Transistors NPN silicium Planar pitaxiaux NPN silicon transistors Epitaxial planar *2N 2192 *2N 2192A *2N 2193 *2N 2193 A - Amplification BF grands signaux LF farge signal amplification - Commutation 4 moyen courant Medium current switching Dissipation de puissance maximale Maximum power dissipation Prot T {w) ' 1 : as 3 M2) F-+L(1) N |---| tomblC) (1) : tease (C}(2) 25 50 100 150 200 * Dispositif recommand Pretered device Donnes principales Principal features V {a V 2N 2192,A CEO 50 V 2N 2193,A lo 1A - h {100 -300 2N 2192,A 27E 40-120 2N 2193,A (150 mA) VeEsat {0.35 V 2N 2192-2193 (150 mA) 10,25 V 2N 2192A-2193A Boitier TO -39 Case Le collecteur est reli au boitier Collector is connected to case et. Sesmseny Valeurs limites absolues d'utilisation @ tamh=25C ; Absolute ratings (limiting values) (Sauf indications contraires ) {Unless otherwise specified) Poenive 2N 2192 2N 2193 fern 2N 21928 2N 2193 A Tension collecteur-base Collector-base voltage VcBo 60 80 v Tension collecteur-metteur Collector-emitter voltage VcEo 40 50 Vv Tension metteur-base Emitter-base voltage Veso 5 8 v Courant collecteur | 1 1 A Collector current c =25e 0,8 08 Dissipation de puissance tamb= 25C (1) Prot Ww ower dissipation toase= 25C (2) 2,8 2,8 Temprature de jonction max. t 200 200 C Junction temperature J Temprature de stockage min. t 65 65 oc Storage temperature max. stg +200 +200 1970-10 1/102N 2192 * 2N 2192 A* 2N 2193 * 2N 2193 A* Caractristiques gnrales @ tamb = 25C General characteristics ( Sauf indications contraires} (Unless otherwise specified) Caractristiques statiques Static characteristics I =0 10 E - 2N 2192, Al Vos =30 V nA | =0 E 10 = 2N 2193, Veg =60 V A Courant rsiduel collecteur-base 1 =0 ( E CBO Collector-b t-off t 16 oflector-base cut-o. curren Vor =30 Vv ON 2192,A\ tamb 180C BA | 0 E 25 Vcg =60 V ZN 2193,Al tamb! 50C I =0 c 2N 2192, Vegp=3V A Courant rsiduel metteur-base 'eBO 50 nA Emitter-base cut-off current Ig = 2N 2193,B Vegz5V Ip =0 i2N 2192,A 60 Tension de claquage collecteur-base lV Vv Collector-base breskdown voltage le =100 HA ON 2193,A) (BR)CBO 80 ip =0 2N 2192,Al 40 Tension de claquage collecteur-metteur IV Vv Collector-em iter Breakdown voltage Io =25 mA 2N 2193.4 (BR)CEO 50 \ =0 2N 2192,A) 5 Tension de claquage metteur-base = ViBR )EBO Vv Emitter-base breakdown voltage le =100 pA DN 2193,Al 8 a i: = impulsions % 300us 58 < 2% ulsi 2/10* 2N 2192 * 2N 2192 A * 2N 2193 * 2N 2193 A Caractristiques gnrales @ tamh = 25C General characteristics ( Sauf indications contraires} {Unless otherwise specified) Caractristiques statiques Static characteristics ae Min.) Typ. | Max. Mia.) Type) Max. ig =0,1mA = [2N2192,A 15 Voge =10V 2N 2193,A 15 hore Iq =10mA 2N 2192,A\ 75 Voge =10V 2N 2193,A 30 lo =150 mA /2N2192,A\ 100 300 Voge =10V 2N 2193, 40 120 Valeur statique du rapport du transfert * direct du courant ( =500 mA = [2N2192,A} hoy 36 Static forward current transfer