cyggict pepe rman eman ae [SAMSUNG SEMICONDUCTOR INC Lue D ff 2764142 o007308 2 i a wv ee eee wee eee ee MPS2222A ~ .. . NPN_EPITAXIAL SILICON TRANSISTOR: | te T-29-21 GENERAL PURPOSE TRANSISTOR - * Collector-Emitter Voltage: Vezo =40V TO-92 Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symbol Rating Unit Collector-Base Voltage Veao 75 Vv Collector-Emitter Voltage Veeo 40 v Emitter-Base Voltage Veeo 6 v Collector Current Io 600 mA Collector Dissipation Pe 625 mw Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 1, Emitter 2. Base 3. Collector *Refer to MPS2222 for graphs ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbo! Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVcs0 Io=10pA, le =0 75 Vv Collector-Emitter Breakdown Voltage | BVceo lc=10mA, Ip =0 40 Vv Emitter-Base Breakdown Voltage BVeao fe =10pA, Io =0 6 Vv Collector Cut-off Current Iceo Vee =60V, le =0 0.01 pA Emitter Cutoff Current 1 Teso Veo =3V, Io =O 10 -;| nA DC Current Gain Nee t=0.1MA, Vce = 10V 35 Ig=1mA, Vee =10V 50 le=10MA, Vee =10V 75 *le=150mMA, Voce =10V 100 300 *[g =500MA, Vce =10V 40 *Coltector-Emitter Saturation Voltage Vee (sat) Io=150mA, lp =15MA 0.3 Vv Io =500MA, Ip =50MA 1 Vv *Base-Emitter Saturation Voltage Vee (sat) ig =150mA, lp=15mA 0.6 1.2 Vv ic =500mA, Ip =50mMA . 2 Vv Current Gain Bandwidth Product fr Ig =20mA, Vce =20V 300 . | MHz . *. | f=100MHz / Output Capacitance Cob | Vea =10V, te =0, f= 1MHZ 8 pF | Turn On Time ton Veo =30V, lc =150MA . 35 ns lai =15mMA, Vee (off}=0.5V) Turn Off Time toft Veco =30V, fe 150MA 285 ns , lay =lee=15MA . Noise Figure NF Io=100pA, Vce=10V- 4 dB Rs =1KQ, f=1KHz : * Pulse Test: Pulse Width <300xS, Duty Cycle = 2% Also available as a PN2222A ce SAMSUNG SEMICONDUCTOR 678.