Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
Replacement for SSM2017
DESCRIPTION
The INA217 is a low-noise, low-distortion, monolithic instru-
mentation amplifier. Current-feedback circuitry allows the
INA217 to achieve wide bandwidth and excellent dynamic
response over a wide range of gain. The INA217 is ideal for
low-level audio signals such as balanced low-impedance
microphones. Many industrial, instrumentation, and medical
applications also benefit from its low noise and wide band-
width.
Unique distortion cancellation circuitry reduces distortion to
extremely low levels, even in high gain. The INA217 provides
near-theoretical noise performance for 200Ω source imped-
ance. The INA217 features differential input, low noise, and
low distortion that provides superior performance in profes-
sional microphone amplifier applications.
The INA217 features wide supply voltage, excellent output
voltage swing, and high output current drive, making it an
optimal candidate for use in high-level audio stages.
The INA217 is available in the same DIP-8 and SOL-16 wide
body packages and pinouts as the SSM2017. For a smaller
package, see the INA163 in SO-14 narrow. The INA217 is
specified over the temperature range of –40°C to +85°C.
APPLICATIONS
● PROFESSIONAL MICROPHONE PREAMPS
● MOVING-COIL TRANSDUCER AMPLIFIERS
● DIFFERENTIAL RECEIVERS
● BRIDGE TRANSDUCER AMPLIFIERS
FEATURES
●LOW NOISE: 1.3nV/√Hz at 1kHz
●LOW THD+N: 0.004% at 1kHz, G = 100
●WIDE BANDWIDTH: 800kHz at G = 100
●WIDE SUPPLY RANGE: ±4.5V to ±18V
●HIGH CMR: > 100dB
●GAIN SET WITH EXTERNAL RESISTOR
●DIP-8 AND SOL-16 WIDEBODY PACKAGES
INA217
SBOS247B – JUNE 2002 – REVISED FEBRUARY 2005
www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2002-2005, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
INA217
INA217
A1
A2
A3
6kΩ6kΩ
6
45
2
1
8
3
6kΩ6kΩ
VIN–
RG1
VIN+
RG2
7
V–
V+
REF
INA217
G = 1 + 10kΩ
RG
5kΩ
5kΩVOUT
All trademarks are the property of their respective owners.
INA217
2SBOS247B
www.ti.com
PACKAGE PACKAGE
PRODUCT PACKAGE-LEAD DESIGNATOR MARKING
INA217 SOL-16 DW INA217
INA217 DIP-8 P INA217
NOTES: (1) For the most current package and ordering information, see the
Package Option Addendum at the end of this document, or see the TI website
at www.ti.com.
Supply Voltage, V+ to V–.................................................................. ±18V
Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V
Current(2) .................................................... 10mA
Output Short-Circuit(3) .............................................................. Continuous
Operating Temperature ..................................................–55°C to +125°C
Storage Temperature .....................................................–55°C to +150°C
Junction Temperature.................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. (2) Input terminals are diode-clamped to the power-supply
rails. Input signals that can swing more than 0.5V beyond the supply rails
should be current limited to 10mA or less. (3) Short-circuit to ground, one
amplifier per package.
ABSOLUTE MAXIMUM RATINGS(1)
PIN CONFIGURATIONS
Top View
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
NC
RG
2
NC
V+
NC
V
OUT
REF
NC
NC
RG
1
NC
V
IN
–
V
IN
+
NC
V–
NC
SOL-16
NC = No Internal Connection
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
RG2
V+
VOUT
REF
RG1
VIN–
VIN+
V–
DIP-8
8
7
6
5
1
2
3
4
PACKAGE/ORDERING INFORMATION(1)
INA217 3
SBOS247B www.ti.com
INA217
PARAMETER CONDITIONS MIN TYP MAX UNITS
GAIN EQUATION G = 1 + 10k/RG
Range 1 to 10000 V/V
Gain Error, G = 1 ±0.1 ±0.25 %
G = 10 ±0.2 ±0.7 %
G = 100 ±0.2 %
G = 1000 ±0.5 %
Gain Temp Drift Coefficient, G = 1 ±3±10 ppm/°C
G > 10 ±40 ±100 ppm/°C
Nonlinearity, G = 1 ±0.0003 % of FS
G = 100 ±0.0006 % of FS
INPUT STAGE NOISE
Voltage Noise RSOURCE = 0Ω
fO = 1kHz 1.3 nV/
√Hz
fO = 100Hz 1.5 nV/
√Hz
fO = 10Hz 3.5 nV/
√Hz
Current Noise
fO = 1kHz 0.8 pA/
√Hz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1kHz 90 nV/
√Hz
INPUT OFFSET VOLTAGE
Input Offset Voltage VCM = VOUT = 0V 50 + 2000/G 250 + 5000/G µV
vs Temperature TA = TMIN to TMAX 1 + 20/G µV/°C
vs Power Supply VS = ±4.5V to ±18V 1 + 50/G 3 + 200/G µV/V
INPUT VOLTAGE RANGE
Common-Mode Voltage Range VIN+ – VIN– = 0V (V+) – 4 (V+) – 3V
VIN+ – VIN– = 0V (V–) + 4 (V–) + 3 V
Common-Mode Rejection, G = 1 VCM = ±11V, RSRC = 0Ω70 80 dB
G = 100 100 116 dB
INPUT BIAS CURRENT
Initial Bias Current 212µA
vs Temperature 10 nA/°C
Initial Offset Current 0.1 1 µA
vs Temperature 0.5 nA/°C
INPUT IMPEDANCE Differential 60 2MΩ pF
Common-Mode 60 2MΩ pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1 3.4 MHz
G = 100 800 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1kHz G = 100 0.004 %
Settling Time, 0.1% G = 100, 10V Step 2 µs
0.01% G = 100, 10V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage RL to GND (V+) – 2 (V+) – 1.8 V
(V–) + 2 (V–) + 1.8 V
Load Capacitance Stability 1000 pF
Short-Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±15 V
Voltage Range ±4.5 ±18 V
Current, Quiescent IO = 0mA ±10 ±12 mA
TEMPERATURE RANGE
Specification –40 +85 °C
Operating –40 +125 °C
Thermal Resistance
DIP-8
θ
JA +85 °C/W
SOL-16 +90 °C/W
NOTE: (1) Gain accuracy is a function of external RG.
