1N5060TAP - Vishay Semiconductors

1N5059, 1N5060, 1N5061, 1N5062

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 1Document Number: 86000

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Standard Avalanche Sinterglass Diode

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg

FEATURES

• Glass passivated junction

• Hermetically sealed axial-leaded glass

envelope

• Controlled avalanche characteristics

• Low reverse current

• High surge current loading

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Rectification diode, general purpose



949539

click logo to get started

Available

Models

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY

1N5062 1N5062TR 5000 per 10" tape and reel 25 000

1N5062 1N5062TAP 5000 per ammopack 25 000

PARTS TABLE

PART TYPE DIFFERENTIATION PACKAGE

1N5059 VR = 200 V; IF(AV) = 2 A SOD-57

1N5060 VR = 400 V; IF(AV) = 2 A SOD-57

1N5061 VR = 600 V; IF(AV) = 2 A SOD-57

1N5062 VR = 800 V; IF(AV) = 2 A SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Reverse voltage = repetitive peak reverse voltage See electrical characteristics

1N5059 VR = VRRM 200 V

1N5060 VR = VRRM 400 V

1N5061 VR = VRRM 600 V

1N5062 VR = VRRM 800 V

Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A

Average forward current TthJA = 45 K/W, Tamb = 50 °C IF(AV) 2A

TthJA = 100 K/W, Tamb = 75 °C IF(AV) 0.8 A

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) I(BR)R = 1 A, inductive load ER20 mJ

Junction and storage temperature range Tj = Tstg -55 to +175 °C

1N5059, 1N5060, 1N5061, 1N5062

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 2Document Number: 86000

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 2 - Max. Reverse Current vs. Junction Temperature

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Max. Forward Current vs. Forward Voltage

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W

On PC board with spacing 25 mm RthJA 100 K/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT

Forward voltage IF = 1 A VF--1V

IF = 2.5 A VF- - 1.15 V

Reverse current

VR = VRRM IR--1μA

VR = VRRM, Tj = 100 °C IR- - 10 μA

VR = VRRM, Tj = 150 °C IR- - 100 μA

Breakdown voltage IR = 100 μA

1N5059 V(BR)R 225 - 1600 V

1N5060 V(BR)R 450 - 1600 V

1N5061 V(BR)R 650 - 1600 V

1N5062 V(BR)R 900 - 1600 V

Diode capacitance VR = 0 V, f = 1 MHz CD-40-pF

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --4μs

120

160

200

25 50 75 100 125 150 175

- Junction Temperature ( °C)

15764

RRM

P - Reverse Power Dissipation ( mW )

160 K/W

100 K/W

45 K/W

thJA

1N5062

1N5061

1N5060

1N5059

0.1

100

1000

15765

RRM

I - Reverse Current ( µA)

25 50 75 100 125 150 175

- Junction Temperature ( °C)

15763_1

RRM

half sinewave

thJA

=4 5 K/W

l =10 mm

thJA

= 100 K/W

PCB :d=2 5m m

02 04 06 08 0 100 120 140 160 180

amb

- Ambient T emperature (°C)

0.0

1.0

1.5

2.0

2.5

3.0

I- Average Forward Current (A)

FA V

0.5

I - Forward Current(A)

0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

- Forward Voltage(V)

15762

=25°C

=175°C

0.01

0.1

100

0.001

1N5059, 1N5060, 1N5061, 1N5062

www.vishay.com Vishay Semiconductors

Rev. 1.7, 20-Feb-18 3Document Number: 86000

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

0.1 1 10 100

VR- Reverse Voltage ( V )

15766

C - Diode Capacitance ( pF )

f=1MHz

20543

3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

0.82 (0.032) max.

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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1N5062GP-E3/1 1N5059GP-E3/1 1N5061GP-E3/1 1N5059GP-E3/54 1N5059GPHE3/54 1N5060GP-E3/54

1N5060GP-E3/73 1N5060GPHE3/54 1N5060GPHE3/73 1N5061GP-E3/54 1N5061GPHE3/54 1N5062GPHE3/54

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1N5059TR