BCP53T series
80 V, 1 A PNP medium power transistors
Rev. 2 — 29 April 2019 Product data sheet
1. Product profile
1.1. General description
PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Package NPN comlementType number
Nexperia JEDEC
BCP53T BCP56T
BCP53-10T BCP56-10T
BCP53-16T
SOT223 SC-73
BCP56-16T
1.2. Features and benefits
High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
1.3. Applications
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -80 V
ICcollector current - - -1 A
ICM peak collector current single pulse; tp ≤ 1 ms - - -2 A
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
Symbol Parameter Conditions Min Typ Max Unit
DC current gain
BCP53T [1] 63 - 250
BCP53-10T [1] 63 - 160
hFE
BCP53-16T
VCE = -2 V; IC = -150 mA
[1] 100 - 250
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
2. Pinning information
Table 3. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 C collector
3 E emitter
4 C collector
1 32
4
sym132
E
C
B
3. Ordering information
Table 4. Ordering information
PackageType number
Name Description Version
BCP53T
BCP53-10T
BCP53-16T
SC-73 plastic, surface-mounted package with increased heatsink;
4 leads
SOT223
4. Marking
Table 5. Marking
Type number Marking code
BCP53T BCP53T
BCP53-10T P5310T
BCP53-16T P5316T
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 2 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -100 V
VCEO collector-emitter voltage open base - -80 V
VEBO emitter-base voltage open collector - -5 V
ICcollector current - -1 A
ICM peak collector current single pulse; tp ≤ 1 ms - -2 A
IBbase current - -0.2 A
IBM peak base current single pulse; tp ≤ 1 ms - -0.3 A
[1] - 0.6 W
[2] - 1 W
[3] - 1.3 W
[4] - 1.3 W
Ptot total power dissipation Tamb ≤ 25 °C
[5] - 1.8 W
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
[5] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm.2
Tamb (°C)
-75 -25 25 75 125 175
aaa-023487
2
Ptot
(W)
0
0.4
0.8
1.2
1.6
(1)
(4)
(5)
(2), (3)
(1) FR4 PCB; 4-layer copper; 1 cm2
(2) FR4 PCB; single-sided copper; 6 cm2
(3) FR4 PCB; 4-layer copper; standard footprint
(4) FR4 PCB; single-sided copper; 1 cm2
(5) FR4 PCB; single-sided copper; standard footprint
Fig. 1. Power derating curves
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 3 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023488
VCE (V)
-10-1 -103
-1 -10 -102
-10
IC
(A)
-10-3
-10-2
-10-1
-1
DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm2
DC
tp = 10 µs
100 µs
1 ms
1 s
10 ms
100 ms
FR4 PCB; single-sided copper; standard footprint
single pulse; Tamb = 25 °C
Fig. 2. Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecor-
emitter voltage
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 4 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 209 K/W
[2] 125 K/W
[3] 97 K/W
[4] - - 97 K/W
Rth(j-a) thermal resistance from junction to ambient
[5] - - 70 K/W
R(j-sp) thermal resistance from junction to solder point
in free air
- - 18 K/W
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
[5] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm2.
aaa-023489
tp (s)
10-5 102103
10110-2
10-3
10-4 10-1
103
102
10
Zth(j-a)
(K/W)
1
duty cycle = 1
0.02
0.01
0
0.05
0.10
0.33
0.20
0.50
0.75
FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 5 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023490
tp (s)
10-5 102103
10110-2
10-3
10-4 10-1
103
102
10
Zth(j-a)
(K/W)
1
0.02
0.01
0
duty cycle = 1
0.05
0.10
0.33
0.20
0.50
0.75
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023491
tp (s)
10-5 102103
10110-2
10-3
10-4 10-1
102
Zth(j-a)
(K/W)
1
10
0.02
0.01
0
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023492
tp (s)
10-5 102103
10110-2
10-3
10-4 10-1
102
Zth(j-a)
(K/W)
1
10
0.02
0.01
0
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
FR4 PCB; 4-layer copper; tin-plated and standard footprint
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 6 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023493
tp (s)
10-5 102103
10110-2
10-3
10-4 10-1
102
Zth(j-a)
(K/W)
1
10
0.02
0.01
0
duty cycle = 1
0.50
0.33
0.75
0.20
0.10
0.05
FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm2
Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base
breakdown voltage
IC = -100 µA; IE = 0 A -100 - V
V(BR)CEO collector-emitter
breakdown voltage
IC = -2 mA; IE = 0 A -80 - V
V(BR)EBO emitter-base
breakdown voltage
IE = -100 µA; IC = 0 A -5 - V
VCB = -30 V; IE = 0 A - - -100 nAICBO collector-base
cut-off current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -10 μA
IEBO emitter-base
cut-off current
VEB = -5 V; IC = 0 A - - -100 nA
DC current gain
VCE = -2 V; IC = -5 mA 63 - -BCP53T, -10T, -16T
VCE = -2 V; IC = -500 mA [1] 40 - -
BCP53T VCE = -2 V; IC = -150 mA [1] 63 - 250
BCP53-10T VCE = -2 V; IC = -150 mA [1] 63 - 160
hFE
BCP53-16T VCE = -2 V; IC = -150 mA [1] 100 - 250
VCEsat collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA [1] - - -500 mV
VBE base-emitter voltage VCE = -2 V; IC = -500 mA [1] - - -1 V
fTtransition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz 100 140 - MHz
Cccollector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 7 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023494
250
hFE
0
IC (mA)
-10-1 -104
-103
-1 -102
-10
50
100
150
200
(1)
(2)
(3)
VCE = -2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 8. DC current gain as a function of collector
current; typical values
aaa-023495
200
hFE
0