ELECTRICAL CHARACTERISTICS: VS = ±15V
Boldface limits apply over the specified temperature range, TA = –40°C to +85°C.
TA = +25°C, RL = 2kΩ, VS = ±15V, unless otherwise noted.
INA217
4SBOS247B
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
GAIN vs FREQUENCY
Gain (dB)
70
60
50
40
30
20
10
0
–10
–20
Frequency (Hz)
10k 100k 1M 10M
G = 1000
G = 100
G = 10
G = 1
CURRENT NOISE SPECTRAL DENSITY
10.0
Current Noise Density (pA/ Hz)
1 10 100 1k 10k
Frequency (Hz)
0.1
1
CMR vs FREQUENCY
Input Referred CMR (dB)
140
120
100
80
60
40
20
0
Frequency (Hz)
10 1M
100 1k 10k 100k
G = 1000
G = 100
G = 10
G = 1
POWER-SUPPLY REJECTION
vs FREQUENCY
Power-Supply Rejection (dB)
140
120
100
80
60
40
20
0
Frequency (Hz)
11M10 100 1k 10k 100k
G = 10
G = 100, 1000
G = 1
0.1
0.01
0.001
0.0001
THD+N (%)
THD+N vs FREQUENCY
Frequency (Hz)
20 100 1k 10k 20k
V
O
= 7Vrms
R
L
= 10kΩ
G = 10
G = 1
G = 100
G = 1000
NOISE VOLTAGE (RTI) vs FREQUENCY
Frequency (Hz)
10 100 1k 10k
1k
100
10
1
G = 500 G = 1000
G = 100
G = 10
G = 1
Noise (RTI) (nV/√Hz)
INA217 5
SBOS247B www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
SETTLING TIME vs GAIN
Settling Time (µs)
Gain
1 10 100 1000
10
8
6
4
2
0
20V Step
0.01%
0.1%
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
(V+) – 2
(V+) – 4
(V+) – 6
(V–) + 6
(V–) + 4
(V–) + 2
V–0 102030405060
Output Current (mA)
Output Voltage to Rail (V)
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
20mV/div
2.5µs/div
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
20mV/div
10µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
5V/div
2.5µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
5V/div
2.5µs/div
INA217
6SBOS247B
www.ti.com
FIGURE 2. Input Stabilization Network.
V+
V–
V
O
2
1
8
35
4
6
7
V
IN
–
V
IN
+
INA217
47Ω
47Ω
1.2µH
1.2µH
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for operation.
Power supplies should be bypassed with 0.1µF tantalum
capacitors near the device pins. The output Reference (pin 5)
should be a low-impedance connection. Resistance of a few
ohms in series with this connection will degrade the com-
mon-mode rejection of the INA217.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in Figure 1.
The two internal 5kΩ feedback resistors are laser-trimmed to
5kΩ within approximately ±0.2%. The gain equation for the
INA217 is:
GRG
=+110 000,
The temperature coefficient of the internal 5kΩ resistors is
approximately ±25ppm/°C. Accuracy and TCR of the exter-
nal RG will also contribute to gain error and temperature drift.
These effects can be inferred from the gain equation. Make
a short, direct connection to the gain set resistor, RG. Avoid
running output signals near these sensitive input nodes.
NOISE PERFORMANCE
The INA217 provides very low noise with low-source imped-
ance. Its 1.3nV/
√Hz
voltage noise delivers near-theoretical
noise performance with a source impedance of 200Ω. The
input stage design used to achieve this low noise results in
FIGURE 1. Basic Circuit Connections.
relatively high input bias current and input bias current noise.
