STGF19NC60SD STGP19NC60SD 20 A, 600 V fast IGBT with Ultrafast diode Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies. TAB 3 1 IGBT co-packaged with Ultrafast freewheeling diode TO-220FP 3 2 1 2 TO-220 Application Medium frequency motor drives Description This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging STGF19NC60SD GF19NC60SD TO-220FP Tube STGP19NC60SD GP19NC60SD TO-220 Tube November 2010 Doc ID 13689 Rev 4 1/15 www.st.com 15 Contents STGF19NC60SD, STGP19NC60SD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 13689 Rev 4 STGF19NC60SD, STGP19NC60SD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP VCES Collector-emitter voltage (VGE = 0) IC(1) Continuous collector current at TC = 25C 40 17 A IC(1) Continuous collector current at TC = 100C 20 11 A 600 V ICP (2) Pulsed collector current 80 A ICL (3) Turn-off latching current 80 A Diode RMS forward current at TC = 25C 20 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 50 A VGE Gate-emitter voltage 20 V VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) PTOT Total dissipation at TC = 25C IF Tj 130 Operating junction temperature 2500 V 32 W - 55 to 150 C 1. Calculated according to the iterative formula T j ( max ) - T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj - c x V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. Vclamp = 80% of VCES, Tj =150 C, RG=10 , VGE=15 V Table 3. Thermal data Value Symbol Rthj-c Rthj -a Parameter Unit TO-220 TO-220FP Thermal resistance junction-case IGBT 0.96 3.9 C/W Thermal resistance junction-case diode 3 5.5 C/W Thermal resistance junction-ambient Doc ID 13689 Rev 4 62.5 C/W 3/15 Electrical characteristics 2 STGF19NC60SD, STGP19NC60SD Electrical characteristics (Tj = 25C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE= 0) VCE(sat) Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tj =125C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 A ICES Collector cut-off current (VGE = 0) VCE= 600 V IGES gfs Table 5. Symbol 4/15 IC= 1mA Min. Typ. Max. 600 Unit V 1.55 1.35 1.9 V V 6.2 V VCE= 600 V, Tj =125C 150 1 A mA Gate-emitter leakage current (VCE = 0) VGE= 20V, VCE= 0 100 nA Forward transconductance VCE = 15V, IC= 12A 4.2 10 S Dynamic Parameter Test conditions Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 25V, f = 1MHz, VGE = 0 Min. Typ. Max. Unit - 1190 135 28.5 - pF pF pF - 54.5 8.7 25.8 - nC nC nC VCE = 480V, IC = 12A, VGE = 15V, Figure 20 Doc ID 13689 Rev 4 STGF19NC60SD, STGP19NC60SD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Table 7. Symbol Eon Eoff(1) Ets Eon Eoff(1) Ets Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Min. Typ. Max. Unit - 17.5 6.2 1870 - ns ns A/s - 17 6.5 1700 - ns ns A/s - 90 175 215 - ns ns ns - 155 245 290 - ns ns ns Min. Typ. Max. Unit - 135 815 995 - J J J - 200 1175 1375 - J J J Min. Typ. Max. Unit VCC = 480V, IC = 12A RG= 10, VGE= 15V, Figure 21 VCC = 480V, IC = 12A RG= 10, VGE= 15V, Tj = 125C Figure 21 VCC = 480V, IC = 12A Off voltage rise time Turn-off delay time Current fall time RG= 10, VGE= 15V, Figure 21 VCC = 480V, IC = 12A Off voltage rise time Turn-off delay time Current fall time RG= 10, VGE= 15V, Tj = 125C Figure 21 Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 12 A RG= 10 , VGE= 15 V, Figure 19 VCC = 480 V, IC = 12 A RG= 10 , VGE= 15 V, Tj = 125 C Figure 19 1. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter Test conditions VF Forward on-voltage IF = 12 A IF = 12 A, Tj = 125 C 2.3 2.0 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 12 A, VR =40 V, di/dt=100 A/s Figure 22 31 29.5 1.9 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 12 A, VR =40 V, di/dt=100 A/s, Tj = 125 C Figure 22 48.5 70.5 3 ns nC A Doc ID 13689 Rev 4 5/15 Electrical characteristics STGF19NC60SD, STGP19NC60SD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. 6/15 Doc ID 13689 Rev 4 Capacitance variations STGF19NC60SD, STGP19NC60SD Figure 8. Electrical characteristics Normalized gate threshold voltage vs temperature Figure 10. Normalized breakdown voltage vs temperature Figure 9. Collector-emitter on voltage vs collector current Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current Doc ID 13689 Rev 4 7/15 Electrical characteristics STGF19NC60SD, STGP19NC60SD Figure 14. Turn-off SOA Figure 15. Thermal impedance for TO-220 Figure 16. Thermal impedance for TO-220FP Figure 17. Forward voltage drop versus forward current IFM(A) 50 45 40 Tj=125C (maximum values) 35 30 Tj=125C (typical values) 25 20 Tj=25C (maximum values) 15 10 5 VFM(V) 0 0 Figure 18. IC vs. frequency 8/15 Doc ID 13689 Rev 4 1 2 3 4 5 6 STGF19NC60SD, STGP19NC60SD 2.2 Electrical characteristics Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C The conduction losses are: Equation 2 PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C. Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125C for switching losses are used (test conditions: VCE = 480V, VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see Note 1), while the tail of the collector current is included in the EOFF measurements. Doc ID 13689 Rev 4 9/15 Test circuits 3 STGF19NC60SD, STGP19NC60SD Test circuits Figure 19. Test circuit for inductive load switching Figure 20. Gate charge test circuit AM01504v1 Figure 21. Switching waveform AM01505v1 Figure 22. Diode recovery time waveform 90% VG IF trr 90% VCE Qrr di/dt 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 10/15 Doc ID 13689 Rev 4 AM01507v1 STGF19NC60SD, STGP19NC60SD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13689 Rev 4 11/15 Package mechanical data Table 9. STGF19NC60SD, STGP19NC60SD TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 12/15 Doc ID 13689 Rev 4 STGF19NC60SD, STGP19NC60SD Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 13689 Rev 4 13/15 Revision history 5 STGF19NC60SD, STGP19NC60SD Revision history Table 10. Document revision history Date Revision 02-Jul-2007 1 First release 13-Aug-2007 2 From target to preliminary version 18-Sep-2007 3 Added new section: Electrical characteristics (curves) 4 - - - - 05-Nov-2010 14/15 Changes Cover page has been updated Modified gate threshold voltage range on Table 4: Static Updated TO-220 mechanical data Added new package, mechanical data: TO-220FP Doc ID 13689 Rev 4 STGF19NC60SD, STGP19NC60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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