Si8630/31/35 Data Sheet
Low-Power Triple-Channel Digital Isolators
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering sub-
stantial data rate, propagation delay, power, size, reliability, and external BOM advan-
tages over legacy isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges and throughout device service life for
ease of design and highly uniform performance. All device versions have Schmitt trigger
inputs for high noise immunity and only require VDD bypass capacitors.
Data rates up to 150 Mbps are supported, and all devices achieve propagation delays of
less than 10 ns. Ordering options include a choice of isolation ratings (2.5, 3.75 and 5
kV) and a selectable fail-safe operating mode to control the default output state during
power loss. All products are safety certified by UL, CSA, VDE, and CQC, and products
in wide-body packages support reinforced insulation withstanding up to 5 kVRMS.
Automotive Grade is available for certain part numbers. These products are built using
automotive-specific flows at all steps in the manufacturing process to ensure the robust-
ness and low defectivity required for automotive applications.
KEY FEATURES
High-speed operation
DC to 150 Mbps
No start-up initialization required
Wide Operating Supply Voltage
2.5–5.5 V
Up to 5000 VRMS isolation
Reinforced VDE 0884-10, 10 kV surge-
capable (Si862xxT)
60-year life at rated working voltage
High electromagnetic immunity
Ultra low power (typical)
5 V Operation
1.6 mA per channel at 1 Mbps
5.5 mA per channel at 100 Mbps
2.5 V Operation
1.5 mA per channel at 1 Mbps
3.5 mA per channel at 100 Mbps
Schmitt trigger inputs
Selectable fail-safe mode
Default high or low output (ordering
option)
Precise timing (typical)
10 ns propagation delay
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
5 ns minimum pulse width
Transient Immunity 50 kV/µs
AEC-Q100 qualification
Wide temperature range
–40 to 125 °C
RoHS-compliant packages
SOIC-16 wide body
SOIC-16 narrow body
Automotive-grade OPNs available
AIAG compliant PPAP documentation
support
IMDS and CAMDS listing support
Industrial Applications
Industrial automation systems
Medical electronics
Isolated switch mode supplies
Isolated ADC, DAC
Motor control
Power inverters
Communications systems
Safety Regulatory Approvals
UL 1577 recognized
Up to 5000 VRMS for 1 minute
CSA component notice 5A approval
IEC 60950-1, 61010-1, 60601-1 (re-
inforced insulation)
VDE certification conformity
Si862xxT options certified to rein-
forced VDE 0884-10
All other options certified to IEC
60747-5-5 and reinforced 60950-1
CQC certification approval
GB4943.1
Automotive Applications
On-board chargers
Battery management systems
Charging stations
Traction inverters
Hybrid Electric Vehicles
Battery Electric Vehicles
silabs.com | Building a more connected world. Rev. 1.83
1. Ordering Guide
Industrial and Automotive Grade OPNs
Industrial-grade devices (part numbers having an “-I” in their suffix) are built using well-controlled, high-quality manufacturing flows to
ensure robustness and reliability. Qualifications are compliant with JEDEC, and defect reduction methodologies are used throughout
definition, design, evaluation, qualification, and mass production steps.
Automotive-grade devices (part numbers having an “-A” in their suffix) are built using automotive-specific flows at all steps in the manu-
facturing process to ensure robustness and low defectivity. These devices are supported with AIAG-compliant Production Part Approval
Process (PPAP) documentation, and feature International Material Data System (IMDS) and China Automotive Material Data System
(CAMDS) listing. Qualifications are compliant with AEC-Q100, and a zero-defect methodology is maintained throughout definition, de-
sign, evaluation, qualification, and mass production steps.
