot i 5 1.2 | 1.0 0.8 10? 0.6 5 0.4 0.2 0 10" 0 50 100 C 150 10 10" 102 ma 103 oe Fe 7 A DC current gain hre = f (fc) Vee =2V EHPOO261 5 BCP 51.53 10 10 o i 2 3 4 10 10 107 10 ma 10 + I, Semiconductor Group > be Collector cutoff current Icso = f (Ta) Vee = 30 V GCP 51...53 EHP00262 10+ nA f ceo 105 10? to 10 0 50 100 C: (150 . 7, 538 SIEMENS Base-emitter saturation voltage BCP 51 ... BCP 53 Collector-emitter saturation voltage Ic = f (Vacca) = f (Vecse) hre = 10 hee = 10 104 BCP 51...53 EHPO0263 10! BCP 51...53 EHPOO264 I, mA Ig mA 105 103 5 10? 102 5 10! 10! 5 10 10 0 O02 04 06 08 V1.2 0 0.2 0.4 0.6 V 0.8 > Verret Permissible puise load Pict mex/Pra pe = f (te) ace 51...53 EHPOOZ6S Teo LT Le on TC I i f | | 5 Pros max Prot oc mai a al 10 4 uM ii, Thi CT il 0 107 10% to 1075 107? 5 a fo Semiconductor Group 39 ~ Veesat