KE C SEMICONDUCTOR MMBTA63/64 KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATINGS (Ta=25) Sar ETERS 9340.) CHARACTERISTIC SYMBOL | RATING | UNIT 5 [momo Collector-Base MMBTA63/64 V 30 Vv D 0450 15/-006 Voltage S) CBO E | 2.40+0.30/-0.20 G 1.90 Collector-Emitt naan Voltage MMBTA63/64 Veus ~30 Vv T 31540 10/-005 K 0.00 0.10 Emitter-Base Voltage Vepo -10 V 2 bo i _ N 1.00+0.20/-0.10 Collector Current Ic -500 mA eb Sd Nw 4 P 7 Collector Power Dissipation Pe 350 mW od wt Junction Temperature Tj 150 Cc 1. EMITTER 2. BASE Storage Temperature Range Tstg -59~ 150 Cc 3. COLLECTOR SOT23 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter __ 4 _ _ Breakdown Voltage Vers Ic=-0.lmA 30 Vv Collector Cut-off Current Icrno Ven=-30V - - -0.1 HA Emitter Cut-off Current TERo Ven=-l0V - - -0.1 LA MMBTA63 5,000 - - her) Tc=-1l0mA, Ver=-5V MMBTA64 10,000 - - DC Current Gain MMBTA63 10,000 - - hye(2) Ic=-100mA, Vcr=-oV MMBTA64 20,000 - - Collector Emitter MMBTA63/64 | Veussa) | Ic=-100mA, Iy=-0.1mA - - 15 V Saturation Voltage Base Emitter MMBTA63/64 | Vas | Te=-100mA, Ver=-5V - - 20 | Vv Voltage Current Gain 5 Ic=-10mA, f=100MHz - _ _ Bandwith Product MMBT.A63/64 fr Vcr=-5V 125 MHz * Pulse Test : Pulse Width<300uS, Duty Cycle<2% MARK SPEC Marking H Lot No. TYPE MMBTA63 | MMBTA64 7 MARK AGX AFX Type Name |] Ai |X 1998. 6. 15 Revision No : 3 KEC 1/2 MMBTA63/64 1998. 6. 15 Revision No : 3 KEC 2/2