The General Electric D40D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters, and many others. Features: e High free-air power dissipation e NPN complement to D41D PNP Excellent linearity Fast Switching Low collector saturation voltage (0.5V typ. @ 1.0A I<) NPN POWER TRANSISTORS COMPLEMENTARY TO THE D41D SERIES D40D Series 30 60 VOLTS 1 AMP, 6.25 WATTS ', EP - NPN COLLECTOR EMITTER CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0,360-0.410 (9.144-10.414) 125 REF. (3.175) \ | 0.128-0.132 ? (3251-3353) 0.480-0.520_ _ (12,192-13.208) I 0.285-0.315 |_|. .065-0.075 (7.237-6.001) 7 (1651-7505) Y x 45 12tREF, 4 CHAMFER (30.734) 0.080 1 0.405-0.425 | (1.270) 2 (10.287-10.798) 3 0.095-0.105 __| | le 0.170-0.190 (2.413-2.667) 0.095~0.105 (4.318-4.626) (2.415-2.667 7 0.026 yl lee ao aus (0.660) (0.483-0.660) 0.095-0.106 (2.413-2.667) [tyre |] termi | TERM.2 | TeRM.3 | TAB | [_to-202 |] emitter | BASE | COLLECTOR | COLLECTOR | maximum ratings (Ta, = 25C) (unless otherwise specified) RATING SYMBOL D40D1, 2 D40D4, 5 D40D7, 8 UNITS Collector-Emitter Voltage VcEO 30 45 ' 60 Volts Collector-Emitter Voltage VcES 45 60 75 Volts Emitter Base Voltage VEBO 5 5 5 Volts Collector Current Continuous Ic 1 1 1 A Peak(1) Icom 15 1.5 1.5 Base Current Continuous lB 5 5 5 A Total Power Dissipation @ Ta = 25C Pp 1.67 1.67 1.67 Watts @ Tc = 26C 6.25 6.25 6.25 Operating and Storage Junction Temperature Range Ty, Tstg -55 to +150 -55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Resa 75 75 75 C/W Thermal Resistance, Junction to Case Rec 20 20 20 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL +260 +260 +260 Cc (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. 375 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [symBoL | MIN | TYP | MAX | UNIT | off characteristics Collector-Emitter Sustaining Voltage D40D1,2 {| VcEO(sus) 30 Volts (Ic = 10mA) D40D4, 5 45 D40D7, 8 60 _ Collector Cutoff Current (VcE = Rated VcEo) To = 28C Ices _ _ 0.1 (Voce = Rated Vces) To = 150C _ 1.0 _ uA Emitter Cutoff Current \ _ _. 01 A (Vep = 5V) EBO . rt second breakdown [ Second Breakdown with Base Forward Biased [| FBSOA | SEE FIGURE 4 | on characteristics DC Current Gain D40D1, 4, 7 Nee 50 150 _ (Io = 100mA, VcE = 2V) D40D2, 5, 8 120 360 D40D1, 4,7 hre 10 _ _ (Io = 1A, Veg = 2V) D40D2 20 _ D40D5, 8 10 _ Collector-Emitter Saturation Voltage (Ig = 500mA, Ig = 50mA) D40D1,2,4,5 | VcE:sat) 0.5 Volts D40D7, 8 _ _ 1.0 Base-Emitter Saturation Voltage (Ic = 500mA, Ip = 50mA) VBE(sat) 1.5 Volts dynamic characteristics Collector Capacitance _ _ (Vcp = 10V, f = 1MHz) CcBo 8 pF Current-Gain Bandwidth Product (Ic = 20MA, VceE = 10V) ff 200 MHz switching characteristics Resistive Load Delay Time + Ic = 1A, Ina = =0.1A _ 25 _ ns Rise Time c= 1A, pt = pe tatty | Storage Time _ ts _ 200 _ Voc = 30V, ty = 25 usec Fall Time ce peek tf 50 (1) Pulse Test PW = 300ms Duty Cycle < 2%. Veg 2V 04002,8,8, Veg #24 b4001,4,7 Tc * COLLECTOR CURRENT - mA Ter COLLECTOR CURRENT- mA FIG. 1 FIG. 2 TYPICAL H_ VS Ic 376 SATURATION VOLTAGE - VOLTS FORWARD BIASED OUTY CYCLE = 50% 70C Te s 2000 PEAK CURRENT 1 SEC PULSE (0 wSEC PULSE tooo 100 ,SEC PULSE 1000 SEC T/iq" < SEC PULSE 1 T 928C 5 eeisar) e x 4 2 oO x o rE S wl 4 Za 8 . o we Ve MAX + 040Di,2 , ces c cesar) Voces MAX: 04004,5 Ty -25% Voes MAX: 04007,8 | ! 0; 2 4 6 810. 20 40 60 60100 Tp "COLLECTOR CURRENT mA MAXIMUM COLLECTOR TO EMITTER VOLTAGE - VOLTS FIG.3 TYPICAL SATURATION FIG.4 SAFE REGION OF OPERATION VOLTAGE CHARACTERISTICS 100 JUNCTION TO AMBIENT JUNCTION AMBIENT TAB JUNCTION TO TAB TRANSIENT THERMAL IMPEDANCE - C/WATT Voce = 20V Ig = 200 mA 1 10 100 TIME IN SECONDS FIG.5 MAXIMUM TRANSIENT THERMAL IMPEDANCE 377