TOSHIBA TLP115A TOSHIBA PHOTOCOUPLER GaAfAs IRED & PHOTO-IC TLP115A HIGH SPEED, LONG DISTANCE ISOLATED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES DIGITAL ISOLATION FOR A/D, D/A CONVERSION COMPUTER-PERIPHERAL INTERFACES GROUND LOOP ELIMINATION The TOSHIBA MINI FLAT COUPLER TLP115A is a small outline coupler, suitable for surface mount assembly. TLP115A consists of a high output power GaAfAs light emitting diode, optically coupled to an integrated high gain, high speed shielded photo detector whose output is an open collector schottky clamped transistor. The shield, which shunts capacirively coupled common noise to ground, provides a guaranteed transient immunity specification of 1000V / ps. e Input Current Thresholds : Ip5mA (Max.) e Switching Speed : 1OMBd (Typ.) Common Mode Transient Immunity : +1000V/ us (Min.) 0~70C : 2500Vrms (Min.) : UL1577, File No. E67349 Guaranteed Performance Over Temp. : e Isolation Voltage e UL Recognized SCHEMATIC Icc +O | 9 VCC 1 6 Io A a o Vo -9 A GND 3 SHIELD 4 Note. A 0.1uF bypass capacitor must be connected between pins 4 and 6. Unit in mm 6 5 4 HALA Hf 1 3 7.0+0.4 42 24lf U 3 0.5MIN. 11-402 TOSHIBA 11-4C2 Weight : 0.09 PIN CONFIGURATION (TOP VIEW) 10) | Voc te Do ' GND Ld 1 6 5 4 : ANODE : CATHODE : GND om We :Vec : VQ (OUTPUT) TRUTH TABLE (Positive Logic) INPUT OUTPUT H L L H 2001-06-01TOSHIBA TLP115A MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING UNIT Forward Current (Note 1) Ip 20 mA a Pulse Forward Current (Note 2)| Ipp 40 mA BI Peak Transient Forward r 1 Current (Note 3) FPT Reverse Voltage VR 5 ge [Output Current Io 25 mA 2 Output Voltage Vo 7 oO f= |Supply Voltage BS (1 Minute Maximum) Voc 7 A Output Power Dissipation Po 40 mW Operating Temperature Range Topr 40~85 C Storage Temperature Range Tstg 55~125 C Lead Solder Temperature (10 sec.) T gol 260 C Isolation Voltage (AC, 1 min,, RH<60%, Note 4)|_ PYS 2500 Vrms (Note 1) Derate 0.86mA/C above 70C. (Note 2) 50% duty cycle, lms pulse width. Derate 0.72mA/C above 70C. (Note 3) Pulse width=1ys, 300pps. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. TYP. | MAX. | UNIT Input Voltage, Low Level VEL 3 0 1.0 Vv Input Current, High Level Ira 6.3 8 20 mA Supply Voltage Vcc 4.5 5.5 Vv Fan Out N _ _ 8 _ (TTL Load, Each Channel) Operating Temperature Topr 0 70 C 2001-06-01TOSHIBA TLP115A ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Ta=Q~70C, Vcc = 4.5~5.5V, Ve, = 1.0V) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX.| UNIT Forward Voltage VE Ip=10mA, Ta=25C 1.2 1.4 1.7 Vv Forward Voltage _ Temperature Coefficient VF/Ta |Ip=10mA - 2) = fmv/C Reverse Current IR VR=3V, Ta=25C 10 | pA Capacitance Between np ore Terminals CT VpF=0, f=1MHz, Ta=25C 30 | pF VFH=1.0, Vo =5.5V = = 250 High Level Output Voltage Io F 0 wh VF=1.0, Vo=5.5V, Ta=25C 0.5 10 Ip=5mA Low Level Output Current VOL Io. =13mA (Sinking) 0.4 | 0.6 Vv H Level OutputL Level Ip, =138mA (Sinking) Output Input Current IFH VoL=0.6V _ _ 5 | mA High Level Supply Current IccH | Vcoc=5.5V, Ip=0 _ 7 15 | mA Low Level Supply Current ICCL Vcc=5.5V, Ir=10mA 12 19 | mA Input-Output Vg=3540V, t=5s Insulation Leakage Current Ig Ta=25C (Note 4) | | 100) HA . . R.H.