NPN High Power Silicon Transistor
Rev. V2
2N6676 & 2N6678
1
1
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1
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/538
TO-3 (TO-204AA) Package
Electrical Characteristics
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
Collector - Emitter Breakdown Voltage IC = 200 mAdc, 2N6676
IC = 200 mAdc, 2N6678 V(BR)CEO Vdc 300
400
Collector - Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676
VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678 ICEX µAdc 1.0
Emitter - Base Cutoff Current VEB = 7 Vdc IEBO mAdc 2.0
Collector - Base Cutoff Current VCB = 450 Vdc, 2N6676
VCB = 650 Vdc, 2N6678 ICBO mAdc 1.0
On Characteristics1
Forward Current Transfer Ratio IC = 1 Adc, VCE = 3 Vdc
IC = 15 Adc, VCE = 3 Vdc HFE - 15
8
40
20
Collector - Emitter Sustaining Voltage IC = 15 Adc, IB = 3 Adc VCE(SAT) Vdc 1.0
Base - Emitter Saturation Voltage IC = 15 Adc, IB = 3 Adc VBE(SAT) Vdc 1.5
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio IC = 1 Adc, VCE = 10 Vdc, f = 5 kHz | HFE | - 3 10
Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF 150 500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
NPN High Power Silicon Transistor
Rev. V2
2N6676 & 2N6678
2
2
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2
Absolute Maximum Ratings
2. Derate linearly @ 34.2 mW / °C for TA >25°C.
Ratings Symbol 2N6676 2N6678 Units
Collector - Emitter Voltage VCEO 300 400 Vdc
Collector - Base Voltage VCBO/VCBX 450 650 Vdc
Emitter - Base Voltage VEBO 8 Vdc
Collector Current IC 15 Adc
Base Current IB 5 Adc
Total Power Dissipation
@ TA = +25°C2
@ TA = +25°C
PT W
6
175
Operating & Storage Temperature Range TOP, TSTG -65 to +200 °C
Thermal Characteristics
Characteristics Symbol Max. Value
Thermal Resistance, Junction to Case RθJC 1°C/W
Electrical Characteristics
Parameter Test Conditions Symbol Units Min. Max.
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Cross-Over Time
See figure 12 of MIL-PRF-19500/538
TD
TR
TS
TF
TC
µs
0.1
0.6
2.5
0.5
0.5
Safe Operating Area
DC Tests: TC = +25°C, I Cycle, t = 1.0 s (see figure 4 of MIL-PRF-19500/537)
Test 1: VCE = 11.7 Vdc, IC = 15 Adc
Test 2: VCE = 30 Vdc, IC = 5.9 Adc
Test 3: VCE = 100 Vdc, IC = 0.25 Adc
Test 4: VCE = 300 Vdc, IC = 20 mAdc, (for 2N6676)
Test 5: VCE = 400 Vdc, IC = 10 mAdc, (for 2N6678)
Clamped Switch:
TA = +25°C, VCC = 15 Vdc
Clamp Voltage = 350; IC = 15 Adc, (2N6676)
Clamp Voltage = 450; IC = 15 Adc, (2N6678)
NPN High Power Silicon Transistor
Rev. V2
2N6676 & 2N6678
3
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
3
Outline Drawing
NPN High Power Silicon Transistor
Rev. V2
2N6676 & 2N6678
4
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
4
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