IRFD9110 Data Sheet July 1999 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET File Number 2215.3 Features * 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. * rDS(ON) = 1.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Symbol Formerly developmental type TA17541. D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP G BRAND IRFD9110 S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-39 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFD9110 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD9110 -100 -100 -0.7 -3.0 20 1.0 0.008 190 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS -100 - - V VGS = VDS, ID = -250A -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 A Drain to Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V, (Figure 9) Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time A - A - - 100 nA - 1.000 1.200 VDS 50V, ID = -0.6A, (Figure 11) 0.59 0.88 - S tf Total Gate Charge (Gate to Source + Gate to Drain) -250 ID = -0.3A, VGS = -10V, (Figures 8) td(OFF) Fall Time - gfs tr Turn-Off Delay Time VGS = 20V -0.7 rDS(ON) td(ON) Rise Time VDS > ID(ON) x rDS(ON)MAX, VGS = -10V, (Figure 6) Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDD = 0.5 x Rated BVDSS, ID = -0.7A, RG = 9.1, VGS =-10V, (Figures 16, 17), RL = 70 for VDSS = 50V RL = 56 for VDSS = 40V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -0.7A, VDS = 0.8V x Rated BVDSS, (Figures 13, 18, 19) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10) Internal Drain Inductance LD Measured From the Drain Lead, 2mm (0.08in) From Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 2mm (0.08in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D - 15 30 ns - 30 60 ns - 20 40 ns - 20 40 ns - 11 15 nC - 5.7 - nC - 5.3 - nC - 180 - pF - 85 - pF - 30 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W LD G LS S Thermal Resistance Junction to Ambient 4-40 RJA Typical Socket Mount IRFD9110 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) MIN TYP MAX - - -0.7 A - - -3.0 A TJ = 25oC, ISD = -0.7A, VGS = 0V, (Figure 12) - - -1.5 V trr TJ = 150oC, ISD = -0.7A, dISD/dt = 100A/s - 120 - ns QRR TJ = 150oC, ISD = -0.7A, dISD/dt = 100A/s - 6.0 - C ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode UNITS D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge6466 VSD NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. VDD = 25V, starting TJ = 25oC, L = 582mH, RG = 25, peak IAS = 0.7A. See Figures 14, 15. Typical Performance Curves Unless Otherwise Specified -1.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 -0.8 -0.6 -0.4 -0.2 0.0 0 0 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 25 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE -5 100s 1ms 1 10ms 0.1 100ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED 0.01 VGS = -10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10s -4 VGS = -9V -3 VGS = -8V -2 VGS = -7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -6V -1 DC VGS = -5V 0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-41 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS -50 IRFD9110 Typical Performance Curves Unless Otherwise Specified (Continued) -5 ID, DRAIN CURRENT (A) ID(ON), ON-STATE DRAIN CURRENT (A) -12.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V -4 VGS = -9V -3 VGS = -8V -2 VGS = -7V VGS = -6V -1 VGS = -5V VDS > ID(ON) x rDS(ON) PULSE DURATION = 80s -9.6 DUTY CYCLE = 0.5% MAX -7.2 TJ = 125oC TJ = -55oC -2.4 0 0 -4 -2 -8 -6 TJ = 25oC -4.8 0 -10 0 VDS, DRAIN TO SOURCE VOLTAGE (V) DRAIN TO SOURCE ON RESISTANCE () -8 -10 2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2s PULSE TEST 4 3 VGS = -10V VGS = -20V 1 -1 0 -6 FIGURE 6. TRANSFER CHARACTERISTICS 5 0 -4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. SATURATION CHARACTERISTICS 2 -2 -2 VGS = -10V, ID = -0.3A PULSE DURATION = 80s 2.0 DUTY CYCLE = 0.5% MAX 1.5 1.0 0.5 0 -40 -3 ID, DRAIN CURRENT (A) 0 40 120 80 TJ , JUNCTION TEMPERATURE (oC) 160 NOTE: Heating effect of 2s is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD ID = 250A 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 300 CISS 200 COSS 100 CRSS 0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-42 0 0 -10 -40 -30 -20 VDS, DRAIN TO SOURCE VOLTAGE (V) -50 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD9110 Typical Performance Curves PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.0 -100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = -55oC TJ = 25oC ISD, DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 2.5 Unless Otherwise Specified (Continued) TJ = 125oC 1.5 1.0 0.5 -10 TJ = 150oC TJ = 25oC -1.0 -0.1 0 0 -1.2 -2.4 -3.6 -4.8 -6.0 -0.4 -0.6 ID , DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE (V) 5 -0.8 -1.4 -1.0 -1.2 -1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE ID = -0.7A 0 -5 -10 VDS = -20V VDS = -50V VDS = -80V -15 -20 0 2 4 6 8 Qg(TOT) , TOTAL GATE CHARGE (nC) 10 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS 0 - RG + 0V VGS DUT tP IAS VDD IAS VDS tP 0.01 FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-43 VDD BVDSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS -1.8 IRFD9110 Test Circuits and Waveforms (Continued) tON tOFF td(OFF) td(ON) tf tr 0 RL - DUT VGS VDS VDD RG + 10% 10% VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 16. SWITCHING TIME TEST CIRCUIT -VDS (ISOLATED SUPPLY) CURRENT REGULATOR FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 0 VDS DUT 12V BATTERY 0.2F 50k 0.3F Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR 0 +VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT IG(REF) FIGURE 19. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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