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©2010 Fairchild Semiconductor Corporation
FDMS0312AS Rev.C1
FDMS0312AS N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25°C 18 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V500μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.5 3.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25°C -4 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18 A 4.25.0
mΩVGS = 4.5 V, ID = 16 A5.46.2
VGS = 10 V, ID = 18 A, TJ = 125°C 5.3 6.8
gFS Forward Transconductance VDS = 5 V, ID = 18 A92S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1MHz
1365 1815 pF
Coss Output Capacitance 550 730 pF
Crss Reverse Transfer Capacitance 70 105 pF
RgGate Resistance 0.5 2.5 Ω
td(on) Turn-On Delay Time VDD = 15 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
10 19 ns
trRise Time 2.3 10 ns
td(off) Turn-Off Delay Time 25 40 ns
tfFall Time 612ns
QgTotal Gate Charge VGS = 0 V to 10 VVDD = 15 V,
ID = 18 A
23 31 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V1116nC
Qgs Gate to Source Charge 3.3 nC
Qgd Gate to Drain “Miller” Charge 3.7 nC
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.63 0.8 V
VGS = 0 V, IS = 18 A (Note 2) 0.8 1.2
trr Reverse Recovery Time IF = 18 A, di/dt = 300 A/μs 23 36 ns
Qrr Reverse Recovery Charge 20 32 nC
Notes:
1. RθJA is determin ed w ith th e device mo unted on a 1 i n2 pa d 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 materi al. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 33 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper. b. 125 °C/W wh en mounted on a
minimum pad of 2 oz copper.