5-1
Semiconductor
September 1998
Features
• 12A, 180V and 200V
•r
DS(ON) = 0.250Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching conver ters, motor dr ivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09293.
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM12N18 TO-204AA RFM12N18
RFM12N20 TO-204AA RFM12N20
RFP12N18 TO-220AB RFP12N18
RFP12N20 TO-220AB RFP12N20
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998 File Number 1461.2
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
/
Subject
(12A,
180V
and
200V,
0.250
Ohm, N-
Channel
Power
MOS-
FETs)
/
Author
()
/
Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/
Creator
()
/
DOCIN
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS 180 200 180 200 V
Drain to Gate Voltage (RGS = 1mΩ) (Note 1). . . . . . . . . . . . . . . VDGR 180 200 180 200 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 12
30 12
30 12
30 12
30 A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
0.8 100
0.8 75
0.6 75
0.6 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V
RFM12N18, RFP12N18 180 - - V
RFM12N20, RFP12N20 200 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 125oC--25µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω
Drain to Source On Voltage (Note 2) VDS(ON) ID = 12A, VGS = 10V - - 3.0 V
Turn-On Delay Time td(ON) VDD = 100V, ID≈ 6A, RG = 50Ω,
RL = 16.5Ω, VGS = 10V,
(Figures 10, 11, 12)
-3550ns
Rise Time tr- 130 200 ns
Turn-Off Delay Time td(OFF) - 120 180 ns
Fall Time tf- 105 160 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz,
(Figure 9) - - 1700 pF
Output Capacitance COSS - - 600 pF
Reverse Transfer Capacitance CRSS - - 300 pF
Thermal Resistance Junction to Case RθJC RFM12N18, RFM12N20 - - 1.25 oC/W
RFP12N18, RFP12N20 - - 1.67 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 6A - - 1.4 V
Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 325 - ns
NOTE:
2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM12N18, RFM12N20, RFP12N18, RFP12N20
5-3
Typical Performance
Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
025 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
14
12
10
8
6
4
2
TC = 25oC
1 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
ID, DRAIN CURRENT (A)
ID (MAX)
CONTINUOUS
OPERATION IN
THIS AREA MAY BE
LIMITED BY rDS(ON)
VDSS (MAX) 200V
RFM12N20, RFP12N20
VDSS (MAX) 180V
RFM12N18, RFP12N18
30
25
20
15
10
5
0
ID, DRAIN CURRENT (A)
01234567
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
CASE TEMPERATURE
TC = 25oC
VGS = 4V
VGS = 5V
VGS = 6V
VGS = 7V
VGS = 20V
VGS = 10V VGS = 8V
VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
-40oC
25oC
125oC
125oC
-40oC
012345678910
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0
5
10
15
20
25
30
35
40 0.6
0.5
0.4
0.3
0.2
0.1
00 5 10 15 20 25 30 35
ID, DRAIN CURRENT (A)
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
125oC
25oC
-40oC
RFM12N18, RFM12N20, RFP12N18, RFP12N20
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD V OLT A GE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING W AVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance
Curves Unless Otherwise Specified (Continued)
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
2
1.5
1
0.5
0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
ID = 12A, VGS = 10V
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
NORMALIZED GATE
VGS = VDS
ID = 250µA
THRESHOLD VOLTAGE
0 1020304050
VDS, DRAIN TO SOURCE VOLTAGE (V)
1400
1200
1000
800
600
400
200
0
1600
C, CAPACITANCE (pF)
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
200
150
100
50
0
10
8
6
4
2
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
IG(REF)
IG(ACT)
20 IG(REF)
IG(ACT)
80
t, TIME (µs)
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
VDS
VDD = BVDSS VDD = BVDSS
0.75BVDSS
0.50BVDSS
0.25BVDSS
0.75BVDSS
0.50BVDSS
0.25BVDSS
RL = 16.67Ω
IG(REF) = 1mA
VGS = 10V
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
RFM12N18, RFM12N20, RFP12N18, RFP12N20