= 60%, Vg=500V DC 10 14 Isolation Resistance Rg Ta 25C (Note 4) 5x10'} 10 = Q Stray Capacitance Cy Vg=0, f =1MHz _ os | pF Between Input to Output Ta=25C (Note 4) * All typical values are VOGQ=5V, Ta=25C. 3 2001-06-01TOSHIBA TLP115A SWITCHING CHARACTERISTICS (Vec = 5V, Ta = 25C) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN. | TYP. | MAX.} UNIT CUIT Propagation Delay Time Ip=0-7.5mA (HL) HL 1 | cy=15pF, Rp =3500 | 60 | 120 | ns Propagation Delay Time Ip=7.5-0mA (L>H) tpLH 1 | Gp =15pF, Ry. =3500 | 60 | 120] ns Output Rise Fall Time Ry, =350, Cy,=15pF (10-90%) tr tf 2 |Ip=027.5mA | 30 ) | ns Common Mode Transient . . Ip=OmA, VoM=400V,-p Immunity at High Output CMy 2 VoumIny=2V, RL =3500 1000] |V/us Level Common Mode Transient Ip=7.5mA, Vey=400V>-p Immunity at Low Output CMy, 2 | VO(MAX)=9.8V, 1000} |V/us Level Ry, =3500 (Note 4) Device considered a two-terminal device : Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. (Note 5) The Voc supply voltage to each TLP115A isolator must be bypassed by 0.14eF capacitor. This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to package Vcc and GND pins of each device. (Note 6) Maximum electrostatic discharge voltage for any pins : 180V(C=200pF, R=0) 4 2001-06-01TOSHIBA TLP115A TEST CIRCUIT 1 : Switching Time Test Circuit >O = s Hal Te, et, \ s fom. PULSE INPUT o~{_| ; VeoLP a= 36 F 3.751 PW=100s ' i oD y DUTY RATIO=1/10 + De] cpt ou O te tr 1 I T OUTPUT _ 5V Ip MONITOR 95 Gnp LI | MONITOR 4.5V 5 Vo qo 1.5V 0.5V toHL tot = VOL Cy, is approximately 15pF which includes probe and stray wiring capacitance. TEST CIRCUIT 2 : Common Mode Transient Immunity Test Circuit : =TTa Veoo=5v j 90% OY JF. x} 1S Vom / oH ; VooLPa= 5 10% ie Sef Lol |* Lov = D+] L o Vo ty tf Ls CLT OUTPUT GNDK MONITOR Vc I ~OaA) J (n+ CM F= ov WO PULSE GENERATOR a 0.8V Z9 =500 Vo /\ v (Ip=10mA) OL _ 320(V) _ 820(V) CMH= ty (us)? L te(us) Cy, is approximately 15pF which includes probe and stray wiring capacitance. 5 2001-06-01TOSHIBA TLP115A QUTPUT VOLTAGE Vo () FORWARD CURRENT Ip (mA) OUTPUT VOLTAGE Vo (V) IF VF AVEF/ ATa Ip 100 Zo ES < Ta=70C & 10 Se a fe) 1 oF a5 5 oF a 0.1 85 tify Se ea Bo 2d 0.01 1.0 12 1.4 1.6 1.8 2.0 0.1 0305 1 305 10 30 FORWARD VOLTAGE VF (V) FORWARD CURRENT Ip (mA) Vo IF IoH Ta 10 (A) RL=3500 RL =1kQ, Ry, =4kQ, 0.5 IoH 0.3 HIGH LEVEL OUTPUT CURRENT 0.1 0.05 0 1 2 3 4 5 6 20 0 20 40 60 80 FORWARD CURRENT Ip (mA) AMBIENT TEMPERATURE Ta (C) Vo - IF VOL Ta Veco =5v Rp =3500 - Rp =4kQ. Ta=70C Ta=0C 0 1 2 3 4 5 6 , 0 20 40 60 80 LOW LEVEL OUTPUT VOLTAGE Vor, (V) FORWARD CURRENT Ip (mA) AMBIENT TEMPERATURE Ta (C) 6 2001-06-01TOSHIBA TLP115A (ns) PROPAGATION DELAY TIME tyr, tet RISE, FALL TIME ty, t (ns) tpHL tpLH IF Ry, =350Q Ta=25C aA gn ton coco tol 10 12 14 16 18 20 FORWARD CURRENT Ip (mA) tr, tf Ta RL =350Q, 1kQ. Ip=16mA 4kQ, Voc=5V ton con the 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) PROPAGATION DELAY TIME tpn, tony (ns) tpHL, tpn Ta 300 260 220 120 80 40 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) 2001-06-01TOSHIBA TLP115A RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 8 2001-06-01