BAS86 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES * For general purpose applications * This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring DESIGN SUPPORT TOOLS click logo to get started Models Available * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications * This diode is also available in a DO-35 case with type designation BAT86 MECHANICAL DATA Case: MiniMELF (SOD-80) * AEC-Q101 qualified Weight: approx. 31 mg * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box APPLICATIONS GS08/2.5K per 7" reel (8 mm tape), 12.5K/box * Applications where a very low forward voltage is required PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS86 BAS86-GS18 or BAS86-GS08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reserve voltage VR 50 V Forward continuous current (1) IF 200 mA IFRM 500 mA Ptot 200 mW Repetitive peak forward current (1) tp < 1 s, 0.5 Power dissipation (1) Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 C Ambient operating temperature range Tamb -65 to +125 C Storage temperature range Tstg -65 to +150 C Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.0, 02-Jun-17 Document Number: 85511 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reserve breakdown voltage IR = 10 A (pulsed) V(BR) 50 Leakage current Forward voltage VR = 40 V IR Pulse test tp < 300 s, IF = 0.1 mA, < 2 % VF Pulse test tp < 300 s, IF = 1 mA, < 2 % MAX. UNIT V 5 A 200 300 mV VF 275 380 mV Pulse test tp < 300 s, IF = 10 mA, < 2 % VF 365 450 mV Pulse test tp < 300 s, IF = 30 mA, < 2 % VF 460 600 mV Pulse test tp < 300 s, IF = 100 mA, < 2 % VF 700 900 mV VR = 1 V, f = 1 MHz CD 8 pF IF = 10 mA, IR = 10 mA, iR = 1 mA trr 5 ns Diode capacitance Reserve recovery time TYP. 1000 500 Tj = 125 C VR = 50 V 450 400 350 300 250 PR - Limit at 100 % VR 200 150 100 PR - Limit at 80 % VR R thJA = 540 K/W IF - Forward Current (A) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 Tj = 25 C 10 1 50 0 25 0.1 50 75 100 125 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 9 C D - Diode Capacitance (pF) I R - Reverse Current (A) 1.5 10 V R = V RRM 1000 100 15828 1.0 Fig. 3 - Forward Current vs. Forward Voltage 10000 10 1 25 0.5 V F - Forward Voltage (V) 15829 Tj - Junction Temperature (C) 15827 0 150 7 6 5 4 3 2 1 0 50 75 100 125 150 Tj - Junction Temperature (C) Fig. 2 - Reverse Current vs. Junction Temperature 15830 f = 1 MHz 8 0.1 1 10 100 V R - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.0, 02-Jun-17 Document Number: 85511 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 5 (0.197) ref. 96 12070 Rev. 2.0, 02-Jun-17 Document Number: 85511 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: BAS86-GS08 BAS86-GS18