Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
POWER MOSFET IRF540
Advance Information
Ordering Inform ation
Device Package Temp.
IRL540T TO-220
0 to 150°C
IRL540S TO-263 ( D2 ) 0 to 150°C
Absolute Maximum Rating
Parameter Max Unit
ID@ TC =25°
°°
°C Continuous Drain Cur rent, V GS @10V 28
ID@ TC =100°
°°
°C Continuous Drain Cur rent, V GS @10V 20
IDM Pulsed Drain Current 110
A
PD @ TC =25°
°°
°C Power Dissipation 150
PD @ TA =25°
°°
°C Power Dissipation ( PCB Mount, D2 ) (1) 3.7 W
Linear Derating Factor 1.0
Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025 W/°
°°
°C
VGS Gate-to- Source Voltage ( TO-220 ) ±20
VGS Gate-to- Source Voltage ( D2 ) ±10 V
EAS Single Pulse Avalanche Energy ( TO-220 ) (2a) 230
EAS Single Pulse Avalanche Energy ( D2 ) (2b) 440 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ, TSTG Junction & Storage Temperature Range −55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case) °
°°
°C
Thermal Resistance
Parameter Min Typ Max Units
Rθ
θθ
θJC Junction-to Case - - 1.0
Rθ
θθ
θCS Case-to-Sink, Flat, Greased Surface ( TO-220) 0.50
Rθ
θθ
θJA Junction-to Ambient ( PCB Mount, D2 ) - - 40
Rθ
θθ
θJA Junction-to Ambient - - 62
°
°°
°C/W
Description
The Bay Linear MOSF ET’s provid e the designers with the best
combination of fast switching, ruggedized device design, low
0n-resist ance and low cost -effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 Watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
VDSS = 100V
RDS (ON) = 0.077 Ω
ID =28A
Bay Linear
Bay LinearBay Linear
Bay Linear
Linea r Exc e lle nc e
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
IRF540
Electrical Characteristics ( TC = 25°
°°
°C unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
V(BR)DSS Drain-to-source Breakdown
Voltage VGS = 0V, ID = 250µA 100 V
V(BR)DSS /
∆
∆∆
∆TJ Breakdown Voltage
Temperature Coefficient Reference to 25°C,
ID = 1mA - 0.13 - V/°
°°
°C
ID(ON) On-State Drain Current
(note 2) VGS > ID(ON) x RDS(ON)Max 28
A
RDS(ON) Static Drain-to-Source
On-Resistance TO-220: VGS = 10V, ID = 17A
D2: VGS = 5V, ID = 17A (note 4) 0.077
Ω
ΩΩ
Ω
VGS(TH) Gate Threshold Voltage VDS = VGS,ID = 250µA 2.0 - - V
gfs Forward Transconductance VDS = 50V, ID = 17A
8.7 - - S
VDS=100V,VGS=0V 25
IDSS Drain-to –Source Leakage
Current VDS=80V,VGS=0V,TJ=150°C - -
250 µ
µµ
µA
Gate-to-Source Forward
Leakage VGS = 20V 100
IGSS Gate-to-Source Reverse
Leakage VGS = -20V - -
-100
nA
QG Total Gate Charge ID=17V - - 72
Qqs Gate- to -Source Charge VDS=80V - - 11
nC
td ( on) Turn-On Delay Time VDD=50V - 11 -
tf Fall Time RD=2.9 - 43 -
td (off) Turn -O ff Delay T ime RG=9.1Ω - 53 -
tr Rise Time ID=17A - 44 -
ns
LD Internal Drain Inductance
- 4.5
-
LS Internal Source Inductance
Between lead 6mm(0.25in.) from
package and center or die contact - 7.5 - nH
Ciss Input Capacitance VGS=0V - 1700 -
COSS Output Capacitance VDS=25V - 560 -
Crss Reverse Transfer
Capacitance F =1.0MHZ - 120 -
pF
Source-Drain Rating Characteristics
Symbol Parameter Conditions Min Typ Max Units
IS Continuous Source Cur rent (Bod y
Diode) - - 28
ISM Pulsed Source Current (Body
Diode)
MOSFET symbol showing
the integral reverse p-n
junc t ion di ode . - - 110
A
VSD Diode Forward Voltage TJ=25°C, IS=28A,VGS=DV - - 2.5
V
trr Reverse Recovery Time - 180 360 ns
Qrr Reverse Recovery Charge TJ=25°C, IF=17A
di/dt=100A/µs - 1.3 2.8
µ
µµ
µC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by
(LS+LD)
Notes: 1. Repetitive Rating; puls e width limited by max. junction temperature.
2a. VDD = 25V, starting Tj = 25°C, L = 440µH RG = 25Ω, IAS = 28A
2b. VDD = 25V, starting Tj = 25°C, L = 841µH RG = 25Ω, IAS = 28A
3. ISD ≤ 28A, di/dt ≤ 17 0A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (9 25) 940-9556 www.baylin ear.com
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets conta in minimum and maximum specificat io ns that are based on the initial device characterizations. These li mits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The applicati on circuit examples ar e only to explain the representati ve applicatio ns of the devices and ar e not intended to guarantee any c ircuit
desi gn or permit any industrial prop erty right to other rights to execute. Bay Linear takes no responsibility for any prob lem s related to any
industrial property right resulting from the use of th e conten ts shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space eq uipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
