©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
2N3819
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06”
Symbol Parameter Ratings Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage -25 V
IDDrain Current 50 mA
IGF Forward Gate Current 10 mA
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 25 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0 2.0 nA
VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 2.0nA 8.0 V
VGS Gate-Source Voltage VDS = 15V, ID = 200µA -0.5 -7.5 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0 2.0 20 mA
Small Signal Characteristics
gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz 2000 6500 µmhos
goss Output Conductance VDS= 15V, VGS = 0, f = 1.0KHz 50 µmhos
yfs Forward Trans fer Adm ittance VDS= 15V, VGS = 0, f = 1.0KHz 1600 µmhos
Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 8.0 pF
Crss Reverse Trans fer Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 4.0 pF
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourced from process 50.
TO-92
1. Drain 2. Gate 3. Source
1
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
2N3819
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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any manner without notice.
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