Semiconductor Group 1 03/99
BUZ 323
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
GDS
Type VDS IDRDS(on)Package Ordering Code
BUZ 323 400 V 15 A 0.3
Ω
TO-218 AA C67078-S3127-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C
ID 15
A
Pulsed drain current
TC = 25 °C
IDpuls 60
Avalanche current,limited by Tjmax IAR 15
Avalanche energy,periodic limited by Tjmax EAR 18 mJ
Avalanche energy, single pulse
ID = 15 A, VDD = 50 V, RGS = 25
Ω
L = 6.14 mH, Tj = 25 °C
EAS
790
Gate source voltage VGS
±
20 V
Power dissipation
TC = 25 °C
Ptot 170
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC
≤
0.74 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 2 03/99
BUZ 323
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 400 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V, Tj = 25 °C
VDS = 400 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 9.5 A
RDS(on) - 0.25 0.3
Ω
Semiconductor Group 3 03/99
BUZ 323
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 9.5 A
gfs 8 14.5 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 2300 3000
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 320 480
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 120 180
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
td(on)
- 40 65
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
tr
- 75 115
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
td(off)
- 270 350
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
tf
- 130 170
Semiconductor Group 4 03/99
BUZ 323
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 15
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 60
Inverse diode forward voltage
VGS = 0 V, IF = 30 A
VSD - 1.1 1.5
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr - 145 -
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr - 7.8 -
µC
5 03/99
Semiconductor Group
BUZ 323
Drain current
ID =
ƒ
(TC)
parameter: VGS
≥
10 V
0 20 40 60 80 100 120 °C 160
TC
0
2
4
6
8
10
12
A
16
ID
Power dissipation
Ptot =
ƒ
(TC)
0 20 40 60 80 100 120 °C 160
TC
0
20
40
60
80
100
120
140
W
180
Ptot
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0.01, TC = 25°C
-1
10
0
10
1
10
2
10
A
ID
10 0 10 1 10 2 10 3
V
VDS
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 1000.0ns
Transient thermal impedance
Zth JC =
ƒ
(tp)
parameter: D = tp / T
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 03/99
BUZ 323
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs
0 4 8 12 16 V24
VDS
0
4
8
12
16
20
24
28
A
34
ID
VGS [V]
a
a 4.0
b
b 4.5
c
c 5.0
dd 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
Ptot = 170W
l 20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: VGS
0 4 8 12 16 20 A26
ID
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ω
0.9
RDS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
0 1 2 3 4 5 6 7 8 V10
VGS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
A
15
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS
≥
2 x ID x RDS(on)max
0 2 4 6 8 10 12 A15
ID
0
2
4
6
8
10
12
14
S
18
gfs
7 03/99
Semiconductor Group
BUZ 323
Gate threshold voltage
VGS (th) =
ƒ
(Tj)
parameter: VGS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160
Tj
2%
typ
98%
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 9.5 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ω
1.3
RDS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V40
VDS
-2
10
-1
10
0
10
1
10
nF
C
Crss
Coss
Ciss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Semiconductor Group 8 03/99
BUZ 323
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 15 A, VDD = 50 V
RGS = 25
Ω
, L = 6.14 mH
20 40 60 80 100 120 °C 160
Tj
0
100
200
300
400
500
600
mJ
800
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 22 A
0 20 40 60 80 100 120 140 nC 170
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V0,8
DS max
V0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
360
370
380
390
400
410
420
430
440
450
460
V
480
V(BR)DSS
Semiconductor Group 903/99
BUZ 323
Package Outlines
TO-218 AA
Dimension in mm
