CALOGIC CORP CORPORATION calogic 7-27-27 2N3921 /2N3922 FEATURES ABSOLUTE MAXIMUM RATINGS Low Drain Current (Ta = 25C unless otherwise noted) High Output Impedance Gate-Source or Gate-Drain Voltage (Note 1) ......... -50V Matched Vas, AVas and gis Gate Current(Note 1) 2.2.0... cece eee eee ees 50mA Storage Temperature Range ............. 65C to +200C PIN CONFIGURATION Operating Temperature Range vente eeeeee -55C ta +200C Load Temperature (Soldering, 10sec) ............, +300C Total Power Dissipation ........... 0.0.00 cece eee 300mW Derate above 25C 0.0... cece eae 1.7mW/C NOTE: Stresses above those listed under "Absolute Maximum To.71 Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range se Ue Vek 2N3921 Hermetic TO-71 55C to +200C 6037 o 2N3922 ~- Hermetic TO-71 -55G to +200C X2N3922 Sorted Chip Carriers -55C to +200C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS 1 nA Vas = -30V, Vos = 0 less Gate Reverse Current 1 pA Ta = 100C BVpco Drain-Gate Breakdown Voltage 50 Ib = 1pA, Is =0 Vesio) | Gate-Source Cutoff Voltage 3 v Vos = 10V, lo = 1nA Ves Gate-Source Voltage -0.2 -2.7 Vos = 10V, Ip = 100nA -250 pA Voe = 10V, Ip = 700pA la Gate Operating Current -25 nA | Ta = 100C loss Saturation Drain Current (Note 1) 1 10 mA Vos = 10V, Ves = 0 fs Common-Source Forward Transconductance (Note 2) 1500 7600 pS f= 1kHz Gos Common-Source Output Conductance 35 Vos = 10V, Ves = 0 Cus Common-Source Input Capacitance (Note 3) 18 pF f= 1MHz Crss Common-Source Reverse Transfer Capacitance (Note 3) 6 dts Common-Source Forward Transconductance 1500 Vpe = 10V, ps Ip = 7OOWA f= 1kHz Goss Common-Source Output Conductance 20 ~ oe Eh 7 _o | f= 1kHz, NF Spot Noise Figure (Note 3) 2 dB Vos = 10V, Vas = 0 Re = Imega 3-9 HBE D MM 1844322 0000294 O MCcC Monolithic Dual N-Channel JFET General Purpose Amplifier ec6ENC / LZGENZ " CALOGIC CORP HSE D MM 14443ee OO00eIS 2 MBCGC N 5 2N3921 /2N3922 C al C , CORPORATION 3 x 7 N MATCHING CHARACTERISTICS (Ta = 25C unless otherwise specified) 7-2 7- a 2N3921 2N3922 SYMBOL PARAMETER UNITS TEST CONDITIONS MIN MAX MIN MAX | Vas1 -Vase | Differential Gate-Source Voltage 5 5 mv A]Vas1 Vese | Gate-Source Differential Voltage , Voa=10V, | T,=0C AT Change with Temperature 10 25 KVPC | ip = 700A | Ta = 100C Qis1/Qfs2 Transconductance Ratio 0.95 1.0 0.95 1.0 f = 1kHz NOTES: 1. Per transistor. 2. Pulse test duration = 2 ms. 3. For design reference only, not 100% tested. 3-10