Document Number: 88612 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
FEATURES
UL recognition file number E54214
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 0.3 μA
High surge current capability
Low thermal resistance
Solder dip 260 °C, 40 s
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.
MECHANICAL DATA
Case: GBPC, GBPC-W
Epoxy meets UL 94 V-0 flammability rating
Terminals: Nickel plated on faston lugs or silver plated on
wire leads, solderable per J-STD-002 and JESD22-B102.
E4 suffix for consumer grade. Suffix letter “W” added to
indicate wire leads (e.g. GBPC12005W).
Polarity: As marked, positive lead by belevled corner
Mounting Torque: 20 inches-lbs. max.
PRIMARY CHARACTERISTICS
IF(AV) 12 A, 15 A, 25 A, 35 A
VRRM 50 V to 1000 V
IFSM 200 A, 300 A, 300 A, 400 A
IR5 μA
VF1.1 V
TJ max. 150 °C
~
~
~
~~
~
GBPCGBPC-W
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBPC12, 15, 25, 35 UNIT
005 01 02 04 06 08 10
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified
output current (Fig. 1)
GBPC12
IF (AV)
12
A
GBPC15 15
GBPC25 25
GBPC35 35
Peak forward surge current single
sine-wave superimposed on rated load
GBPC12
IFSM
200
A
GBPC15 300
GBPC25 300
GBPC35 400
Rating (non-repetitive, for t greater than
1 ms and less than 8.3 ms) for fusing
GBPC12
I2t
160
A2s
GBPC15 375
GBPC25 375
GBPC35 660
RMS isolation voltage from case to leads VISO 2500 V
Operating junction storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88612
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL
GBPC12, 15, 25, 35
UNIT
005 01 02 04 06 08 10
Maximum instantaneous
forward drop per diode
GBPC12 IF = 6.0 A
VF1.1 V
GBPC15 IF = 7.5 A
GBPC25 IF = 12.5 A
GBPC35 IF = 17.5 A
Maximum reverse DC current at rated
DC blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C 500
Typical junction capacitance per diode 4 V, 1 MHz CJ300 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
GBPC12, 15, 25, 35
UNIT
005 01 02 04 06 08 10
Typical thermal resistance
GBPC12 to GBPC25
RJC (1) 1.9
°C/W
GBPC35 1.4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBPC1206-E4/51 15.79 51 100 Paper box
GBPC1506-E4/51 15.79 51 100 Paper box
GBPC2506-E4/51 15.79 51 100 Paper box
GBPC3506-E4/51 15.79 51 100 Paper box
GBPC1206W-E4/51 13.8 51 100 Paper box
GBPC1506W-E4/51 13.8 51 100 Paper box
GBPC2506W-E4/51 13.8 51 100 Paper box
GBPC3506W-E4/51 13.8 51 100 Paper box
Document Number: 88612 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Output Rectified Current
Fig. 2 - Maximum Output Rectified Current
Fig. 3 - Maximum Power Dissipation
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
025 50 75 100 125 150 175 200
0
5
20
15
25
10
30
35
40
Bridges Mounted on
9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate
5 x 6 x 4.9"
AL, Finned Plate
5 x 4 x 3"
AL, Finned Plate
6 x 2.2 x 2.2"
AL, Finned Plate
60 Hz
Resistive or
Inductive Load
Case Temperature (°C)
Average Forward Current (A)
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
30
35
40
60 Hz
Resistive or
Inductive Load
GBPC35
RthSA = 0.5 °C/W
GBPC15
RthSA = 1.0 °C/W
GBPC12
RthSA = 1.0 °C/W
GBPC25
RthSA = 0.5 °C/W
Ambient Temperature (°C)
Average Forward Current (A)
Average Output Current (A)
Average Power Dissipation of Bridge (W)
010 20 30 40
0
10
20
30
40
50
60
70
80
Capacitive Load
TJ = TJ Max.
Resistive or
Inductive Load
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
110
10
1000
GBPC35
GBPC15
GBPC25
GBPC12
TJ = TJ Max.
0.5 ms Single Sine-Wave
100
100
1.0 Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.4 0.5 0.6 0.7 0.9 1.0 1.1
0.1
1
10
100
0.8
TA = 100 °C
TA = 150 °C
TA = 125 °C
TA = 25 °C
020 40 60 80 100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
30 50 70 90
1000
TA = 100 °C
TA = 150 °C
TA = 125 °C
TA = 25 °C
10
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88612
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
110 100
10
100
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
1
10
100
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.470 (11.9)
0.430 (10.9)
0.042 (1.07)
0.038 (0.97)
DIA.
0.310 (7.87)
0.290 (7.36)
1.25
(31.8)
MIN.
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
Hole for
#10 Screw
0.220 (5.59)
0.200 (5.08) DIA. 0.24 (6.0)
0.18 (4.6)
0.50 (12.7)
0.44 (11.7)
0.24 (6.0)
0.18 (4.6)
GBPC-W GBPC
1.135 (28.8)
1.115 (28.3)
0.672 (17.1)
0.632 (16.1)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
0.034 (0.86)
0.030 (0.76)
0.25
(6.35)
AC
0.840 (21.3)
0.740 (18.8)
0.582 (14.8)
0.542 (13.8)
0.672 (17.1)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.034 (0.86)
0.030 (0.76)
Hole for
#10 Screw
0.220 (5.59)
0.200 (5.08) DIA.
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Revision: 12-Mar-12 1Document Number: 91000
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