As a result, the INA217 may not provide the best noise
performance with a source impedance greater than 10kΩ.
For source impedance greater than 10kΩ, other instrumen-
tation amplifiers may provide improved noise performance.
INPUT CONSIDERATIONS
Very low source impedance (less than 10Ω) can cause the
INA217 to oscillate. This depends on circuit layout, signal
source, and input cable characteristics. An input network
consisting of a small inductor and resistor, as shown in
Figure 2, can greatly reduce any tendency to oscillate. This
is especially useful if a variety of input sources are to be
connected to the INA217. Although not shown in other
figures, this network can be used as needed with all applica-
tions shown.
A1
A2
A3
6kΩ6kΩ
6
5
4
7
2
1
8
3
6kΩ6kΩ
V
IN
–
V
IN
+
R
G
V+
V–
V+
V–
INA217
G = 1 + 10000
R
G
5kΩ
5kΩV
OUT
V
O
Sometimes Shown in
Simplified Form: NOTE: (1) NC = No Connection.
REF
0.1µF
0.1µF
R
G
INA217
GAIN R
G
(V/V) (dB) (Ω)
10NC
(1)
2 6 10000
5 14 2500
10 20 1111
20 26 526
50 34 204
100 40 101
200 46 50
500 54 20
1000 60 10
2000 66 5
V
IN
–
V
IN
+
INA217 7
SBOS247B www.ti.com
FIGURE 3. Offset Voltage Adjustment Circuit.
OFFSET VOLTAGE TRIM
A variable voltage applied to pin 5, as shown in Figure 3, can
be used to adjust the output offset voltage. A voltage applied
to pin 5 is summed with the output signal. An op amp
connected as a buffer is used to provide a low impedance at
pin 5 to assure good common-mode rejection.
INA217
V+
V–
VOV+
150Ω
10kΩ150Ω
100µA
100µA
2
1
8
RG
35
7
4
6
V–
OPA237
MICROPHONE AMPLIFIER
Figure 4 shows a typical circuit for a professional microphone
input amplifier. R1 and R2 provide a current path for conven-
tional 48V phantom power source for a remotely located
microphone. An optional switch allows phantom power to be
disabled. C1 and C2 block the phantom power voltage from
the INA217 input circuitry. Non-polarized capacitors should
be used for C1 and C2 if phantom power is to be disabled. For
additional input protection against ESD and hot-plugging,
four IN4148 diodes may be connected from the input to
supply lines.
R4 and R5 provide a path for input bias current of the INA217.
Input offset current (typically 100nA) creates a DC differential
input voltage that will produce an output offset voltage. This
is generally the dominant source of output offset voltage in
this application. With a maximum gain of 1000 (60dB), the
output offset voltage can be several volts. This may be
entirely acceptable if the output is AC-coupled into the
subsequent stage. An alternate technique is shown in Figure 4.
An inexpensive FET-input op amp in a feedback loop drives
the DC output voltage to 0V. A2 is not in the audio signal path
and does not affect signal quality.
Gain is set with a variable resistor, R7, in series with R6.
R6 determines the maximum gain. The total resistance,
R6 + R7, determines the lowest gain. A special reverse-log
taper potentiometer for R7 can be used to create a linear
change (in dB) with rotation.
R5
2.2kΩ
R6(2)
8Ω
R7(3)
1.6kΩ
A1
INA217
+47µF
R3
47kΩ
R2
6.8kΩ
R1
6.8kΩ
Phantom Power
+48V
+
+
R4
2.2kΩ
C1(1)
47µF
60V
C2(1)
47µF
60V
A2
OPA137
0.1µF
+15V
0.1µF
0.1µF1MΩ
VO
–15V
Optional DC
output control loop.
6
7
5
4
1
2
3
Female XLR
Connector
NOTES: (1) Use non-polar capacitors if phantom power is to be
turned off. (2) R6 sets maximum gain. (3) R7 sets minimum gain.
(4) Optional IN4148 prevents damage due to ESD and hot-plugging.
+15V
–15V
IN4148(4)
+15V
–15V
IN4148(4)
FIGURE 4. Phantom-Powered Microphone Preamplifier.
PACKAGE OPTION ADDENDUM
www.ti.com 6-Jan-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
INA217AIDWR ACTIVE SOIC DW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA217AIDWRE4 ACTIVE SOIC DW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA217AIDWT ACTIVE SOIC DW 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA217AIDWTE4 ACTIVE SOIC DW 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA217AIP ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type
INA217AIPG4 ACTIVE PDIP P 8 50 Green (RoHS
& no Sb/Br) CU NIPDAU N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 6-Jan-2012
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA217AIDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1
INA217AIDWT SOIC DW 16 250 180.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA217AIDWR SOIC DW 16 2000 367.0 367.0 38.0
INA217AIDWT SOIC DW 16 250 184.0 184.0 50.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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