Complementary Silicon Power
Plastic Transistors
. . . designed for low power audio amplifier and low–current,
high–speed switching applications.
•High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
•High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
= 40–120 — MJE243, MJE253
•Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
•High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
•Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
7.0
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
8.0
ÎÎÎÎÎ
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
10
ÎÎÎÎÎ
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
15
0.12
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Watts
W/ac
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25C
Derate @ 25C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.5
0.012
ÎÎÎÎÎ
ÎÎÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
8.34
ÎÎÎÎÎ
ÎÎÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
θJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
83.4
ÎÎÎÎÎ
ÎÎÎÎÎ
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10 1Publication Order Number:
MJE243/D
MJE243
MJE253
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
*ON Semiconductor Preferred Device
*
NPN
PNP *
CASE 77–09
TO–225AA
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE243 MJE253
http://onsemi.com
2
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
040 60 100 120 160
12
PD, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0 0.4
80 140
TC
PD, POWER DISSIPATION (WATTS)
TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCE = 100 Vdc, IE = 0, TC = 125C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.1
0.1
ÎÎÎ
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
0.1
ÎÎÎ
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
40
15
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
180
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.3
0.6
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.8
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
40
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
50
ÎÎÎ
Î
Î
Î
ÎÎÎ
pF
MJE243 MJE253
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3
Figure 2. Switching Time Test Circuit
+11 V
25 µs
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn–On Time
3
2
5213
tr
NPN MJE243
PNP MJE253
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
θJC(t) = r(t) θJC
θJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
30
0.01
0.05
Figure 5. Active Region Safe Operating Area
500µs
dc
5.0
20107.05.03.02.01.0
100µs
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
0.02
1.0ms
1007050
5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
MJE243/MJE253
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 4. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJE243 MJE253
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4
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn–Off Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 105213
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
10 100
100
200
50
Figure 7. Capacitance
70
5020107.05.03.01.0
C, CAPACITANCE (pF)
2.0
TJ = 25°C
Cib
Cob
MJE243 (NPN)
MJE253 (PNP)
30
NPN MJE243
PNP MJE253
20
7030
MJE243 MJE253
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5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
200
500
0.06 0.1 0.4 4.00.04
100
70
50
20
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
5.0 1.0 2.00.6
25°C
TJ = 150°C
-55°C
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
0.4
0
TJ = 25°C
V, VOLTAGE (VOLTS)
NPN
MJE243 PNP
MJE253
100
200
70
50
30
20
2.0
hFE, DC CURRENT GAIN
25°C
TJ = 150°C
-55°C
VCE = 1.0 V
VCE = 2.0 V
V, VOLTAGE (VOLTS)
VCE(sat)
VBE @ VCE = 1.0 V
θVB FOR VBE
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
IC/IB = 10
VBE @ VCE = 1.0 V
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
VCE = 1.0 V
VCE = 2.0 V
7.0
10
30
300
0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
1.0
0.6
0.2
1.4
1.2
0.8
0.4
1.0
0.6
0.2
3.0
5.0
7.0
10
5.0
IC/IB = 10
VCE(sat)
5.0
VBE(sat) @ IC/IB = 10
*θVC FOR VCE(sat)
θVB FOR VBE
*θVC FOR VCE(sat)
MJE243 MJE253
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6
PACKAGE DIMENSIONS
CASE 77–09
ISSUE W
TO–225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE243 MJE253
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7
Notes
MJE243 MJE253
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8
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