BAS86
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Rev. 2.0, 02-Jun-17 1Document Number: 85511
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
• The low forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications
• This diode is also available in a DO-35 case with type
designation BAT86
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS
BAS86 BAS86-GS18 or BAS86-GS08 Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reserve voltage VR50 V
Forward continuous current (1) IF200 mA
Repetitive peak forward current (1) tp < 1 s, 0.5 IFRM 500 mA
Power dissipation (1) Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 300 K/W
Junction temperature Tj125 °C
Ambient operating temperature range Tamb -65 to +125 °C
Storage temperature range Tstg -65 to +150 °C
BAS86
www.vishay.com Vishay Semiconductors
Rev. 2.0, 02-Jun-17 2Document Number: 85511
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage IR = 10 μA (pulsed) V(BR) 50 V
Leakage current VR = 40 V IR5μA
Forward voltage
Pulse test tp < 300 μs,
IF = 0.1 mA, < 2 % VF200 300 mV
Pulse test tp < 300 μs,
IF = 1 mA, < 2 % VF275 380 mV
Pulse test tp < 300 μs,
IF = 10 mA, < 2 % VF365 450 mV
Pulse test tp < 300 μs,
IF = 30 mA, < 2 % VF460 600 mV
Pulse test tp < 300 μs,
IF = 100 mA, < 2 % VF700 900 mV
Diode capacitance VR = 1 V, f = 1 MHz CD8pF
Reserve recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA trr 5ns
15827
0
50
100
150
200
250
300
350
400
450
500
25 50 75 100 125 150
Tj- Junction Temperature (°C)
P - Reverse Power Dissipation (mW)
R
- Limit
at 100 % V
PR
R
- Limit
at 80 % V
PR
R
RthJA = 540 K/W
VR= 50 V
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
V
R
=V
RRM
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I- Forward Current (A)
F
VF- Forward Voltage (V)
Tj= 25 °C
Tj= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
VR- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
BAS86
www.vishay.com Vishay Semiconductors
Rev. 2.0, 02-Jun-17 3Document Number: 85511
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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