MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4403T NEW PRODUCT Features * * * * SOT-523 Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401T) A Ultra-Small Surface Mount Package C Available in Lead Free/RoHS Compliant Version (Note 2) B C TOP VIEW Mechanical Data B * * Case: SOT-523 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * * E G H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Terminals: Solderable per MIL-STD-202, Method 208 N J L D Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 M C Terminal Connections: See Diagram Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm Marking (See Page 2): 2T Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) Maximum Ratings B E @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30273 Rev. 6 - 2 1 of 4 www.diodes.com MMBT4403T a Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 3/4 V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 3/4 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -100mA, IC = 0 ICEX 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 3/4 3/4 3/4 300 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 3/4 -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb 3/4 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 3/4 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 3/4 Output Admittance hoe 1.0 100 mS fT 200 3/4 MHz Delay Time td 3/4 15 ns Rise Time tr 3/4 20 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT4403T-7 SOT-523 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4403T-7-F. Marking Information 2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2TYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30273 Rev. 6 - 2 2 of 4 www.diodes.com MMBT4403T 20 150 Cibo CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 30 100 50 10 5.0 Cobo 0 0 100 200 1.0 -0.1 VCE, COLLECTOR-EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve, Total Package -1.0 -10 -30 REVERSE VOLTS (V) Fig. 2 Typical Capacitance 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 300mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = 50C VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 200 0 VCE = 5V 0.9 0.8 TA = -50C 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current DS30273 Rev. 6 - 2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Base-Emitter Voltage vs. Collector Current 3 of 4 www.diodes.com MMBT4403T 1000 hFE, DC CURRENT GAIN NEW PRODUCT fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V TA = 150C TA = 25C 100 TA = -50C 10 VCE = 5V 100 1 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain vs. Collector Current DS30273 Rev. 6 - 2 4 of 4 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current MMBT4403T