GBPC1510W-E4/51 - Vishay [General Semiconductor]

Document Number: 88612 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 28-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Glass Passivated Single-Phase Bridge Rectifier

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

FEATURES

• UL recognition file number E54214

• Universal 3-way terminals: snap-on, wire

wrap-around, or PCB mounting

• Typical IR less than 0.3 μA

• High surge current capability

• Low thermal resistance

• Solder dip 260 °C, 40 s

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for power supply, home appliances, office equipment,

industrial automation applications.

MECHANICAL DATA

Case: GBPC, GBPC-W

Epoxy meets UL 94 V-0 flammability rating

Terminals: Nickel plated on faston lugs or silver plated on

wire leads, solderable per J-STD-002 and JESD22-B102.

E4 suffix for consumer grade. Suffix letter “W” added to

indicate wire leads (e.g. GBPC12005W).

Polarity: As marked, positive lead by belevled corner

Mounting Torque: 20 inches-lbs. max.

PRIMARY CHARACTERISTICS

IF(AV) 12 A, 15 A, 25 A, 35 A

VRRM 50 V to 1000 V

IFSM 200 A, 300 A, 300 A, 400 A

IR5 μA

VF1.1 V

TJ max. 150 °C

GBPCGBPC-W

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GBPC12, 15, 25, 35 UNIT

005 01 02 04 06 08 10

Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V

Maximum average forward rectified

output current (Fig. 1)

GBPC12

IF (AV)

GBPC15 15

GBPC25 25

GBPC35 35

Peak forward surge current single

sine-wave superimposed on rated load

GBPC12

IFSM

200

GBPC15 300

GBPC25 300

GBPC35 400

Rating (non-repetitive, for t greater than

1 ms and less than 8.3 ms) for fusing

GBPC12

I2t

160

A2s

GBPC15 375

GBPC25 375

GBPC35 660

RMS isolation voltage from case to leads VISO 2500 V

Operating junction storage temperature range TJ, TSTG - 55 to + 150 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88612

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

Notes

(1) With heatsink

(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST

CONDITIONS SYMBOL

GBPC12, 15, 25, 35

UNIT

005 01 02 04 06 08 10

Maximum instantaneous

forward drop per diode

GBPC12 IF = 6.0 A

VF1.1 V

GBPC15 IF = 7.5 A

GBPC25 IF = 12.5 A

GBPC35 IF = 17.5 A

Maximum reverse DC current at rated

DC blocking voltage per diode

TA = 25 °C

5.0

μA

TA = 125 °C 500

Typical junction capacitance per diode 4 V, 1 MHz CJ300 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL

GBPC12, 15, 25, 35

UNIT

005 01 02 04 06 08 10

Typical thermal resistance

GBPC12 to GBPC25

RJC (1) 1.9

°C/W

GBPC35 1.4

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

GBPC1206-E4/51 15.79 51 100 Paper box

GBPC1506-E4/51 15.79 51 100 Paper box

GBPC2506-E4/51 15.79 51 100 Paper box

GBPC3506-E4/51 15.79 51 100 Paper box

GBPC1206W-E4/51 13.8 51 100 Paper box

GBPC1506W-E4/51 13.8 51 100 Paper box

GBPC2506W-E4/51 13.8 51 100 Paper box

GBPC3506W-E4/51 13.8 51 100 Paper box

Document Number: 88612 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 28-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Output Rectified Current

Fig. 2 - Maximum Output Rectified Current

Fig. 3 - Maximum Power Dissipation

Fig. 4 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Reverse Leakage Characteristics Per Diode

025 50 75 100 125 150 175 200

Bridges Mounted on

9.5 x 3.5 x 4.6"

(22.9 x 8.9 x 11.7 cm)

AL, Finned Plate

5 x 6 x 4.9"

AL, Finned Plate

5 x 4 x 3"

AL, Finned Plate

6 x 2.2 x 2.2"

AL, Finned Plate

60 Hz

Resistive or

Inductive Load

Case Temperature (°C)

Average Forward Current (A)

0 10 20 30 40 50 60 70 80 90 100

60 Hz

Resistive or

Inductive Load

GBPC35

RthSA = 0.5 °C/W

GBPC15

RthSA = 1.0 °C/W

GBPC12

RthSA = 1.0 °C/W

GBPC25

RthSA = 0.5 °C/W

Ambient Temperature (°C)

Average Forward Current (A)

Average Output Current (A)

Average Power Dissipation of Bridge (W)

010 20 30 40

Capacitive Load

TJ = TJ Max.

Resistive or

Inductive Load

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

110

1000

GBPC35

GBPC15

GBPC25

GBPC12

TJ = TJ Max.

0.5 ms Single Sine-Wave

100

1.0 Cycle

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.4 0.5 0.6 0.7 0.9 1.0 1.1

0.1

100

0.8

TA = 100 °C

TA = 150 °C

TA = 125 °C

TA = 25 °C

020 40 60 80 100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

30 50 70 90

1000

TA = 100 °C

TA = 150 °C

TA = 125 °C

TA = 25 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88612

4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

110 100

100

1000

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

Reverse Voltage (V)

Junction Capacitance (pF)

0.01 0.1 110 100

100

1000

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

t - Heating Time (s)

Transient Thermal Impedance (°C/W)

1.135 (28.8)

1.115 (28.3)

0.732 (18.6)

0.692 (17.6)

0.470 (11.9)

0.430 (10.9)

0.042 (1.07)

0.038 (0.97)

DIA.

0.310 (7.87)

0.290 (7.36)

1.25

(31.8)

MIN.

1.135 (28.8)

1.115 (28.3)

0.732 (18.6)

0.692 (17.6)

Hole for

#10 Screw

0.220 (5.59)

0.200 (5.08) DIA. 0.24 (6.0)

0.18 (4.6)

0.50 (12.7)

0.44 (11.7)

0.24 (6.0)

0.18 (4.6)

GBPC-W GBPC

1.135 (28.8)

1.115 (28.3)

0.672 (17.1)

0.632 (16.1)

0.732 (18.6)

0.692 (17.6)

0.094 (2.4)

DIA.

0.034 (0.86)

0.030 (0.76)

0.25

(6.35)

0.840 (21.3)

0.740 (18.8)

0.582 (14.8)

0.542 (13.8)

0.672 (17.1)

0.632 (16.1)

1.135 (28.8)

1.115 (28.3)

0.310 (7.62)

0.290 (7.36)

0.034 (0.86)

0.030 (0.76)

Hole for

#10 Screw

0.220 (5.59)

0.200 (5.08) DIA.

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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