BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY - BCW65 BCW68 - BCW66 ABSOLUTE MAXIMUM PARAMETER -- Collector-Emitter _.-- Collector-Eminer I 1 1 I TYPES - BCW67 I SOT23 RATINGS. ----_ Voltage Voltage ---..------ Emitter-Base voltage ---- ---- Peak Pulse Current(lOms) . .. --------... -- Continuous Collector Current ------ --.. .-- Base Current ----_--_.. --.--_.-- Power Dissipation at Tamb=250C BCW67 BCW68 UNIT -45 -60 `v .._ -45 v `EBO_ ~ Ic *3 Rar:ae --.---- IB `- Ptot - T::T-. + 3-29 --..------ -32- ICM .-- Operating and Storage Temperature SYMBOL vCES vCEO__ _ -5' v -1000 mA -800 mA ..---- ------ 1 mA `-"--: -100 "--"""-zO-----55 to +150 "------mw cc BCW67 BCW68 ELECTRICAL CHARACTERISTICS (at Tamb 25C unless otherwise etated). SVMBOL MIN. BCW87 BCW88 `(BR)CEO -32 -45 BCW87 BCW88 `(FIR)CES PARAMETER Collector-Emittsrr Breakdown Voltage , Emitter-Base Braakdown Voltaga Collector-Emitter Cut-off Current BCW67 BCW88 Base-Emitter v(aR)Eao -5 -20 ICES Saturation saturation Voltage Voltage Static Forward Current Transfar I 1 I , , BCW87A BCW8BF `CE(sat) v BE(sat) -20 -lo CONDITIONS. v lc-&-lOmA lcE&-lOmA l~ao =-10yA nA @ VcEs =-32V V=Sd2V BCW87C BCW88H hFE vcE~=-45v Vm@SV , Tah=HPC -20 nA VEao=-4" -0.3 v v &loornA Is. -lorlul v l+L)Om~ lB.-5CrmA* VCE .-lV VCE =-l V* VCE=-2V* & -500mA. Is +0-r& 170 250 1~-10m~ 1~-100m~ l#OOmA. 120 180 &l 250 400 1~-10mA, VCE=-lV 1~-100mA. VCE =-l V* l#OOm~ VCE =-2V* 180 250 100 350 830 1~-10mA, 1~-100mA, l#OOm~ 35 h~~ ,Ttilw"C I 75 100 BCVVB7B BCWB8G , nA PA -2 [ IC=-lOLA IF-IOWA v , -0.7 h~E UNIT I I I I ESO Cut-Off Current Collector-Emitter -80 MAX. -10 , Emitter-Base -45 lYP. VCE.-l V Vc~ .-l V* VCE.-2V* , Transition Frequency fT 100 t Collector-Basa capacitance Cti I 12 MHz Ic =-20mA, VCE =-1 OV f = 100 MHz 18 pF VCso =-10", f =1 MHz 84 pF VEao=-0.5V, f =1 MHz 10 dB I I Emitter-Besa Capacitance Noise Figure c;ebo N 2 ~ :;"I?)=%-l=Af=200Hz Switching times: Turn-On Time Turn-Off Time 100 t t; 400 ns ns Spice parameter data is available upon request for this device . . *Measured under pulsed conditions. Pulse width=300#s. Duty cycle <2% 3-30 le-150mA ~il;~;-15mA w