BAV70W, SBAV70W Dual Switching Diode Common Cathode Features * S Prefix for Automotive and Other Applications Requiring Unique * www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-323 CASE 419 STYLE 5 MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mA IFM(surge) 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 2.0 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 0.7 A Peak Forward Surge Current ANODE 1 3 CATHODE 2 ANODE MARKING DIAGRAM 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A4 MG G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.6 mW/C RqJA 625 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 2 A4 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping BAV70WT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel SBAV70WT1G SOT-323 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2015 June, 2017 - Rev. 9 1 Publication Order Number: BAV70WT1/D BAV70W, SBAV70W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (I(BR) = 100 mA) Min Max 100 - - - 1.0 100 - - - - 715 855 1000 1250 - 1.5 - 6.0 - 1.75 V(BR) Reverse Voltage Leakage Current (Note 3) (VR = 100 V) (VR = 50 V) IR Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Reverse Recovery Time (IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1) trr Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 2) Unit V mA nA mV pF ns VRF V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. www.onsemi.com 2 BAV70W, SBAV70W BAV70 RS = 50 W SAMPLING OSCILLOSCOPE RL = 50 W IF tr tp t 10% +IF trr 10%OF 90% VR OUTPUT PULSE INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 450 W 1 KW RS = 50 W SAMPLING OSCILLOSCOPE RL = 50 W BAV70 I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. www.onsemi.com 3 OUTPUT PULSE t VR 100W BAV70W, SBAV70W 10 100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) TA = 150C 10 TA = 85C TA = 25C 1.0 TA = -40C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 Figure 3. Forward Voltage 18 IFSM, FORWARD SURGE MAX CURRENT (A) CD , DIODE CAPACITANCE (pF) 50 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Leakage Current 1.0 0.9 0.8 0.7 0.6 10 0 2 4 6 16 14 12 10 8 6 4 2 0 0.001 8 VR, REVERSE VOLTAGE (VOLTS) 0.01 0.1 1 10 tp, PULSE ON TIME (ms) 100 Figure 6. Forward Surge Current Figure 5. Capacitance www.onsemi.com 4 1000 BAV70W, SBAV70W PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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