Table 1.1. Ordering Guide for Valid OPNs1, 2, 4
Ordering Part Number
(OPN)
Automotive OPNs5, 6 Number
of Inputs
VDD1
Side
Number
of Inputs
VDD2
Side
Max Data
Rate
(Mbps)
Default
Output
State
Isolation
Rating
(kVrms)
Package
Si8630BB-B-IS Si8630BB-AS 3 0 150 Low 2.5 WB SOIC-16
Si8630BB-B-IS1 Si8630BB-AS1 3 0 150 Low 2.5 NB SOIC-16
Si8630BC-B-IS1 Si8630BC-AS1 3 0 150 Low 3.75 NB SOIC-16
Si8630EC-B-IS1 Si8630EC-AS1 3 0 150 High 3.75 NB SOIC-16
Si8630BD-B-IS Si8630BD-AS 3 0 150 Low 5.0 WB SOIC-16
Si8630ED-B-IS Si8630ED-AS 3 0 150 High 5.0 WB SOIC-16
Si8631BB-B-IS Si8631BB-AS 2 1 150 Low 2.5 WB SOIC-16
Si8631BB-B-IS1 Si8631BB-AS1 2 1 150 Low 2.5 NB SOIC-16
Si8631BC-B-IS1 Si8631BC-AS1 2 1 150 Low 3.75 NB SOIC-16
Si8631EC-B-IS1 Si8631EC-AS1 2 1 150 High 3.75 NB SOIC-16
Si8631BD-B-IS Si8631BD-AS 2 1 150 Low 5.0 WB SOIC-16
Si8631ED-B-IS Si8631ED-AS 2 1 150 High 5.0 WB SOIC-16
Si8635BB-B-IS Si8635BB-AS 3 0 150 Low 2.5 WB SOIC-16
Si8635BC-B-IS1 Si8635BC-AS1 3 0 150 Low 3.75 NB SOIC-16
Si8635BD-B-IS Si8635BD-AS 3 0 150 Low 5.0 WB SOIC-16
Product Options with Reinforced VDE 0884-10 Rating with 10 kV Surge Capability
Si8630BT-IS Si8630BT-AS 3 0 150 Low 5.0 WB SOIC-16
Si8630ET-IS Si8630ET-AS 3 0 150 High 5.0 WB SOIC-16
Si8631BT-IS Si8631BT-AS 2 1 150 Low 5.0 WB SOIC-16
Si8631ET-IS Si8631ET-AS 2 1 150 High 5.0 WB SOIC-16
Si8635BT-IS Si8635BT-AS 3 0 150 Low 5.0 WB SOIC-16
Si8635ET-IS Si8635ET-AS 3 0 150 High 5.0 WB SOIC-16
Si8630/31/35 Data Sheet
Ordering Guide
silabs.com | Building a more connected world. Rev. 1.83 | 2
Ordering Part Number
(OPN)
Automotive OPNs5, 6 Number
of Inputs
VDD1
Side
Number
of Inputs
VDD2
Side
Max Data
Rate
(Mbps)
Default
Output
State
Isolation
Rating
(kVrms)
Package
Note:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.
4. The temperature ranges is –40 to +125 °C.
5. Automotive-Grade devices (with an "–A" suffix) are identical in construction materials, topside marking, and electrical parameters
to their Industrial-Grade (with an "–I" suffix) version counterparts. Automotive-Grade products are produced utilizing full automo-
tive process flows and additional statistical process controls throughout the manufacturing flow. The Automotive-Grade part num-
ber is included on shipping labels.
6. In the top markings of each device, the Manufacturing Code represented by either “RTTTTT” or “TTTTTT” contains as its first
character a letter in the range N through Z to indicate Automotive-Grade.
Si8630/31/35 Data Sheet
Ordering Guide
silabs.com | Building a more connected world. Rev. 1.83 | 3
Table of Contents
1. Ordering Guide ..............................
2
2. System Overview ..............................5
2.1 Theory of Operation ............................5
2.2 Eye Diagram...............................6
3. Device Operation ..............................7
3.1 Device Startup ..............................9
3.2 Undervoltage Lockout ...........................9
3.3 Layout Recommendations ..........................9
3.3.1 Supply Bypass ............................9
3.3.2 Output Pin Termination..........................9
3.4 Fail-Safe Operating Mode ..........................9
3.5 Typical Performance Characteristis .......................10
4. Electrical Specifications ..........................11
5. Pin Descriptions .............................26
6. Package Outline: 16-Pin Wide Body SOIC.................... 27
7. Land Pattern: 16-Pin Wide Body SOIC .....................29
8. Package Outline: 16-Pin Narrow Body SOIC ...................30
9. Land Pattern: 16-Pin Narrow Body SOIC ....................32
10. Top Marking: 16-Pin Wide Body SOIC..................... 33
11. Top Marking: 16-Pin Narrow Body SOIC ....................34
12. Revision History............................. 35
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2. System Overview
2.1 Theory of Operation
The operation of an Si863x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This
simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified
block diagram for a single Si863x channel is shown in the figure below.
