RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION BAS86
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
SCHOTTKY DIODES
FEATURES
*Fast Switching Device(TRR<4.0nS)
*Mini MELF Glass Case (SOD-80)
*
*
*
*
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads
are readily solderable
Dimensions in inches and (millimeters)
RATINGS
Maximum Forward Comtinuous Current @ TA=25OC
Maximum Forward Comtinuous Reverse Voltage
Surge Forward Current @ tp=10ms
Maximum Power Dissipation @ TA=65OC
Storage Temperature Range
Junction Temperature
SYMBOL BAS86
mAmps
V
200
50
Maximum Peak Forward Current tp<1s mAmps500
5
200
-65 to + 150
125
Amps
mW
OC
OC
UNITS
IF
VR
IFM
IFSM
PD
TSTG
SOD-80
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Reverse voltage leakage current (VR=40V)
Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA)
(IF=1mA)
(IF=0.1mA)
(IF=30mA)
(IF=100mA)
Diode capacitance (VR=1,f=1MHz)
CHARACTERISTICS SYMBOL UNITS
5
0.30
0.45
0.38
0.60
0.90
-
-
-
-
-
8
µA
V
pF
IR
VF
CD
MAX.
-
-
TYP.
-
-
-
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.016(0.40)
∅
∅.059(1.5)
.055(1.4)
.008(0.20)
.142(3.6)
.134(3.4)
TJ
