DATA SHEET THYRISTORS AC03DGM, AC03FGM 3 A MOLD TRIAC PACKAGE DRAWING (UNIT: mm) The AC03EGM and AC03FGM are fully diffused mold TRIACs with an effective on-current of 3 A. The repeat peak off-voltages are 400 V and 600 V. FEATURES * Gate trigger current (mode I, III, and IV) at 12 mA or less is guaranteed. * This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible. * High degrees-of-freedom applications design is available due to high gate trigger sensitivity and small hold current distribution. * Employs flame-retardant epoxy resin (UL94V-0). APPLICATIONS Noncontact switches of motor speed control, heater temperature control, lamp light control *TC test bench-mark Standard weight: 1.4 g ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Symbol AC03DGM AC03FGM Unit Remarks Non-repetitive peak off-state voltage VDSM 500 700 V - Repetitive peak off-voltage VDRM 400 600 V - Effective on-state current IT(RMS) 3 (TC = 92C) A Refer to Figures 11 and 12. ITSM 30 (50 Hz 1 cycle) A Refer to Figure 2. Surge on-state current 33 (60 Hz 1 cycle) Fusing current iT2dt 4.0 (1 ms t 10 ms) A2S - Critical rate of rise of on-state current dIT/dt 40 A/s - Peak gate power dissipation PGM 3 (f 50 Hz, Duty 10 %) W - PG(AV) 0.3 W - IGM 0.5 (f 50 Hz, Duty 10 %) A - Junction temperature Tj -40 to +125 C - Storage temperature Tstg -55 to +150 C - Average gate power dissipation Peak gate current The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13536EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 AC03DGM, AC03FGM ELECTRICAL CHARACTERISTICS (Tj = 25C, RGK = 1 k ) Parameter Symbol Conditions Repeat peak off-current IDRM VDM = VDRM On-state voltage VTM ITM = 5 A Gate trigger current Gate trigger voltage MIN. TYP. MAX. Unit Tj = 25C - - 100 A Tj = 125C - - 1 mA - - 1.8 V Refer to Figure 1. mA Refer to Figure 4. V Refer to Figure 4. Mode I T2 +, G+ - - 12 II VDM = 12 V T2 -, G+ - - - RL = 30 T2 -, G- - - 12 III IGT Remarks - IV T2 +, G- - - 12 Mode I T2 +, G+ - - 1.5 VDM = 12 V T2 -, G+ - - - RL = 30 T2 -, G- - - 1.5 T2 +, G- - - 1.5 0.2 - - V - - 10 - mA - - 100 - V/s - 5 - - V/s - II III VGT IV Gate non-trigger voltage Hold current Critical rate of rise of offstate voltage 1 Tj = 125C, VDM = VDRM 2 VGD IH dv/dt VDM = 24 V, ITM = 5 A 2 Tj = 125C, VDM = VDRM 3 Tj = 125C Commutating critical rate of rise of off-state voltage (dv/dt)c (diT/dt)c = -1.6 A/ms VD = 400 V Thermal resistance* Rth(j-c) Junction-to-case AC - - 10 C/W Rth(j-a) Junction-to-ambient AC - - 75 C/W Refer to Figure 13. * The thermal resistance at 50 Hz and 60 Hz sine wave current, which is shown on the following expression: Tj(max)-TC Tj(max) :Maximum junction temperature Rth(j-c) = PT(AV) :Case temperature TC PT(AV) :Average on-dissipation 2 Data Sheet D13536EJ3V0DS AC03DGM, AC03FGM Data Sheet D13536EJ3V0DS 3 AC03DGM, AC03FGM 4 Data Sheet D13536EJ3V0DS AC03DGM, AC03FGM [MEMO] Data Sheet D13536EJ3V0DS 5 AC03DGM, AC03FGM * The information in this document is current as of July, 2001. 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