BUZ 32 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 29 C Values Unit A 9.5 IDpuls Pulsed drain current TC = 25 C 38 Avalanche current,limited by Tjmax IAR 9.5 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 6.5 mJ EAS ID = 9.5 A, VDD = 50 V, RGS = 25 L = 2 mH, Tj = 25 C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 200 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 6 A Semiconductor Group nA - 2 0.3 0.4 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 6 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.6 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 38 V 1.4 1.7 trr ns - 200 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 9.5 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 19 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.6 - 07/96 BUZ 32 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 10 80 A W Ptot ID 8 60 7 50 6 40 5 4 30 3 20 2 10 0 0 1 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 t = 7.6s p 10 s A ZthJC DS /I D ID K/W =V 100 s R DS (o n) 10 1 10 0 1 ms 10 -1 D = 0.50 0.20 10 10 ms 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 32 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 22 1.3 Ptot = 75W A k j l i ID h 16 g 14 f 12 10 e 8 d 6 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 RDS (on) d e f g h 1.0 0.8 0.7 0.6 0.5 k 10.0 4 0.4 i 0.3 k j 0.2 VGS [V] = b 2 a 4.0 4.5 0.1 a 0 0 c 0.9 l 20.0 c b 1.1 VGS [V] 18 a b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 4 8 12 16 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 13 6.0 A S 11 ID 22 ID 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 2 1.0 1 0.5 0 0 0.0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 A ID 07/96 12 BUZ 32 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 6 A, VGS = 10 V 1.3 4.6 V 1.1 RDS (on) 98% 4.0 VGS(th) 1.0 3.6 0.9 3.2 0.8 2.8 0.7 2.4 0.6 2% 2.0 98% 0.5 1.6 typ 0.4 typ 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 C typ Coss Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 32 Avalanche energy EAS = (Tj ) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 , L = 2 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,2 VDS max 0,8 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 C 160 Tj 0 4 8 12 16 20 24 28 32 nC 38 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 32 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96