Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 24
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 15
IDM Pulsed Drain Current À96
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á310 mJ
IAR Avalanche Current À24 A
EAR Repetitive Avalanche Energy À30 mJ
dv/dt Peak Diode Recovery dv/dt Â3.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5 sec.)
Weight 3.3 (Typical) g
oC
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
08/04/05
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SMD-2
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNA7360SE 100K Rads (Si) 0.20Ω 24A
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nLight Weight
For footnotes refer to the last page
IRHNA7360SE
400V, N-CHANNEL
RAD Hard
™
HEXFET
®
TECHNOLOGY
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
PD-91398B
IRHNA7360SE Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.51 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.20 VGS = 12V, ID = 15A
Resistance — — 0.21 VGS = 12V, ID = 24A
VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 4.0 — — S ( )V
DS > 15V, IDS = 15A Ã
IDSS Zero Gate Voltage Drain Current — — 50 VDS= 320V ,VGS=0V
— — 250 VDS = 320V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 250 VGS =12V, ID = 24A
Qgs Gate-to-Source Charge — — 60 nC VDS = 200V
Qgd Gate-to-Drain (‘Miller’) Charge — — 120
td(on) Turn-On Delay Time — — 35 VDD =200V, ID =24A,
trRise Time — — 100 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 120
tfFall Time — — 100
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 4000 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1000 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 460 —
nA
Ω
Ã
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.42
RthJ-PCB Junction-to-PC board — 1.6 — Soldered to a 2 inch sq. clad PC board
°C/W
Measured from the center of drain
pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 24
ISM Pulse Source Current (Body Diode) À—— 96
VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 24A, VGS = 0V Ã
trr Reverse Recovery Time — — 750 nS Tj = 25°C, IF = 24A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 14 µCV
DD ≤ 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Ω
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Pre-Irradiation IRHNA7360SE
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter 100K Rads (Si) Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage 400 — VVGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V
IDSS Zero Gate Voltage Drain Current — 50 µA VDS= 320V, VGS=0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) — 0.20 ΩVGS = 12V, ID = 15A
RDS(on) Static Drain-to-Source
On-State Resistance (SMD-2) — 0.20 Ω VGS = 12V, ID = 15A
VSD Diode Forward Voltage — 1.4 V VGS = 0V, ID = 24A
Ion LET Energy Range VDS (V)
MeV/(mg/cm2)) (MeV) (µm) @VGS= 0V @VGS= -5V @VGS= -10V @VGS= -15V @VGS= -20V
Cu 28 285 43 325 325 325 325 325
Br 36.8 305 39 325 325 325 325 320
0
100
200
300
400
0 -5 -10 -15 -20 -25
VGS
VDS
Cu
Br
IRHNA7360SE Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1 1 10 100
20us PULSE WIDTH
T = 150 C
Jo
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
5678910 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
23A
24A
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Pre-Irradiation IRHNA7360SE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
040 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
23A
V = 80V
DS
V = 200V
DS
V = 320V
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
24A
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRHNA7360SE Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
5
10
15
20
25
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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Pre-Irradiation IRHNA7360SE
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
25 50 75 100 125 150
0
100
200
300
400
500
600
E , Single Pulse Avalanche Energy (mJ)
AS
ID
TOP
BOTTOM
10.7A
15.2A
24A
Starting TJ, Junction Temperature (°C)
IRHNA7360SE Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
320volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 1.1mH
Peak IL = 24A, VGS = 12V
 I
SD ≤ 24A, di/dt ≤120A/µs,
VDD ≤ 400V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions —SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2005
