BCW72LT1G, SBCW72LT1G General Purpose Transistor NPN Silicon Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318-08 STYLE 6 MAXIMUM RATINGS Symbol Value Unit Collector -Emitter Voltage Rating VCEO 45 Vdc Collector -Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2 EMITTER MARKING DIAGRAM K2 M G G 1 K2 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW72LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SBCW72LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 4 1 Publication Order Number: BCW72LT1/D BCW72LT1G, SBCW72LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 45 - - 45 - - 50 - - 5.0 - - - - - - 100 10 200 - 450 - - - 0.21 0.25 - - 0.85 - 0.6 - 0.75 - 300 - - - 4.0 - 9.0 - - - 10 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CES Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100C) ICBO Vdc Vdc Vdc Vdc nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE - Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) VBE(sat) Base -Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Cobo Input Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Cibo Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF MHz pF pF dB EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V +3.0 V 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +10.9 V 10 k -0.5 V <1.0 ns 275 10 k 0 CS < 4.0 pF* -9.1 V < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 CS < 4.0 pF* BCW72LT1G, SBCW72LT1G TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 10 mA 0.2 2.0 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k 20 50 Figure 3. Noise Voltage 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 500k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 en2 ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) 2.0 dB 200 100 50 1k IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 BCW72LT1G, SBCW72LT1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 10. Collector Characteristics 1.4 0.1 400 mA 60 Figure 9. Collector Saturation Region 0.8 IB = 500 mA 50 1.6 0.8 25C to 125C 0 *qVC for VCE(sat) - 55C to 25C -0.8 25C to 125C -1.6 qVB for VBE -2.4 0.1 100 *APPLIES for IC/IB hFE/2 Figure 11. "On" Voltages 0.2 - 55C to 25C 1.0 2.0 5.0 10 20 0.5 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 4 50 100 BCW72LT1G, SBCW72LT1G TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25C f = 100 MHz TJ = 25C f = 1.0 MHz 7.0 300 VCE = 20 V 200 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance hfe 200 @ IC = 1.0 mA 7.0 5.0 VCE = 10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE (m mhos) 10 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 20 hie , INPUT IMPEDANCE (k ) 50 Figure 14. Turn-Off Time C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn-On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 17. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 18. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) BCW72LT1G, SBCW72LT1G 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19A 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) RqJA TJ(pk) - TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k100k Figure 19. Thermal Response DESIGN NOTE: USE OF THERMAL RESPONSE DATA 104 IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 19 by the steady state value RqJA. 103 102 ICEO 101 Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. Figure 19A. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C dc 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 10 ms 1.0 s dc TJ = 150C 4.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TA = 25C 20 6.0 100 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 20. http://onsemi.com 6 BCW72LT1G, SBCW72LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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