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the trans-
mitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that de-
codes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and improved immunity
to magnetic fields. See the following figure for more details.
Figure 2.2. Modulation Scheme
Si8630/31/35 Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.83 | 5
2.2 Eye Diagram
The figure below illustrates an eye diagram taken on an Si8630. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern
Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8630 were captured on an oscilloscope. The re-
sults illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that 2 ns pulse width
distortion and 350 ps peak jitter were exhibited.
Figure 2.3. Eye Diagram
Si8630/31/35 Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.83 | 6
3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Figure 3.1 Device Behavior during Normal Operation on
page 9, where UVLO+ and UVLO– are the respective positive-going and negative-going thresholds. Refer to the following tables to
determine outputs when power supply (VDD) is not present and for logic conditions when enable pins are used.
Table 3.1. Si86xx Logic Operation
VI Input1, 2 EN Input1, 2, 3, 4 VDDI State1, 5, 6 VDDO State1, 5, 6 VO Output1, 2 Comments
H H or NC P P H Enabled, normal operation.
L H or NC P P L
X7L P P Hi-Z8Disabled.
X7H or NC UP P L9
H9
Upon transition of VDDI from unpowered to
powered, VO returns to the same state as
VI in less than 1 µs.
X7L UP P Hi-Z8Disabled.
X7X7P UP Undetermined Upon transition of VDDO from unpowered
to powered, VO returns to the same state
as VI within 1 µs, if EN is in either the H or
NC state. Upon transition of VDDO from
unpowered to powered, VO returns to Hi-Z
within 1 µs if EN is L.
Note:
1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and output terminals. EN is the
enable control input located on the same output side.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
3. It is recommended that the enable inputs be connected to an external logic high or low level when the Si86xx is operating in noisy
environments.
4. No Connect (NC) replaces EN1 on Si8630/35. No Connect replaces EN2 on the Si8635. No Connects are not internally connec-
ted and can be left floating, tied to VDD, or tied to GND.
5. “Powered” state (P) is defined as 2.5 V < VDD < 5.5 V.
6. “Unpowered” state (UP) is defined as VDD = 0 V.
7. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
8. When using the enable pin (EN) function, the output pin state is driven into a high-impedance state when the EN pin is disabled
(EN = 0).
9. See Ordering Guide for details. This is the selectable fail-safe operating mode (ordering option). Some devices have default out-
put state = H, and some have default output state = L, depending on the ordering part number (OPN). For default high devices,
the data channels have pull-ups on inputs/outputs. For default low devices, the data channels have pull-downs on inputs/outputs.
Si8630/31/35 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.83 | 7
Table 3.2. Enable Input Truth
Part Number EN11, 2EN21, 2 Operation
Si8630 H Outputs B1, B2, B3 are enabled and follow input state.
L Outputs B1, B2, B3 are disabled and in high impedance state.3
Si8631 H X Output A3 enabled and follows the input state.
L X Output A3 disabled and in high impedance state.3
X H Outputs B1, B2 are enabled and follow the input state.
X L Outputs B1, B2 are disabled and in high impedance state.3
Si8635 Outputs B1, B2, B3 are enabled and follow the input state.
Note:
1. Enable inputs EN1 and EN2 can be used for multiplexing, for clock sync, or other output control. These inputs are internally
pulled-up to local VDD allowing them to be connected to an external logic level (high or low) or left floating. To minimize noise
coupling, do not connect circuit traces to EN1 or EN2 if they are left floating. If EN1, EN2 are unused, it is recommended they be
connected to an external logic level, especially if the Si86xx is operating in a noisy environment.
