PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS(on) = 26.5m G Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 36A S D2Pak IRF540ZS TO-220AB IRF540Z TO-262 IRF540ZL Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM 140 PD @TC = 25C Power Dissipation 92 W 0.61 20 W/C V 83 mJ 36 Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) d c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range 120 A mJ -55 to + 175 C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance i Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) www.irf.com h See Fig.12a, 12b, 15, 16 g i A 25 c j i 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units --- 1.64 C/W 0.50 --- --- 62 --- 40 1 10/31/03 IRF540Z/S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.093 --- RDS(on) Static Drain-to-Source On-Resistance --- 21 26.5 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 gfs IDSS Forward Transconductance 36 --- Drain-to-Source Leakage Current --- --- --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 42 63 Qgs Gate-to-Source Charge --- 9.7 --- Qgd Gate-to-Drain ("Miller") Charge --- 15 --- VGS = 10V td(on) Turn-On Delay Time --- 15 --- VDD = 50V tr Rise Time --- 51 --- td(off) Turn-Off Delay Time --- 43 --- tf Fall Time --- 39 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package and center of die contact VGS = 0V IGSS --- V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 22A e V VDS = VGS, ID = 250A --- V VDS = 25V, ID = 22A 20 A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V ID = 22A nC VDS = 80V e ID = 22A ns nH RG = 12 e D G S Ciss Input Capacitance --- 1770 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 100 --- Coss Output Capacitance --- 730 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 110 --- VGS = 0V, VDS = 80V, = 1.0MHz Coss eff. Effective Output Capacitance --- 170 --- VGS = 0V, VDS = 0V to 80V VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 36 ISM (Body Diode) Pulsed Source Current --- --- 140 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time --- 33 50 ns Qrr Reverse Recovery Charge --- 41 62 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V e TJ = 25C, IF = 22A, VDD = 50V di/dt = 100A/s e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF540Z/S/L 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 1 1 0.1 1 10 100 0.1 0 VDS, Drain-to-Source Voltage (V) 10 100 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current () 1 100 T J = 175C 10 T J = 25C VDS = 25V 60s PULSE WIDTH 1 4.0 5.0 6.0 7.0 T J = 175C 60 40 T J = 25C 20 VDS = 10V 380s PULSE WIDTH 0 0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 20 30 40 50 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF540Z/S/L 3000 20 2500 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 2000 Ciss 1500 1000 500 Coss ID= 22A VDS= 80V VDS= 50V VDS= 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 0 1 10 0 100 10 20 30 40 50 60 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 100 T J = 175C 10.0 1.0 T J = 25C 10 1 VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 100sec 1msec Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF540Z/S/L 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain Current (A) 40 30 20 10 ID = 22A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF540Z/S/L DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 180 15V ID 8.3A 14A BOTTOM 20A 160 TOP 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform L VGS(th) Gate threshold Voltage (V) QGS 3.5 ID = 250A 3.0 2.5 2.0 VCC DUT 0 1K 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF540Z/S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 20A EAR , Avalanche Energy (mJ) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF540Z/S/L D.U.T Driver Gate Drive + + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF540Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE www.irf.com PART NUMBER DAT E CODE 9 IRF540Z/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 PART NUMBER F530S DAT E CODE www.irf.com IRF540Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C 11 IRF540Z/S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.46mH This value determined from sample failure population. 100% RG = 25, IAS = 20A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . Repetitive rating; pulse width limited by TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/