O14 Dey 3875081 OOL79b4 O [ 3875081 GE SOLID STATE O1E 17964 D Signal Transistors T29- 23 GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A Silicon Transistors Features: = Low leakage currenis = High speed switching Epoxy encapsulation with proved reifabilty excellent characteristic stability under environmental stresses, 85C @ 85% RH Low collector saturation voltages TO-92 The GE/RCA GES2221A, 22A, MPS2222A, PN2222A NPN types, and GES2906, O6A, 07, 07A, MPS2906, OGA, 07, and 07A PNP types are planar epitaxial passivated silicon tran- sistors intended for general purpose amplifiers, saturated MAXIMUM RATINGS, Absolute-Maximum Values: switching, and core applications. The GES, MPS and PN pre- fixes can be used interchangeably, characteristics for each line are similar. PNP values are negative; observe proper po- larity. These types are supplied in JEDEC TO-92 package. 2221A 2906,06A 2222A 2907,07A COLLECTOR TO EMITTER VOLTAGE WVceo) 40 -40 Vv EMITTER TO BASE VOLTAGE (Vego). .. 0. cece cee cece cece ee ener eee teen tent eneee . 5 -5 Vv COLLECTOR TO BASE VOLTAGE (Vogg)-- 10s cece cee e eee ces eteeetereetteettenneess . 78 - 80 v CONTINUOUS COLLECTOR CURRENT (Ig)... ccc een eee cece eee eee t neat en eenee os 400 - 350 mA COLLECTOR CURRENT (peak)(Iq) 2.06. e cece cece cece ee ees an eee eetnteesteeeeetes .. 800 -700 mA TOTAL POWER DISSIPATION Ta = 26C (Py) 360 360 mw TOTAL POWER DISSIPATION Tg < 25C (Pr)... eee cece cee ene ene eect nee eben eens 1000 1000 mw DERATE FACTOR, Tp > 25C oo... cece cece cece cnet eee renee te tenet eee eeeeseeceeene 3.6 3.6 mwicec DERATE FACTOR, To > 25C 20... ccc cece cece e ce cet eee n eens tyeeneensseenneteeeeees i0 7 mWicC OPERATING TEMPERATURE (Ty) .... 0-0. cece cece ene e eee been teen e ten eeeneenettenenees - 66 to +150 C STORAGE TEMPERATURE (Tog)... . 000. e eee cece eee cece cnet enna teeee sents eeeeeeeeees -65to +125 C LEAD TEMPERATURE 1h6 + 192" (1.58mm + 0.8mm) from case at 10s max. (Ty) ........2..22 062 +260 c File Number 2070 G E SOLID STATE Ol DE fp ze7saa1 OOL7965 2 Tt 3875081 GE SOLID STATE O1E 17965 D Signal Transistors GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Tg) = 25C Unless Otherwise Specified T , Zz G ast LIMITS CHARACTERISTICS SYMBOL 2221A,22A 2906,06A 2907,07A UNITS MIN. | MAX. MIN. MAX MIN. | MAX. Collector-Emitter Breakdown Voltage {ig = 10MA, Ig = 0)" VipReco 40 - -40 - -40 - Collector-Base Breakdown Voltage (lg = 10pA, Ie = 0) Viercao | 75 - -60 - - 60 - v Emitter-Base Breakdown Voltage (Ie = 10nA, Io = 0) ViBRIEBO - 5 - -5 = Collector-Cutoff Current (Vgg = 60V, Ip = 0)* leBo - 10 _ 20 _ ~50 nA (Vog = 60V, Ie = 0, Ta = 100C)* - 10 - -20 - -20 vA Collector-Emitter Saturation Voltage (Ig = 150mA, Ip = 15mA)* VcE(saty - 0.3 - 0.4 - -0.4 (ig = 500MA, ip = 5OmA} - 1 - -1.6 - - 1.6 Base-Emitter Saturation Voltage v (I = 180MA, Ip = 15mA}* Veesaty _ 1.1 - -1.3 ~ -1.3 (Ig = 500mA, Ip = 50mA)* - 2 - -2.6 - -2.6 2221A 2222A 2906,06A 2807,07A MIN, | MAX. | MIN. | MAX. | MIN, | MAX. | MIN. | MAX. | UNITS DC Forward Current Transfer Ratio (ce = 1.0V, Io = 150mMA)* 20 - 50 - - - - - ce = 10V, Ie = 0.1mA) 20 - 35 - 20 - 35 - Moe = 10V, Ig = 1.0mA) hee 25* - *50 ~_ 25 - 50 - (Voce = 10V, Io = 10mA) 35 - 75 - 35 - 75 - - (Voge = 10V, Ie = 150mA)* 40 | 120 | 100 | 300 | 40 | 120 | 100 | 300 (VcE = 10V, Ic = 500mA)* 20 | - | 30 | - { 2 | - | 30 |} Collector Capacitance : (Vog = 10V, Ie = 0,f = 1MHz) Con 8 = 8 _ 8 - 8 pF Emitter-Base Capacitance (Vep = 0.5, Io = 0, f = 1MHz) Cop - 25 - 25 - 30 - 30 Delay Time (log = 150MA, Ip, = 15mA) ty - - - - - 10 - 10 Rise Time (Icg = 150MA, lai = 15MA) t, - = - ~ - 40 - 40 Storage Time (Igg = 150mA, !qy = Ipe = 15mA) t, - - - - - 80 - 80 ns Fall Time (Igg = 150mA, Ip, = 15mA) tt - - - - - 30 - 30 Turn-On Time (Io = 150MA, Voc = 30V, Ip = 15mA) - 35 - 35 - - = - Turn-Off Time (ig = 150MA, Voc = SOV, ton Ip+ = Ipo = 15mA) | 285} |} 265 | _ - - *Pulse conditions: 300us pulse widih, 2% duty cycle. G E SOLID STATE 3875081 GE SOLID STATE Signal Transistors Ou DE ff 3875081 OO?Ibb i OIE 17966 DB GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, T 27-23 GES2221A, 22A, MPS2222A, PN2222A -a0 INPUT 79 = 502 zoe aeita PPS TUT TO OSCILLOSCOPE ul S2ns 1K RISE TIME < Sns Zin = 10MQ crete 2 | scone i? 9205-42494 Fig. 1 Delay time and rise time test circuit for pnp types (2906, O6A, 07, O7A). TO Vv; OSCILLOSCOPE +eV Zin > 100K2Q Cin < 1.4 pF te<2ps iN S PW < 200 ys RISE TIME <5 nS DUTY CYCLE <2 % +30V 9205-42696 Fig. 3 Turn-on time test circuit for npn types (2227A and 2222A). 18V <6 INPUT 1K 237 297502 PRF = 150 PPS TUT TO OSCILLOSCOPE RISE TIME < 2ns IK RISE TIME < 5ns Zin = 10 MQ -sov- a |. scons i 92CS-42495 Fig, 2Storage time and fall time test circuit for pnp types (2906, O6A, 07, O7A). VIN 30V PW > ius TO te & ty <7 us OSCILLOSCOPE Zin < 100 KR Cin $12 pF RISE TIME <5 nS 92CS- 42497 Fig. 4 Turn-off time test circuit for npn types (2221A and 2222A). TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3- Collector 70