2008. 7. 9 1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
ML
L
E
I
I
O
C
H
NN
Q
D
Q
P
P
ELECTRICAL CHARACTERISTICS (Ta=25 )
E
C
B
Equivalent Circui
t
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 10 V
Collector Current DC IC5A
Pulse ICP 10
Base Current IB2 A
Collector Power Dissipation (Tc=25 )PC75 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
DC Current Gain
hFE(1) VCE=5V, IC=1A 18 - 35
hFE(2) VCE=5V, IC=2A 8 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC=0.5A, IB=0.1A - - 0.5
V
IC=2A, IB=0.5A - - 0.6
IC=4A, IB=1A - - 1
Base-Emitter Saturation Voltage VBE(sat)
IC=1A, IB=0.2A ---V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fTVCE=10V, IC=0.5A 4 - - MHz
Turn-On Time ton
IB1
150Ω
B1
I
CC
V =300V
IB2
IB2
300µS
IB1=0.4A, IB2=-1A
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
- - 0.15 S
Storage Time tstg 2 - 5 S
Fall Time tf- - 0.8 S
Diode Forward Voltage VFIF=2A - - 1.6 V
*Reverse recovery tims (di/dt=10A/ S) trr
IF=0.4A - 800 - nS
IF=1A - 1.4 - S
IF=2A - 1.9 - S
2008. 7. 9 2/3
MJE13005D
Revision No : 2
COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
VOLTAGE VBE(sat),VCE(sat) (V)
SWITCHING CHARACTERISTIC
1
SWITCHING TIME (µS)
0.1
0.01
0.1
10
COLLECTOR CURRENT IC (A)
1
10
VCC=300V
IC=5IB1,=-2.5IB2
tf
tstg
Cob (pF)
COMMON
EMITTER
hFE - ICCob - VCB
VBE(sat),VCE(sat) - IC
0.01
1
0.1 1
100
hFE - IC
10
10
VCE=1V
0.01
1
0.1 1
100
10
10
VCE=5V
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
IC - VCE
0123456789
0
1
2
3
4
5
10
IB=0V
0.01
0.01
0.1 1
10
10
1
0.1
13
1
10 30 100 300 1
k
3
5
10
30
50
100
300
500
1k
f=1MHz
Ta=25 C
IC/IB=10
IB=500mA
IB=400mA
IB=300mA
IB=200mA
IB=100mA
IB=50mA
Ta=125 C
25 C
-20 C
Ta=125 C
25 C
-20 C
VCE(sat)
VBE(sat)
2008. 7. 9 3/3
MJE13005D
Revision No : 2
0
COLLECTOR POWER DISSIPATION PC (W)
0
PC - Ta
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
25 50 75 100 125 150 175 200
20
40
60
80
100
Tc=Ta INFINITE HEAT SINK
0.01
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 100 1000
0.1
1
10
100
AMBIENT TEMPERATURE Ta ( C)
FORWARD CURRENT IF (A)
REVERSE RECOVERY TIME trr (µS)
FORWARD DIODE CURRENT IF (A)
FORWARD DIODE VOLTAGE VF (V)
VF - IF
1.0
0.8
1.5 2.0
trr - IF
1.4
1.0
1.2
1.6
0.01 0.1 1
10
10
1
0.1
10µs
1µs
5ms
1ms
DC
