November 2010 Doc ID 13689 Rev 4 1/15
15
STGF19NC60SD
STGP19NC60SD
20 A, 600 V fast IGBT with Ultrafast diode
Features
■Very low on-voltage drop (VCE(sat))
■Minimum power losses at 5 kHz in hard
switching
■Optimized performance for medium operating
frequencies.
■IGBT co-packaged with Ultrafast freewheeling
diode
Application
Medium frequency motor drives
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
TO-220
12
3
TA B
12
3
TO-220FP
Table 1. Device summary
Order codes Marking Package Packaging
STGF19NC60SD GF19NC60SD TO-220FP Tube
STGP19NC60SD GP19NC60SD TO-220 Tube
www.st.com
Contents STGF19NC60SD, STGP19NC60SD
2/15 Doc ID 13689 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGF19NC60SD, STGP19NC60SD Electrical ratings
Doc ID 13689 Rev 4 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
VCES Collector-emitter voltage (VGE = 0) 600 V
IC(1)
1. Calculated according to the iterative formula
Continuous collector current at TC = 25°C 40 17 A
IC(1) Continuous collector current at TC = 100°C 20 11 A
ICP (2)
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current 80 A
ICL (3)
3. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current 80 A
IFDiode RMS forward current at TC = 25°C 20 A
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal 50 A
VGE Gate-emitter voltage ±20 V
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500 V
PTOT Total dissipation at TC = 25°C 130 32 W
TjOperating junction temperature - 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
Rthj-c
Thermal resistance junction-case IGBT 0.96 3.9 °C/W
Thermal resistance junction-case diode 3 5.5 °C/W
Rthj -a Thermal resistance junction-ambient 62.5 °C/W
ICTC
() Tjmax()
TC
–
Rthj c–VCE sat()max()
Tjmax()
ICTC
(),()×
----------------------------------------------------------------------------------------------------------=
Electrical characteristics STGF19NC60SD, STGP19NC60SD
4/15 Doc ID 13689 Rev 4
2 Electrical characteristics
(Tj = 25°C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE= 0)
IC= 1mA 600 V
VCE(sat) Collector-emitter saturation
voltage
VGE= 15V, IC= 12A
VGE= 15V, IC=12A,Tj =125°C
1.55
1.35
1.9 V
V
VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.2 6.2 V
ICES
Collector cut-off current
(VGE = 0)
VCE= 600 V
VCE= 600 V, Tj =125°C
150
1
µA
mA
IGES
Gate-emitter leakage
current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA
gfs Forward transconductance VCE = 15V, IC= 12A 10 S
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1MHz,
VGE = 0 -
1190
135
28.5
-
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480V, IC = 12A,
VGE = 15V,
Figure 20
-
54.5
8.7
25.8
-
nC
nC
nC
STGF19NC60SD, STGP19NC60SD Electrical characteristics
Doc ID 13689 Rev 4 5/15
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 21
-
17.5
6.2
1870
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 21
-
17
6.5
1700
-
ns
ns
A/µs
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 21
-
90
175
215
-
ns
ns
ns
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 21
-
155
245
290
-
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon
Eoff(1)
Ets
1. Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 19
-
135
815
995
-
µJ
µJ
µJ
Eon
Eoff(1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Tj = 125 °C
Figure 19
-
200
1175
1375
-
µJ
µJ
µJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VFForward on-voltage IF = 12 A
IF = 12 A, Tj = 125 °C
2.3
2.0
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs
Figure 22
31
29.5
1.9
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs, Tj = 125 °C
Figure 22
48.5
70.5
3
ns
nC
A
Electrical characteristics STGF19NC60SD, STGP19NC60SD
6/15 Doc ID 13689 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations
STGF19NC60SD, STGP19NC60SD Electrical characteristics
Doc ID 13689 Rev 4 7/15
Figure 8. Normalized gate threshold voltage
vs temperature
Figure 9. Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
Electrical characteristics STGF19NC60SD, STGP19NC60SD
8/15 Doc ID 13689 Rev 4
Figure 14. Turn-off SOA Figure 15. Thermal impedance for TO-220
Figure 16. Thermal impedance for TO-220FP Figure 17. Forward voltage drop versus
forward current
Figure 18. IC vs. frequency
0
5
10
15
20
25
30
35
40
45
50
0123456
I(A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
STGF19NC60SD, STGP19NC60SD Electrical characteristics
Doc ID 13689 Rev 4 9/15
2.2 Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
●The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
PD = ΔT / RTHJ-C
considering ΔT = TJ - TC = 125 °C- 75 °C = 50°C
●The conduction losses are:
Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125°C.
●Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
PSW = (EON + EOFF) * freq.
Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V,
VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see
Note 1), while the tail of the collector current is included in the EOFF measurements.
Test circuits STGF19NC60SD, STGP19NC60SD
10/15 Doc ID 13689 Rev 4
3 Test circuits
Figure 19. Test circuit for inductive load
switching
Figure 20. Gate charge test circuit
Figure 21. Switching waveform Figure 22. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
STGF19NC60SD, STGP19NC60SD Package mechanical data
Doc ID 13689 Rev 4 11/15
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Package mechanical data STGF19NC60SD, STGP19NC60SD
12/15 Doc ID 13689 Rev 4
Figure 23. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
STGF19NC60SD, STGP19NC60SD Package mechanical data
Doc ID 13689 Rev 4 13/15
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
∅P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Revision history STGF19NC60SD, STGP19NC60SD
14/15 Doc ID 13689 Rev 4
5 Revision history
Table 10. Document revision history
Date Revision Changes
02-Jul-2007 1 First release
13-Aug-2007 2 From target to preliminary version
18-Sep-2007 3 Added new section: Electrical characteristics (curves)
05-Nov-2010 4
– Cover page has been updated
– Modified gate threshold voltage range on Ta bl e 4 : Static
– Updated TO-220 mechanical data
– Added new package, mechanical data: TO-220FP
STGF19NC60SD, STGP19NC60SD
Doc ID 13689 Rev 4 15/15