HARRIS SEMICOND SECTOR bOkE DB MP HS50ee rh UUSUSUcC 4Yb4 BHAS HARRIS 1N5059, 1N5060 reurconoueron 1N5061, 1N5062 December 1993 1A, 200V - 800V Diodes Features Package High-Temperature Metallurgically Bonded, No Com- JEDEC STYLE DO-204 pression Contacts as Found in Diode-Constructed TOP VIEW Rectiflers Glass-Passivated Junction 1A Operation at Ta= 100C with No Thermal Runaway =(_ >= ANODE CATHODE Low Reverse Current Exceeds Environmental Standard of MIL-STD-19500 Hermetically Sealed Package High-Temperature Soldering Guaranteed: 300C/10s/ 0.375 in. (9.5 mm) Lead Length Description The 1N5059, 1N5060, 1N5061, and 1N5062 are glass-pas- sivated transient voltage protected, silicon rectifiers intended for general-purpose applications. Symbol These rectifiers will dissipate up to 800 watts in reverse direction without damage. Voltage transients generated by household or industrial power lines are dissipated. These rectifiers are supplied in a JEDEC style DO-204 pack- Absolute Maximum Ratings Supply Frequency of 60Hz, Resistive or inductive Loads 1N5059 1N5060 1N5061 1N5062 UNITS Maximum Peak (Repetitive) Reverse Voltage (Note 1)............. VaRM 200 400 600 800 Vv Maximum RMS Input (Supply) Voltage For Resistive or Inductive Loads. ...........0. 0.0 e eee eee eens Vams 140 280 420 560 v Maximum DC Reverse (Blocking) Voltage (Note 1)............055 Varoc) 200 400 600 800 Vv Maximum Average Forward Current (Note 1) For Resistive or Inductive Loads, Ty =+75C... 0... ccc eee eee ee eees lo 1 1 1 1 A Maximum Peak Surge (Non Repetitive) Forward Current (Note 1) For 8.3ms Half Sine Wave, Superimposed on Rated Load .......... lesa 50 50 50 50 A Operating Junction and Storage Temperature Range............ Ty Tsta 65104175 -6510+175 -65to+175 65to+175 C NOTE: 1. In accordance with JEDEC registration format. CAUTION: Thase devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 2176.1 Copyright Harris Corporation 1993 48 HARRIS SEMICOND SECTOR BOE D MM 4302271 0050303 350 MHAS Specifications 1N5059, 1N5060, 1N5061, 1N5062 Electrical Specifications _T,, = +25C, Unless Otherwise Specified LIMITS FOR ALL TYPES PARAMETERS SYMBOL MIN TYP MAX UNITS Maximum Instantaneous Forward-Voltage Drop (Note 1) Ve : - 1.2 Vv At 1A, Ty = +75C Maximum Full-Load Reverse Current At Average Full-Cycle, Lead Length = 0.975 in. (9.5mm) | . . 5 pA Ty = 425C At Average Full-Cycle, Lead Length = 0.375 in. (9.5mm) Ip - - 150 pA Ty = +175C (Note 2) Maximum Reverse Current: (Note 1) At Average DC Reverse (Blocking) Voltage, T, = +25C lp : : 5 HA At Maximum DC Reverse (Blocking) Voltage, Ty = +175C Ip : : 300 pA (Nota 3) Maximum Reverse Recovery Time At lp = 0.5A, Ig = 1A, lan = 0.25A lp - - 2 ps Typical Junction Capacitance Gy : 15 - pF n At Frequency = 1MHz and Applied Reverse Voltage = 4V oO A090 NOTES: aa 1. In accordance with JEDEC registration format. uw w 2. 100A for 1N5061 and 1N5062. aI 3. 200HA for 1N5061 and 1N5062. = & Typical Performance Curves = 50 zi _ Wy OT TTT] 5 = Ty = +75C c 0.8 = 40 8.3MS SINGLE HALF = +L & N w < SINE-WAVE oO w t JEDEC METHOD & 2G \ & 0.6 oc 30 z \ Zz N S oc N\ 2 SINGLE-PHASE \ Bo ww 0.4 [ HALF-WAVE, 60Hz aa 2 = RESISTIVE OR ve NA w INDUCTIVE LOAD s9 I] 02 - 0.375" (9.5MM) A a 10 = LEAD LENGTHS g | l l \ meee F 9 0 0 25 50 75 100 1250= 150-175 1 10 400 T,, LEAD TEMPERATURE (C) N, NUMBER OF CYCLES AT 60Hz SINE WAVE FIGURE 1. MAXIMUM AVERAGE FORWARD OUTPUT FIGURE 2. MAXIMUM PEAK SURGE (NON-REPETITIVE) CURRENT CHARACTERISTIC FORWARD CURRENT CHARACTERISTIC HARRIS SEMICOND SECTOR b6E D MM 4302271 0050304 297 MBHAS 1N5059, 1N5060, 1N5061, 1N5062 Typical Performance Curves (Continued) 10 Je 425C z z - eS rn 5 tc ua x & Ty = 475C 3 3 9 w e a : w oO > 2 Fd i : Ty = 425C = Ty = 425C + 1s PULSE DURATION = 300;:8, DUTY FACTOR = 2% 0.01 0.4 0.6 0.8 1.0 12 14 1.6 0 20 40 60 80 100 120 140 Vr, FORWARD VOLTAGE DROP (V) PERCENT OF PEAK REPETITIVE REVERSE VOLTAGE FIGURE 3. TYPICAL INSTANTANEOUS FORWARD CURRENT __ FIGURE 4. TYPICAL REVERSE LEAKAGE CURRENT CHARACTERISTIC CHARACTERISTICS = 1000 30 x Ww 5 rey : g Z 100 < Ww o 2 g Es 3 te c Ms < Ww a 3 a 10 1 10 100 1000 10000 1 10 100 tp, PULSE DURATION (1S) Vp, CATHODE - ANODE VOLTAGE (V) FIGURE 5. MAXIMUM NON-REPETITIVE REVERSE FIGURE 6. TYPICAL JUNCTION CAPACITANCE CHARACTERISTIC AVALANCHE POWER 4-8