CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2003.05.30
Revised Date :
Page No. : 2/4
CMBD2004/A/C/SN3 CYStek Product Specification
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150 °C
Junction Temperature Tj ............................................................................................................. +150 °C
• Maximum Power Dissipation
Total Power Dissipation Ptot (Note)........................................................................................... 350 mW
• Maximum Voltages and Currents
Repetitive Peak Reverse Voltage VRRM ............................................................................................ 300 V
DC Blocking Voltage VR………………………………………………………………………….. 240V
RMS Reverse Voltage VR(RMS)…………………………………………………………………….. 170V
Continuous Forward Current IF (Note)…………………………………………………………… 225 mA
Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA.
Surge Non-repetitive Forward Current IFSM @ tp=1µs........................................................................ 4A
@ tp=1s…….…………………………………………. 1A
• Thermal Resistance, Junction to Ambient Air RθJA……………………………………….……357℃/W
Note : Parts mounted on FR-4 board. For double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic Symbol Condition Min. Max. Unit
Reverse Breakdown Voltage VBR I
R=100µA 300 - V
VF(1) IF=20mA - 870 mV
Forward Voltage (Note) VF(2) IF=100mA - 1000 mV
IR(1) VR=240V,Tj=25℃ - 100 nA
Reverse Leakage Current (Note) IR(2) VR=240V,Tj=150℃ 100 µA
Diode Capacitance CD V
R=0V, f=1MHz - 5 pF
Reverse Recovery Time trr IF=IR=30mA RL=100Ω
measured at IR=3mA - 50 ns
Notes: Pulse test, tp=380µs, duty cycle<2%.