2. X = not applicable; H = Logic High; L = Logic Low.
3. When using the enable pin (EN) function, the output pin state is driven into a high-impedance state when the EN pin is disabled
(EN = 0).
Si8630/31/35 Data Sheet
Device Operation
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3.1 Device Startup
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following this, the outputs follow
the states of inputs.
3.2 Undervoltage Lockout
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or when VDD is below its
specified operating circuits range. Both Side A and Side B each have their own undervoltage lockout monitors. Each side can enter or
exit UVLO independently. For example, Side A unconditionally enters UVLO when VDD1 falls below VDD1(UVLO–) and exits UVLO when
VDD1 rises above VDD1(UVLO+). Side B operates the same as Side A with respect to its VDD2 supply.
Figure 3.1. Device Behavior during Normal Operation
3.3 Layout Recommendations
To ensure safety in the end-user application, high-voltage circuits (i.e., circuits with >30 VAC) must be physically separated from the
safety extra-low-voltage circuits (SELV is a circuit with <30 VAC) by a certain distance (creepage/clearance). If a component, such as a
digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and also provide a sufficiently large
high-voltage breakdown protection rating (commonly referred to as working voltage protection). Table 4.6 Insulation and Safety-Related
Specifications on page 22 and Table 4.8 IEC 60747-5-5 Insulation Characteristics for Si86xxxx 1 on page 23 detail the working volt-
age and creepage/clearance capabilities of the Si86xx. These tables also detail the component standards (UL1577, IEC60747, CSA
5A), which are readily accepted by certification bodies to provide proof for end-system specifications requirements. Refer to the end-
system specification (61010-1, 60950-1, 60601-1, etc.) requirements before starting any design that uses a digital isolator.
3.3.1 Supply Bypass
The Si863x family requires a 0.1 µF bypass capacitor between VDD1 and GND1 and VDD2 and GND2. The capacitor should be placed
as close as possible to the package. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series
with the inputs and outputs if the system is excessively noisy.
3.3.2 Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of the on-
chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will
be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
3.4 Fail-Safe Operating Mode
Si86xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input supply is unpowered)
can either be a logic high or logic low when the output supply is powered. See Table 3.1 Si86xx Logic Operation on page 7 and
1. Ordering Guide for more information.
Si8630/31/35 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.83 | 9
3.5 Typical Performance Characteristis
The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to 4. Electrical
Specifications for actual specification limits.
Figure 3.2. Si8630/35 Typical VDD1 Supply Current vs. Data
Rate 5, 3.3, and 2.5 V Operation Figure 3.3. Si8630/35 Typical VDD2 Supply Current vs. Data
Rate 5, 3.3, and 2.5 V Operation (15 pF Load)
Figure 3.4. Si8631 Typical VDD1 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation Figure 3.5. Si8631 Typical VDD2 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation (15 pF Load)
Figure 3.6. Propagation Delay vs. Temperature (5.0 V Data)
Si8630/31/35 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.83 | 10
4. Electrical Specifications
Table 4.1. Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Ambient Operating Temperature 1 TA–40 25 125 1 °C
Supply Voltage VDD1 2.5 5.5 V
VDD2 2.5 5.5 V
Note:
1. The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply
voltage.