ratio c Vop=10V 2N 2193,A 20 Ip =tA 2N 2192,4 15 Voge =10V DN 2193,A 15 Ig =10mA |2N2192,A) 35 Veg z10V hore tamb 798C 12N2193,A 20 Iq =150 mA 2N 2192 0.35 Ip =15 mA 2N 2193 , Tension de saturation collecteur-metteur Voge Vv tor-emi: i fi oflector-emitter saturation voltage lo =150 mA 2N 2192 A sat 0 16 0 25 Ip =15mA = |2N2193 A Tension de saturation base-metteur Iq =150 mA Vv i3}v Base-emitter saturation voltage ip =15mA BEsat " * Impulsions ty = 300us 5 < 2% es gs : Pulsed Caractristiques dynamiques (pour petits signaux) Dynamic characteristics (for smalt signats) Frquence de transition Ic =5OmA Transition frequency Voce =10V fy 50 MHz f =20 MHz Capacit de sortie Vop=10V Output capacitance le =0 Coan 20 pF f =1MHz 3/102N 2192 * 2N 2192 A * 2N 2193 * 2N 2193 A * Caractristiques gnrales a tamb = 25C General characteristics Caractristiques de commutation Switching characteristics vl vo ay 2N 2192,A Temps de croissance Fi 1 BBO t 70 | ns Rise time igure Vv =15V r 1 RN 2193,A Vep=15V Vv, =7,5V vioe-75v. PN2192,A Retard & la dcroissance . BB r 150 | ns Storage time Figure 1 $s Vy =18V ON 2193.A\ Vep=15V . Vv, =7,5V vl, ee V DN 2192,A\ Temps de dcroissance BB: Fall rime Figure 1 te 50 ns Vy =15V ION 2193,A Veg 215 V Schma de mesure des temps de commutation Switching times test circuit Figure 1 v4 =7,5V 2N2192,A Oscilloscope v4 =15V 2N 2193, A Oscilloscope t < 6ns Z =10M2 C <11,5pF 1Vv op>}-__ y 402 1 MF 1kQ Vv I @- .@_ AAA 1 W J + 7Vv 10s - = 512 1kQ 330 pF t =20 ns t =20 ns _ Zz =s02 y4 \ Vep=-7.5V 2N2192,A Vep=15V 2N2193, A 4/10* 2N 2192 * 2N 2192 A * 2N 2193 * 2N 2193 A Caractristiques statiques Static characteristics 2N 2192 2N 2192 A a 7 0,6 ig (ma) 100 80 40 20 0 10 20 30 40 50 Vog (V) tamb Io ima) le (mA) 100 te (may 500 2N 2193 2N 2193 A a tg = 0,9 mA 0,8 80 60 Vog (v) = 26C 400 300 200 VY) 5/102N 2192 * 2N 2192 A * 2N 2193 * 2N 2193 A* Caractristiques statiques Static characteristics 2N 2192 2N 2193 2N 2192 A 2N 2193 A ws I (ma) lq (ma) Ve (V) Iq (mA) Voce ) Vog (ma) 6/10*2N 2192 (mA) 100 {ma} 500 - B= 400 *2N 2192 A *2N 2193 *2N 2193 A Caractristiques statiques Static characteristics 2N 2192 2N 2193 2N 2192 A 2N 2193 A a Ig = 14 mA 1 t 1 le (mA) 100 60 Vee (Vv) Ig ima) 7/102N 2192 * 2N 2192 A* 2N 2193 * 2N 2193 A* Caractristiques statiques Static characteristics 2N 2192 2N 2193 2N 2192A 2N 2193 A a od hoye 280 hove 175 240 150 125 160 100 120 75 50 25 0 0 0,01 0,1 1 10 100 1000 0,01 1 1 10 100 1000 Ig (mA) Ig (ma) Ip {mA} 10 Ip (mA) 20 Vce =5V VcE =5V t =259C =25 8 Vee iv) 8/10* 2N 2192 *2N 2192 A *2N 2193 *2N 2193 A Caractristiques statiques Static characteristics 4 2N 2192, 2N2193A 0) J 10 100 1000 Veesat'] Inia) ] T T TT T 2 =10 tamb = 25C / 01 ZL 2N 2192,A 2N 2193,A 7 ba r | 0,01 0) J 10 100 1000 ig(mA) 9/102N 2192 * 2N 2192 A * 2N 2193 * 2N 2193 A * Caractristiques dynamiques Dynamic characteristics leBo (A) 1 (C) Coop IPF) Ig=0 1=1MHz tamb =25 c 10/10