BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 36 - 2 1 of 5
www.diodes.com August 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
SURFACE MOUNT ZENER DIO DE
Features
• Planar Die Construction
• 500mW Power Dissipation
• General Purpose, Medium Current
• Ideally Suited for Automated Assembly Processes
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOD123
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: Cathode Band
• Weight: 0.010 grams (approximate)
Ordering Information (Notes 5 & 6)
Part Number Qualification Case Packaging
(Type Number)-7-F Commercial SOD123 3000/Tape & Reel
(Type Number)Q-7-F Automotive SOD123 3000/Tape & Reel
(Type Number)-13-F Commercial SOD123 10,000/Tape & Reel
(Type Number)Q-13-F Automotive SOD123 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com.
6. For (Type Number), please see the Electrical Characteristics Table. Example: 6.2V Zener = BZT52C6V2Q-13-F.
Marking Information
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code N P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
xx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
xx
YM
SOD123
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 36 - 2 2 of 5
www.diodes.com August 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF 0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) @TL = 75°C PD 500 mW
Thermal Resistance, Junction to Ambient Air (Note 7) R
θ
JA 350 °C/W
Thermal Resistance, Junction to Lead (Note 8) R
θ
JL 150 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Type
Number Marking
Codes
Zener Voltage Range
(Note 9)
Maximum Zener
Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 9)
Temperature
Coefficient
@ IZTC
mV/°C
Test
Current
IZTC
VZ @ IZT I
ZT Z
ZT @ IZT Z
Z
K
@ IZK I
Z
K
I
R @ VR
Nom
(V) Min (V) Max (V) mA Ω mA uA V Min Max mA
BZT52C2V0 WY 2.0 1.91 2.09 5 100 600 1.0 150 1.0 -3.5 0 5
BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5
BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5
BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5
BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5
BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5
BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5
BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 - 5
BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 - 5
BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 - 2
BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 - 2
BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 - 2
BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 - 2
BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 - 2
BZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32.0 37.6 - 5
BZT52C47 WV 47 44.0 50.0 5 100 750 1.0 0.1 35.0 42.0 - 5
BZT52C51 WW 51 48.0 54.0 5 100 750 1.0 0.1 38.0 46.6 - 5
Notes: 7. Device mounted on FR-4 substrate, single-sided PCB with suggested pad layout.
8. Thermal Resistance measurement obtained via infrared scan method. Specification valid for BZT52C2V0 - BZT52C39 devices only.
9. Short duration pulse test used to minimize self-heating effect.
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 36 - 2 3 of 5
www.diodes.com August 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
0
0.1
0.2
0.3
0.4
0.5
25050
75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
T , AMBIENT TEMPERA TURE ( C)
Fig. 1 Power Derating Curve
A
°
0.6
Note 7
0
5
10
15
20
0246810
V , ZENER VOLTAGE (V)
Fig . 2 Typ ical Zene r Bre akd ow n C haracter istics
Z
I, ZENE
R
C
U
R
R
EN
T
(mA)
Z
C2V0
C2V4
C2V7
C3V0
C3V3
C3V6
C3V9 C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
0
10
20
30
0
I, ZE
N
E
R
C
U
R
R
E
N
T
(mA)
Z
V , ZENER VOLTAGE (V)
Fi g. 3 Typi ca l Zener B r ea kdo w n C ha r acter i s t ics
Z
10 20 30 40
T = 25°C
J
Test Current I
5mA
Z
Test Current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C15
0
2
4
6
8
10
10
020 30 40 50 60 70 80 90 100
I, ZE
N
E
R
C
U
R
R
E
N
T
(mA)
Z
V , ZENER VOLTAGE (V)
Fig. 4 Typical Zener Breakdown Characteristics
Z
C , TOTAL CAPACITANCE (pF)
T
10
100
1,000
10 1001V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Typical Total Capacitance vs. Nominal Zener Voltage
Z
T = 25 °C
f = 1MHz
J
V = 1V
R
V = 2V
R
V = 1V
R
V = 2V
R
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 36 - 2 4 of 5
www.diodes.com August 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOD123
Dim Min Max
A 0.55 Typ
B 1.40 1.70
C 3.55 3.85
H 2.55 2.85
J 0.00 0.10
K 1.00 1.35
L 0.25 0.40
M 0.10 0.15
α 0 8°
All Dimensions in mm
Dimensions Value (in mm)
G 2.250
X 0.900
X1 4.050
Y 0.950
K
L
M
C
H
BA
YX
X1
G
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 36 - 2 5 of 5
www.diodes.com August 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
IMPORTANT NOTICE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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