Table 4.2. Electrical Characteristics 1
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis VHYS 0.38 0.44 0.50 V
High Level Input Voltage VIH 2.0 V
Low Level Input Voltage VIL 0.8 V
High Level Output Voltage VOH loh = –4 mA VDD1, VDD2 – 0.4 4.8 V
Low Level Output Voltage VOL lol = 4 mA 0.2 0.4 V
Input Leakage Current
Si863xxA/B/C/D
Si863xxT
IL
±10
±15
µA
Output Impedance 2ZO 50 Ω
Enable Input Current
Si863xxA/B/C/D
Si863xxT
IENH, IENL VENx = VIH or VIL
2.0
10.0
µA
DC Supply Current (All Inputs 0 V or at Supply)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
mA
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 11
Parameter Symbol Test Condition Min Typ Max Unit
Si8631Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
mA
1 Mbps Supply Current (All Inputs = 500 kHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
2.2
3.9
3.1
mA
Si8631Bx, Ex
VDD1
VDD2
2.7
2.6
3.8
3.6
mA
10 Mbps Supply Current (All Inputs = 5 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
3.1
3.9
4.3
mA
Si8631Bx, Ex
VDD1
VDD2
3.0
3.1
4.2
4.4
mA
100 Mbps Supply Current (All Inputs = 50 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
13.2
3.9
17.8
mA
Si8631Bx, Ex
VDD1
VDD2
6.6
9.9
8.8
13.4
mA
Timing Characteristics
Si863xBx, Ex
Maximum Data Rate 0 150 Mbps
Minimum Pulse Width 5.0 ns
Propagation Delay tPHL, tPLH See Figure 4.2 Propagation
Delay Timing on page 14
5.0 8.0 13 ns
Pulse Width Distortion
|tPLH – tPHL|
PWD
See Figure 4.2 Propagation
Delay Timing on page 14 0.2 4.5 ns
Propagation Delay Skew 3 tPSK(P-P) 2.0 4.5 ns
Channel-Channel Skew tPSK 0.4 2.5 ns
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 12
Parameter Symbol Test Condition Min Typ Max Unit
All Models
Output Rise Time tr
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Output Fall Time tf
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Peak Eye Diagram Jitter tJIT(PK) See Figure 2.3 Eye Diagram
on page 6
350 ps
Common Mode Transient Immunity
Si86xxxB/C/D
Si86xxxT
CMTI
VI = VDD or 0 V
VCM = 1500 V
See Figure 4.3 Common-
Mode Transient Immunity Test
Circuit on page 14
35
60
50
100
kV/µs
Enable to Data Valid ten1 See Figure 4.1 ENABLE Tim-
ing Diagram on page 14
6.0 11 ns
Enable to Data Tri-State ten2 See Figure 4.1 ENABLE Tim-
ing Diagram on page 14
8.0 12 ns
Input power loss to valid default output tSD See Figure 3.1 Device Behav-
ior during Normal Operation
on page 9
8.0 12 ns
Start-up Time 4 tSU 15 40 µs
Note:
1. VDD1 = 5 V ±10%; VDD2 = 5 V ±10%, TA = –40 to 125 °C
2. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled-impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
4. Start-up time is the time period from the application of power to the appearance of valid data at the output.
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 13
Figure 4.1. ENABLE Timing Diagram
Figure 4.2. Propagation Delay Timing
Figure 4.3. Common-Mode Transient Immunity Test Circuit
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 14
Table 4.3. Electrical Characteristics 1
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis VHYS 0.38 0.44 0.50 V
High Level Input Voltage VIH 2.0 V
Low Level Input Voltage VIL 0.8 V
High Level Output Voltage VOH loh = –4 mA VDD1, VDD2 – 0.4 3.1 V
Low Level Output Voltage VOL lol = 4 mA 0.2 0.4 V
Input Leakage Current
Si863xxA/B/C/D
Si863xxT
IL
±10
±15
µA
Output Impedance 2ZO 50 Ω
Enable Input Current
Si863xxA/B/C/D
Si863xxT
IENH, IENL VENx = VIH or VIL
2.0
10.0
µA
DC Supply Current (All Inputs 0 V or at Supply)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
mA
Si8631Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
mA
1 Mbps Supply Current (All Inputs = 500 kHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
2.2
3.9
3.1
mA
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 15
Parameter Symbol Test Condition Min Typ Max Unit
Si8631Bx, Ex
