2N6676 & 2N6678 NPN High Power Silicon Transistor Rev. V2 Features * Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538 * TO-3 (TO-204AA) Package Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc 300 400 -- Collector - Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678 ICEX Adc -- 1.0 Emitter - Base Cutoff Current VEB = 7 Vdc IEBO mAdc -- 2.0 Collector - Base Cutoff Current VCB = 450 Vdc, 2N6676 VCB = 650 Vdc, 2N6678 ICBO mAdc -- 1.0 Forward Current Transfer Ratio IC = 1 Adc, VCE = 3 Vdc IC = 15 Adc, VCE = 3 Vdc HFE - 15 8 40 20 Collector - Emitter Sustaining Voltage IC = 15 Adc, IB = 3 Adc VCE(SAT) Vdc -- 1.0 Base - Emitter Saturation Voltage IC = 15 Adc, IB = 3 Adc VBE(SAT) Vdc -- 1.5 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1 Adc, VCE = 10 Vdc, f = 5 kHz | HFE | - 3 10 Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1 MHz COBO pF 150 500 Off Characteristics On Characteristics1 Dynamic Characteristics 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6676 & 2N6678 NPN High Power Silicon Transistor Rev. V2 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. -- 0.1 0.6 2.5 0.5 0.5 Switching Characteristics Delay Time Rise Time Storage Time Fall Time Cross-Over Time TD TR TS TF TC See figure 12 of MIL-PRF-19500/538 s Safe Operating Area DC Tests: Test 1: Test 2: Test 3: Test 4: Test 5: TC = +25C, I Cycle, t = 1.0 s (see figure 4 of MIL-PRF-19500/537) VCE = 11.7 Vdc, IC = 15 Adc VCE = 30 Vdc, IC = 5.9 Adc VCE = 100 Vdc, IC = 0.25 Adc VCE = 300 Vdc, IC = 20 mAdc, (for 2N6676) VCE = 400 Vdc, IC = 10 mAdc, (for 2N6678) Clamped Switch: TA = +25C, VCC = 15 Vdc Clamp Voltage = 350; IC = 15 Adc, (2N6676) Clamp Voltage = 450; IC = 15 Adc, (2N6678) Absolute Maximum Ratings Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO/VCBX 450 650 Vdc Emitter - Base Voltage VEBO 8 Vdc Collector Current IC 15 Adc Base Current IB 5 Adc Total Power Dissipation @ TA = +25C2 @ TA = +25C PT 6 175 W Operating & Storage Temperature Range TOP, TSTG -65 to +200 C 2. Derate linearly @ 34.2 mW / C for TA >25C. Thermal Characteristics Characteristics Symbol Max. Value Thermal Resistance, Junction to Case RJC 1C/W 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6676 & 2N6678 NPN High Power Silicon Transistor Rev. V2 Outline Drawing 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N6676 & 2N6678 NPN High Power Silicon Transistor Rev. V2 VPT Components All rights reserved. Information in this document is provided in connection with VPT Components' products. 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