2N3819
N−Channel RF Amplifier
TO−92 Type Package
Description:
The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications
operating up to 450Mhz, and for analog switching requiring low capacitance.
Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified)
Drain−Gate Voltage, VDG 25V............................................................
Gate−Source Voltage, VGS −25V.........................................................
Drain Current, ID50mA.................................................................
Forward Gate Current, IGF 10 mA.........................................................
Total Device Dissipation (TA = +25C ), PD350mW.........................................
Derate Above +25C 2.8mW/C....................................................
Storage Temperature Range, TSTG −55to 150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 125C/W....................................
Thermal Resistance, Junction−to−Ambient, RthJA 35C/W...................................
Note 1. These ratings are limiting values above which the serviceability of the device may be im-
paired and are based on maximum temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1.0A, VDS = 0 25 − − V
Gate Reverse Current IGSS VGS = −15V, VDS = 0 − − 2.0 nA
Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 2.0nA − − 8.0 V
Gate−Source Voltage VDS VDS = 15V, ID = 200 −0.5 −7.5 V
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 15V, ID = 0 2.0 −20 mA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Forward Transfer Admittance yfs VDS = 15V, VGS = 0, f = 1kHz 1600 − − mhos
Output Admittance yos VDS = 15V, VGS = 0, f = 1.0KHz − − 50 mhos
Output Conductance goss VDS = 15V, VGS = 0, f = 1.0KHz − − 50 mhos
Forward Transfer Conductance gfs VDS = 15V, VGS = 0, f = 1.0KHz 2000 −6500 mhos
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0KHz − − 8.0 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz − − 4.0 pF
.021 (.445) Dia Max
D G S
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max