2N5320
SMALL SIGNAL NPN TRANSIST OR
DESCRIPTION
The 2N5320 is a silicon Epitaxial Planar NPN
transistor in Jedec TO-39 metal case. It is
especially intended for high-voltage medium
power application in industrial and commercial
equipments.
The complementary PNP type is the 2N5322
®
INT E R NAL SCH E M ATI C DIAG RA M
September 2002
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEV Collector-Emitter Voltage (VBE = 1.5V) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 75 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 1.2 A
ICM Collector Peak Current 2 A
IBBase Current 1 A
Ptot Total Dissipation at Tamb = 25 oC1W
P
tot Total Dissipation at TC = 25 oC10W
T
stg Storage Temperature -65 to 175 oC
TjMax Operating Junction Temperature 175 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Amb ient Max
15
150
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 80 V 0.5 µA
IEBO Collector Cut-off
Current (IC = 0 ) VEB = 5 V 0.1 µA
V(BR)CEV Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = 100 µA100 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA 75 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V
VBE∗Base-Emitter Voltag e IC = 500 mA VCE = 4 V 1.1 V
hFE∗DC Current Gain IC = 50 0 m A VCE = 4 V
IC = 1 A VCE = 2 V 30
10 130
fTTransition Frequency IC = 50 mA VCE = 4 V f = 10 MHz 50 MHz
ton Turn-on Time IC = 50 0 m A VCC = 30 V
IB1 = 50 mA 80 ns
toff Turn-off Time IC = 50 0 mA VCC = 30 V
IB1 = -IB2 = 50 mA 800 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
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