tm
October 2006
FDD4685 40V P-Channel PowerTrench® MOSFET
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
www.fairchildsemi.com
1
FDD4685
40V P-Channel PowerTrench® MOSFET
–40V, –32A, 27mΩ
Features
Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A
Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
superior performance in application.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage –40 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous(Package Limited) TC= 25°C –32
A
-Continuous(Silicon Limited) TC= 25°C (Note 1) –40
-Continuous TA= 25°C (Note 1a) –8.4
-Pulsed –100
EAS Drain-Source Avalanche Energy (Note 3) 121 mJ
PD
Power Dissipation TC= 25°C 69 W
Power Dissipation (Note 1a) 3
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
RθJC Thermal Resistance, Junction to Case 1.8 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD4685 FDD4685 D-PAK(TO-252) 13’’ 12mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
S
G
D
FDD4685 40V P-Channel PowerTrench® MOSFET
FDD4685 Rev.B www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V –40 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = –250µA, referenced to 25°C –33 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –32V, VGS = 0V –1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA–1 –1.6 –3 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = –250µA, referenced to 25°C 4.9 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = –10V, ID = –8.4A 23 27
mΩVGS = –4.5V, ID = –7A 30 35
VGS = –10V, ID = –8.4A, TJ=125°C 33 42
gFS Forward Transconductance VDS = –5V, ID = –8.4A 23 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = –20V, VGS = 0V,
f = 1MHz
1790 2380 pF
Coss Output Capacitance 260 345 pF
Crss Reverse Transfer Capacitance 140 205 pF
RgGate Resistance f = 1MHz 4Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = –20V, ID = –8.4A
VGS = –10V, RGEN = 6Ω
8 16 ns
trRise Time 15 27 ns
td(off) Turn-Off Delay Time 34 55 ns
tfFall Time 14 26 ns
Qg(TOT) Total Gate Charge VDD =–20V, ID = –8.4A
VGS = –5V
19 27 nC
Qgs Gate to Source Gate Charge 5.6 nC
Qgd Gate to Drain “Miller” Charge 6.1 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –8.4A (Note 2) –0.85 –1.2 V
trr Reverse Recovery Time IF = –8.4A, di/dt = 100A/µs 30 45 ns
Qrr Reverse Recovery Charge 31 47 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
FDD4685 40V P-Channel PowerTrench® MOSFET
FDD4685 Rev.B www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
01234
0
20
40
60
80
100
VGS = -4V
VGS = -6V
VGS = -4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3V
VGS = -10V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
020406080100
0.6
1.0
1.4
1.8
2.2
2.6
3.0
VGS = -4.5V
VGS = -6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = -4V
VGS = -3V
VGS = -10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID =-8.4A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
2345678910
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = -8.4A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
123456
0
20
40
60
80
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.4 0.6 0.8 1.0 1.2
0.1
1
10
40
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDD4685 40V P-Channel PowerTrench® MOSFET
FDD4685 Rev.B www.fairchildsemi.com
4
Figure 7.
0 10203040
0
2
4
6
8
10
VDD = -30V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -20V
Gate Charge Characteristics Figure 8.
0.1 1 10
101
102
103
104
50
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
2
3
4
5
6
7
8
9
10
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
10
20
30
40
50
Limited by Package
RθJC = 1.8oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. F o r w a rd Bi a s S afe
Operating Area
110100
0.1
1
10
100
DC
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
200
Figure 12.
10-3 10-2 10-1 100101
50
100
150
200
250
300
VGS = -10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
c
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 Tc
–
125
-----------------------
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDD4685 40V P-Channel PowerTrench® MOSFET
FDD4685 Rev.B www.fairchildsemi.com
5
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
Typical Characteristics TJ = 25°C unless otherwise noted
FDD4685 Rev. B www.fairchildsemi.com6
FDD4685 40V P-Channel PowerTrench® MOSFET
Rev. I20
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intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