VDD1
VDD2
2.7
2.6
3.8
3.6
mA
10 Mbps Supply Current (All Inputs = 5 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
2.6
3.9
3.6
mA
Si8631Bx, Ex
VDD1
VDD2
2.8
2.6
4.0
3.9
mA
100 Mbps Supply Current (All Inputs = 50 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
9.3
3.9
12.5
mA
Si8631Bx, Ex
VDD1
VDD2
5.2
7.3
7.0
9.8
mA
Timing Characteristics
Si863xBx, Ex
Maximum Data Rate 0 150 Mbps
Minimum Pulse Width 5.0 ns
Propagation Delay tPHL, tPLH See Figure 4.2 Propagation
Delay Timing on page 14
5.0 8.0 13 ns
Pulse Width Distortion
|tPLH – tPHL|
PWD See Figure 4.2 Propagation
Delay Timing on page 14 0.2 4.5 ns
Propagation Delay Skew 3 tPSK(P-P) 2.0 4.5 ns
Channel-Channel Skew tPSK 0.4 2.5 ns
All Models
Output Rise Time tr
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Output Fall Time tf
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Peak Eye Diagram Jitter tJIT(PK) See Figure 2.3 Eye Diagram
on page 6
350 ps
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 16
Parameter Symbol Test Condition Min Typ Max Unit
Common Mode Transient Immunity
Si86xxxB/C/D
Si86xxxT
CMTI
VI = VDD or 0 V
VCM = 1500 V
See Figure 4.3 Common-
Mode Transient Immunity Test
Circuit on page 14
35
60
50
100
kV/µs
Enable to Data Valid ten1 See Figure 4.1 ENABLE Tim-
ing Diagram on page 14
6.0 11 ns
Enable to Data Tri-State ten2 See Figure 4.1 ENABLE Tim-
ing Diagram on page 14
8.0 12 ns
Input power loss to valid default output tSD See Figure 3.1 Device Behav-
ior during Normal Operation
on page 9
8.0 12 ns
Start-up Time 4 tSU 15 40 µs
Note:
1. VDD1 = 3.3 V ±10%; VDD2 = 3.3 V ±10%, TA = –40 to 125 °C
2. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled-impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
4. Start-up time is the time period from the application of power to the appearance of valid data at the output.
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 17
Table 4.4. Electrical Characteristics 1
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis VHYS 0.38 0.44 0.50 V
High Level Input Voltage VIH 2.0 V
Low Level Input Voltage VIL 0.8 V
High Level Output Voltage VOH loh = –4 mA VDD1, VDD2 – 0.4 2.3 V
Low Level Output Voltage VOL lol = 4 mA 0.2 0.4 V
Input Leakage Current
Si863xxA/B/C/D
Si863xxT
IL
±10
±15
µA
Output Impedance 2ZO 50 Ω
Enable Input Current
Si863xxA/B/C/D
Si863xxT
IENH, IENL VENx = VIH or VIL
2.0
10.0
µA
DC Supply Current (All Inputs 0 V or at Supply)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
mA
Si8631Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
mA
1 Mbps Supply Current (All Inputs = 500 kHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
2.2
3.9
3.1
mA
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 18
Parameter Symbol Test Condition Min Typ Max Unit
Si8631Bx, Ex
VDD1
VDD2
2.7
2.6
3.8
3.6
mA
10 Mbps Supply Current (All Inputs = 5 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
2.4
3.9
3.3
mA
Si8631Bx, Ex
VDD1
VDD2
2.8
2.7
3.9
3.7
mA
100 Mbps Supply Current (All Inputs = 50 MHz Square Wave, CI = 15 pF on All Outputs)
Si8630Bx, Ex, Si8635Bx
VDD1
VDD2
2.8
7.5
3.9
10.1
mA
Si8631Bx, Ex
VDD1
VDD2
4.5
6.1
6.1
8.2
mA
Timing Characteristics
Si863xBx, Ex
Maximum Data Rate 0 150 Mbps
Minimum Pulse Width 5.0 ns
Propagation Delay tPHL, tPLH See Figure 4.2 Propagation
Delay Timing on page 14
5.0 8.0 14 ns
Pulse Width Distortion
|tPLH -tPHL|
PWD See Figure 4.2 Propagation
Delay Timing on page 14 0.2 5.0 ns
Propagation Delay Skew 3 tPSK(P-P) 2.0 5.0 ns
Channel-Channel Skew tPSK 0.4 2.5 ns
All Models
Output Rise Time tr
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Output Fall Time tf
CL = 15 pF
See Figure 4.2 Propagation
Delay Timing on page 14
2.5 4.0 ns
Peak Eye Diagram Jitter tJIT(PK) See Figure 2.3 Eye Diagram
on page 6
350 ps
Si8630/31/35 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.83 | 19