SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* 60 Volt VCEO
* 1 Amp cont inuous current
*P
tot= 1 Watt
COMPLEMEN TARY TY PE – FCX591
PARTMARKI N G DETAIL – N1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC1A
Peak Pulse Current ICM 2A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) .
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 80 V IC=100µA
VCEO(sus) 60 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Currents ICBO 100 nA VCB=60V,
ICES 100 nA VCE=60V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Collector-Emitter
Saturation Voltage VCE(sat) 0.25
0.50 V
VIC=500mA, IB=50mA*
IC=1A, IB=100mA*
Base-Emitter
Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio hFE 100
100
80
30
300 IC=1 mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency fT150 MHz IC=5 0mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage Cobo 10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT491 datasheet
FCX491
C
C
B
E
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