CDIL BOw72 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking PACKAGE OUTLINE DETAILS BCW71 = KI ALL DIMENSIONS IN mm BCW72 = K2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 ABSOLUTE MAXIMUM RATINGS BCW71 BCW72 D.C. current gain at Tj = 25 C > 110 200 Ic = 2 mA; Vcg=5V hee < 220 450 Collector-base voltage (open emitter) VcBo max. 50 Vv Collector-emitter voltage (open base) VcEO max. 45 Vv Collector current (peak value) Icom max. 200 mA Total power dissipation up to Tamb = 25 C Ptot max. 250 mW Junction temperature Ty; max. 150 c Transition frequency at f = 35 MHz Ic = 10 mA; Vcz=5V fr typ. 300 MHz Noise figure at Rg = 2 kQ Ic = 200 pA; Vcg = 5 V; f = 1 kHz; B = 200 Hz F < 10 dB 55 CDIL BCW72 BCW72 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Vcpo max. 50V Collector-emitter voltage (open base) Ic=2mA VCEO max. 45 V Emitter-base voltage (open collector) VEBO max. 5 V Collector current (d.c.} Ic max. 100 mA Collector current (peak value) Icm = max. 200 mA Total power dissipation up to Tamb = 25 C Ptot max. 250 mW Storage temperature Tstg -55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient Rthj-a = 500 K/V CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current Ig = 0; Vcp~ 20 V IcBo < 100 nA Tg = 0; Vcp = 20 V; Tj = 100 C Icpo < 10 pA Base emitter voltage Ic =2mA; VcE=5V VBE 550 to 700 mV Saturation voltages Ic = 10 mA; lp = 0,5 mA typ. 120 mV VcEsat < 250 mV VeEsat typ. 750 mV Vv : 210 mV Ic = 50 mA; Ip = 2,5 mA CEsat YP " VeBgEsat typ. 850 mV D.C. current gain BCW71 BCW72 Ic = 10 pA; Vcg=5V hre typ. 90 150 1 2 mA: Vcr =5V h > 110 200 Ce EEN ACES FE < 220 450 Collector capacitance at f = 1 MHz Ip =Ie = 0; Vcp =10V Co typ. 2,5 pF Transition frequency at f = 35 MHz Ic = 10 mA; Vcg =5V fr typ. 300 MHz Noise figure at Rg = 2 kQ Ic = 200 pA; Vcg =5 V f = 1 kHz; B = 200 Hz F < 10 dB 56