IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Low Gate Charge Qg Results in Simple Drive Requirement * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss Specified * Lead (Pb)-free 500 RDS(on) (Max.) () VGS = 10 V 0.37 Qg (Max.) (nC) 77 Qgs (nC) 26 Qgd (nC) 34 Configuration Single RoHS COMPLIANT D APPLICATIONS TO-247 * Switch Mode Power Supply (SMPS) * Uninterruptible Power Supply * High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G * Two Transistor Forward * Half Bridge and Full Bridge * PFC Boost S N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 C TC = 100 C SYMBOL LIMIT VDS VGS 500 30 14 8.8 56 1.6 170 14 20 200 5.0 - 55 to + 150 300d 10 1.1 ID IDM TC = 25 C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/C mJ A mJ W V/ns C lbf * in N*m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Starting TJ = 25 C, L = 1.7 mH, RG = 25 , IAS = 14 A (see fig. 12). ISD 14 A, dI/dt 510 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 www.vishay.com 1 IRFP450N, SiHFP450N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.64 UNIT C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.59 - V/C VGS(th) VDS = VGS, ID = 250 A 3.0 - 5.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = 30 V - - 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 - - 0.37 VDS = 50 V, ID = 8.4 A 7.9 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2260 - - 210 - ID = 8.4 Ab VGS = 10 V A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss VGS = 0 V Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V - 14 - VDS = 1.0 V, f = 1.0 MHz - 2410 - VDS = 400 V, f = 1.0 MHz - 59 - VDS = 0 V to 400 Vc - 110 - - - 77 ID = 14 A, VDS = 400 V, see fig. 6 and 13b - - 26 Gate-Drain Charge Qgd - - 34 Turn-On Delay Time td(on) - 20 - - 63 - - 29 - - 25 - - - 14 - - 56 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 14 A RG = 6.2 ,VGS = 10 V, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 C, IS = 14 A, VGS = 0 S Vb TJ = 25 C, IF = 14 A, dI/dt = 100 A/sb - - 1.4 V - 430 650 ns - 3.7 5.6 C Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 IRFP450N, SiHFP450N Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V I D , Drain-to-Source Current (A) 10 1 6.0V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 100 1 10 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3.0 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP I D , Drain-to-Source Current (A) TJ = 150 C 0.1 6.0 10 10 6.0V 20s PULSE WIDTH TJ = 150 C 1 1 10 10 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TOP 10.0 ID = 14A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 www.vishay.com 3 IRFP450N, SiHFP450N Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd C, Capacitance(pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss 100 10 Crss 100 ISD , Reverse Drain Current (A) 100000 1 1 10 100 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 1000 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 20 OPERATION IN THIS AREA LIMITED BY R DS(on) ID = 14A VDS = 400V VDS = 250V VDS = 100V 16 ID, Drain-to-Source Current (A) VGS , Gate-to-Source Voltage (V) V GS = 0 V 0.4 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 10msec 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 IRFP450N, SiHFP450N Vishay Siliconix 14 VGS 12 ID , Drain Current (A) RD VDS D.U.T. RG 10 + - VDD 10 V Pulse width 1 s Duty factor 0.1 % 8 Fig. 10a - Switching Time Test Circuit 6 VDS 4 90 % 2 0 25 50 75 100 125 10 % VGS 150 TC , Case Temperature ( C) td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 www.vishay.com 5 IRFP450N, SiHFP450N Vishay Siliconix VDS 15 V tp Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp A IAS 0.01 EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 300 ID 6.3A 8.9A 14A TOP 250 BOTTOM 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG VGS 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 IRFP450N, SiHFP450N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91232. Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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