© Semiconductor Components Industries, LLC, 2015
June, 2017 − Rev. 9 Publication Order Number:
BAV70WT1/D
1
BAV70W, SBAV70W
Dual Switching Diode
Common Cathode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltage VR100 V
Forward Current IF200 mA
Peak Forward Surge Current IFM(surge) 500 mA
Forward Surge Current
(60 Hz @ 1 cycle) IFSM 2.0 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 0.7 A
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD200
1.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 625 °C/W
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−323
CASE 419
STYLE 5
MARKING DIAGRAM
A4 MG
G
12
3
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping
ORDERING INFORMATION
BAV70WT1G SOT−323
(Pb−Free) 3,000 / Tape & Ree
l
3
CATHODE
ANODE
1
2
ANODE
A4 = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
SBAV70WT1G SOT−323
(Pb−Free) 3,000 / Tape & Ree
l
BAV70W, SBAV70W
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(I(BR) = 100 mA) V(BR) 100 V
Reverse Voltage Leakage Current (Note 3)
(VR = 100 V)
(VR = 50 V)
IR
1.0
100 mA
nA
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
715
855
1000
1250
mV
Diode Capacitance
(VR = 0 V, f = 1.0 MHz) CD 1.5 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1) trr 6.0 ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 2) VRF 1.75 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while the second diode is unbiased.
BAV70W, SBAV70W
www.onsemi.com
3
Figure 1. Recovery Time Equivalent Test Circuit
RS = 50 W
BAV70
IF
SAMPLING
OSCILLOSCOPE
RL = 50 W
trtp
t
10%
90%
VR
INPUT PULSE
+IFtrr OUTPUT PULSE
10%OF VR
100W
Figure 2.
RS = 50 W
BAV70 SAMPLING
OSCILLOSCOPE
RL = 50 W
1 KW450 W
90%
10%
t
trtp
INPUT PULSE
V
VFR
OUTPUT PULSE t
I
BAV70W, SBAV70W
www.onsemi.com
4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 3. Forward Voltage Figure 4. Leakage Current
Figure 5. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
tp, PULSE ON TIME (ms)
IFSM, FORWARD SURGE MAX CURRENT (A)
0
2
4
0.001 0.01 0.1 1 10 100 1000
6
8
10
Figure 6. Forward Surge Current
12
14
16
18
BAV70W, SBAV70W
www.onsemi.com
5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
BAV70WT1/D
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