4
NPN Multi-Chip General Purpose Amplifier
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collec t or-Emitter V ol tage 40 V
VCBO Collec t or-Bas e Voltage 75 V
VEBO Emi tter-Base Volt age 5.0 V
ICCollect or Current - Cont i nuous 500 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FFB2222A FMB2222A MMPQ2222A
PDTotal Device Dissipation
Derate above 25°C300
2.4 700
5.6 1,000
8.0 mW
mW/°C
RθJA Thermal Res i stance, J unction to Ambient
Effective 4 Die
Each Die
415 180 125
240
°C/W
°C/W
°C/W
FFB2222A FMB2222A
SuperSOT-6
Mark: .1P
Dot denotes pin #1
C1
E1 C2
B1 E2 B2
pin #1
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
MMPQ2222A
SOIC-16
Mark:
MMPQ2222A C1C1C2C2C3C3C4C4
E1 B1E2B2E3 B3E4B4
pin #1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C1
B2 E2
E1 B1 C2
pin #1
SC70-6
Mark: .1P
FFB2222A / FMB2222A / MMPQ2222A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
V(BR)CEO Collector-Emit ter Breakdown
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 60 V, I E = 0 10 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, I C = 0 10 nA
hFE DC Current Gain IC = 0.1 mA , VCE = 10 V
IC = 1.0 mA , VCE = 10 V
IC = 10 mA, V CE = 10 V
IC = 150 mA, V CE = 10 V *
IC = 150 mA, V CE = 1. 0 V *
IC = 500 mA, V CE = 10 V*
35
50
75
100
50
40
300
VCE(sat)Collector-Emitt er Saturation Voltage* IC = 150 mA , IB = 15 mA
IC = 500 mA, IB = 50 mA 0.3
1.0 V
V
VBE(sat)Base-Emitter Saturat i on V oltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 1.2
2.0 V
V
NPN Multi-Chip General Purpose Amplifier
(continued)
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.1 1 V af=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20 mA , VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, I E = 0, f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF
NF Noise Figure IC = 100 µA, VCE = 10 V,
RS = 1.0 k, f = 1.0 kHz 2.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
tdDelay Tim e VCC = 30 V, V BE(OFF) = 0.5 V, 8 ns
trRise Ti me IC = 150 mA, IB1 = 15 mA 20 ns
tsStorage Time VCC = 30 V, IC = 150 m A , 180 ns
tfFall Time IB1 = IB2 = 15 m A 40 ns
FFB2222A / FMB2222A / MMPQ2222A
4
Typical Characteristics
Typical Pulsed Current Gain
vs Collect or Curr ent
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT ( mA)
h - TYPICAL PULSED CUR RE N T G AI N
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Co l lec to r- Emitter Satu r at ion
Volt age vs Coll ec tor Current
1 10 100 500
0.1
0.2
0.3
0.4
I - CO LL ECTO R CU RRENT ( mA)
V - COL LE C TOR-EMI TTER VOLT A GE (V )
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
B a se-Emitter Satu ra tion
Voltage vs Co llector Curren t
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - B ASE-EMITTER VO LTAGE (V)
BESAT
C
β= 10
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cuto ff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIEN T TEM P ERATU R E ( C)
I - CO LL ECTO R CURRE NT (nA)
A
V = 40V
CB
CBO
°
Emitt er Tran siti on and Output
Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
REV ERSE B IAS VOLTA GE (V )
CAP ACITANCE (pF)
f = 1 M H z
Cob
C
te
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
Typical Characteristics (continued)
NPN Multi-Chip General Purpose Amplifier
(continued)
Turn O n and Tur n Off Ti mes
vs Collecto r C urren t
10 100 1000
0
80
160
240
320
400
I - COLLECTO R CURRENT (mA)
TIM E (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
S witching Times
vs Collector Curren t
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 2 5 V
cc
tf
td
FFB2222A / FMB2222A / MMPQ2222A
Power Dissipation vs
Ambi e nt Te mperatu re
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C )
P - P OWE R DIS S IPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
4
Typical Common Emitter Characteristics (f = 1.0kHz)
Commo n Emitte r Charact eri stics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
Comm o n Emit te r Ch ar acte ri st ics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AM BIENT TE MPERATURE ( C)
CHAR. RE LATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 1 0 mA
C
hoe
hre
hfe
hie
o
o
Common Emi tter Characteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLL ECTOR VOLT AGE ( V)
CHAR . RE LAT IVE TO VA LUE S AT V = 1 0 V
CE
CE
T = 25 C
A o
hoe
h re
h fe
hie
I = 10 mA
C
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
Test Circuits
30 V
1.0 K
16 V
0
200ns
200ns
500
200
50
37
- 1.5 V
1.0 K
6.0 V
0
30 V
FIGURE 2: Saturated Turn-Off Switching Time
FIGURE 1: Saturated Turn-On Switching Time
1k
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
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