SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J507NU 1. Applications * Power Management Switches 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5 V) RDS(ON) = 32 m (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment 1.2.5.6 Drain 3. Gate 4. Source UDFN6B Start of commercial production (c)2015 Toshiba Corporation 1 2015-05 2015-11-10 Rev.2.0 SSM6J507NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit V Drain-source voltage VDSS -30 Gate-source voltage VGSS -25 / +20 Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t 10 s) (Note 1) ID -10 (Note 1), (Note 2) IDP -30 A (Note 3) PD 1.25 W (Note 3) PD 2.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Repetitive rating; pulse width limited by maximum channel temperature. Note 3: Device mounted on a FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu pad: 645 mm2) Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be handled with care. The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. (c)2015 Toshiba Corporation 2 2015-11-10 Rev.2.0 SSM6J507NU 5. Electrical Characteristics 5.1. Static Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Gate leakage current Gate threshold voltage (Note 1) Drain-source on-resistance (Note 2) Forward transfer admittance Min Typ. Max Unit 1 A IGSS VGS = 16 V, VDS = 0 V IDSS VDS = -30 V, VGS = 0 V -1 V(BR)DSS ID = -250 A, VGS = 0 V -30 Drain cut-off current Drain-source breakdown voltage Test Condition -1.0 -2.2 RDS(ON) ID = -4.0 A, VGS = -10 V Vth 14 20 ID = -4.0 A, VGS = -4.5 V 19 28 ID = -4.0 A, VGS = -4.0 V 21 32 VDS = -10 V, ID = -2.0 A 14 (Note 2) |Yfs| VDS = VGS, ID = -250 A V m S Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-250 A for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (turn-on time) ton Switching time (turn-off time) toff Test Condition VDS = -15 V, VGS = 0 V, f = 1 MHz VDD = -15 V, ID = -2.0 A VGS = 0 to -4.5 V, RG = 10 , Duty 1%,VIN: tr, tf < 5 ns, Common source, See Chapter 5.3. Min Typ. Max Unit 1150 pF 185 210 55 170 ns 5.3. Switching Time Test Circuit Fig. 5.3.1 Switching Time Test Circuit Fig. 5.3.2 Input Waveform/Output Waveform 5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd (c)2015 Toshiba Corporation Test Condition VDD = -15 V, VGS = -4.5 V, ID = -10 A 3 Min Typ. Max Unit 13.6 20.4 nC 2.6 5.8 2015-11-10 Rev.2.0 SSM6J507NU 5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Diode forward voltage Symbol (Note 1) VDSF Test Condition ID = 4 A, VGS = 0 V Min Typ. Max Unit 0.78 1.0 V Note 1: Pulse measurement. 6. Marking 7. Internal Equivalent Circuit (c)2015 Toshiba Corporation 4 2015-11-10 Rev.2.0 SSM6J507NU 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VGS Fig. 8.3 RDS(ON) - VGS Fig. 8.4 RDS(ON) - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta (c)2015 Toshiba Corporation 5 2015-11-10 Rev.2.0 SSM6J507NU Fig. 8.7 Vth - Ta Fig. 8.8 C - VDS Fig. 8.9 Dynamic Input Characteristics Fig. 8.10 t - ID Fig. 8.11 IDR - VDS Fig. 8.12 Safe Operating Area (c)2015 Toshiba Corporation 6 2015-11-10 Rev.2.0 SSM6J507NU Fig. 8.13 rth - tw Note: Fig. 8.14 PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2015 Toshiba Corporation 7 2015-11-10 Rev.2.0 SSM6J507NU Package Dimensions Unit: mm Weight: 8.5 mg (typ.) Package Name(s) TOSHIBA: 2-2AA1A Nickname: UDFN6B (c)2015 Toshiba Corporation 8 2015-11-10 Rev.2.0 SSM6J507NU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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