IC (mA)
-10-1 -104
-103
-1 -102
-10
50
100
150
(1)
(2)
(3)
Tamb = 25 °C
(1) VCE = -1 V
(2) VCE = -2 V
(3) VCE = -5 V
Fig. 9. DC current gain as a function of collector
current; typical values
VCE (V)
0 -5-1 -2 -3 -4
aaa-023496
-1
IC
(A)
0
-0.2
-0.4
-0.6
-0.8
-13.5
IB (mA) = -15
-10.5
-7.5
-4.5
-1.5
-12
-9
-6
-3
Tamb = 25 °C
Fig. 10. Collector current as a function of collector-
emitter voltage; typical values
aaa-023497
-1.2
VBE
(V)
0
IC (mA)
-10-1 -104
-103
-1 -102
-10
-0.3
-0.6
-0.9
(1)
(2)
(3)
VCE = -2 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 11. Base-emitter voltage as a function of collector
current; typical values
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 8 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023498
-1.2
VBEsat
(V)
0
IC (mA)
-10-1 -104
-103
-1 -102
-10
-0.4
-0.8 (1)
(2)
(3)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 12. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-023499
-1
VCESat
(V)
-10-2
IC (mA)
-10-1 -104
-103
-1 -102
-10
-10-1
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-023500
-1
VCESat
(V)
-10-2
IC (mA)
-10-1 -104
-103
-1 -102
-10
-10-1
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 5
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
VCB (V)
0 -20 -40 -60 -80 -100
aaa-023501
25
Cc
(pF)
0
5
10
15
20
f = 1 MHz; Tamb = 25 °C
Fig. 15. Collector capacitance as a function of collector-
base voltage; typical values
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 9 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
VEB (V)
0 -1 -2 -3 -4 -5
aaa-023502
70
Ce
(pF)
0
10
20
30
40
50
60
f = 1 MHz; Tamb = 25 °C
Fig. 16. Emitter capacitance as a function of emitter-
base voltage; typical values
aaa-023503
103
fT
(MHz)
10
IC (mA)
-10-1 -103
-1 -102
-10
102
VCE = -5 V
f = 100 MHz; Tamb = 25 °C
Fig. 17. Transition frequency as a function of collector
current; typical values
8. Test information
8.1. Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
9. Package outline
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7
3.7
3.3
1.1
0.7
1 32
4
4.6
2.3 0.8
0.6
0.32
0.22
Fig. 18. Package outline SOT223 (SC-73)
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 10 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
10. Soldering
sot223_fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
2 31
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig. 19. Reflow soldering footprint for SOT223 (SC-73)
sot223_fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7
2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig. 20. Wave soldering footprint for SOT223 (SC-73)
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 11 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCP53T_SER v.2 20190429 Product data sheet - BCP53T_SER v.1
Modifications: Characteristics: breakdown voltages added
The format of this data sheet has been redesigned to comply with the identity guidelines
of Nexperia.
Legal texts have been adapted to the new company name where appropriate.
BCP53T_SER v.1 20160705 Product data sheet - -
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 12 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
12. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
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with the same product type number(s) and title. A short data sheet is
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detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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specifications and product descriptions, at any time and without notice. This
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Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
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Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 13 / 14
Nexperia BCP53T series
80 V, 1 A PNP medium power transistors
Contents
1. Product profile.............................................................. 1
1.1. General description......................................................1
1.2. Features and benefits..................................................1
1.3. Applications................................................................. 1
1.4. Quick reference data................................................... 1
2. Pinning information......................................................2
3. Ordering information....................................................2
4. Marking.......................................................................... 2
5. Limiting values............................................................. 3
6. Thermal characteristics............................................... 5
7. Characteristics..............................................................7
8. Test information..........................................................10
8.1. Quality information.....................................................10
9. Package outline.......................................................... 10
10. Soldering................................................................... 11
11. Revision history........................................................ 12
12. Legal information......................................................13
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 April 2019
BCP53T_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet Rev. 2 — 29 April 2019 14 / 14